FDME905PT [ONSEMI]
P 沟道,PowerTrench® MOSFET,-12V,-8A,22mΩ;型号: | FDME905PT |
厂家: | ONSEMI |
描述: | P 沟道,PowerTrench® MOSFET,-12V,-8A,22mΩ |
文件: | 总7页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel
POWERTRENCH)
V
I
D
MAX
R
MAX
DS(on)
DS
−12 V
−8 A
22 mW
-12 V, -8 A, 22 m
ꢀ
ELECTRICAL CONNECTION
Bottom Drain Contact
FDME905PT
1
2
3
6
5
4
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications. It
features a MOSFET with low on−state resistance.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching and
linear mode applications.
P-Channel MOSFET
G
D
S
Features
D
Pin 1
Max R
Max R
Max R
= 22 mW at V = −4.5 V, I = −8 A
GS D
DS(on)
DS(on)
DS(on)
S
= 26 mW at V = −2.5 V, I = −7.3 A
GS
D
D
D
= 97 mW at V = −1.8 V, I = −3.8 A
GS
D
Top View
Bottom View
Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
Free from Halogenated Compounds and Antimony Oxides
These Devices are Pb−Free and are RoHS Compliant
MicroFET
(UDFN6)
CASE 517DV
MARKING DIAGRAM
MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
−12
Unit
V
&Z&2&K
E95
V
DS
V
GS
8
V
I
D
A
Continuous (T = 25C) (Note 1a)
−8
−30
A
&Z
&2
= Assembly Plant Code
= 2−Digit Date Code (YW)
Pulsed
&K
E95
= 2−Digit Lot Traceability Code
= Specific Device Code
P
D
Power Dissipation
W
2.1
0.7
(T = 25C) (Note 1a)
A
(T = 25C) (Note 1b)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
C
J
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
April, 2023 − Rev. 4
FDME905PT/D
FDME905PT
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
4.5
Unit
R
q
JC
R
q
JA
R
q
JA
Thermal Resistance, Junction to Case
_C/W
_C/W
_C/W
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
60
175
1. Repetitive rating: pulse−width limited by maximum junction temperature.
a) 60 C/W when mounted on
a 1 in pad of 2 oz copper
b). 175 C/W when mounted on
a minimum pad of 2 oz copper
2
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
E95
FDME905PT
MicroFET 1.6x1.6 Thin
(Pb−Free / Halide Free)
7
8 mm
5,000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−12
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25C
−
−8.7
mV/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
V
= −9.6 V, V = 0 V
−
−
−
−
−1
mA
DSS
DS
GS
I
Gate to Source Leakage Current,
Forward
= 8 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−0.4
−0.7
−1.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25C
−
2.5
−
mV/_C
GS(th)
J
D
R
Drain to Source On Resistance
V
GS
V
GS
V
GS
V
GS
= −4.5 V, I = −8 A
−
−
−
−
18
22
28
23
22
26
97
32
mW
DS(on)
D
= −2.5 V, I = −7.3 A
D
= −1.8 V, I = −3.8 A,
D
= −4.5 V, I = −8 A, T = 125C
D
J
g
FS
Forward Transconductance
V
DS
= −5 V, I = −8 A
−
38
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −6 V, V = 0 V,
−
−
−
1740
350
311
2315
525
pF
pF
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
465
rss
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2
FDME905PT
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
t
t
Turn-On Delay Time
Rise Time
V
V
= −6 V, I = −8 A,
−
−
−
−
−
−
−
9.5
8
19
16
144
67
20
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
Turn-Off Delay Time
Fall Time
90
42
14
2.4
3
ns
d(off)
t
f
ns
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
GS
= −6 V, I = −8 A
nC
nC
nC
g
D
= −4.5 V
Q
gs
gd
Q
−
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −8 A (Note 2)
−
−
−
−
−0.8
−0.7
17
−1.2
−1.2
31
V
V
SD
GS
S
= 0 V, I = −1.8 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −8 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
4.5
10
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDME905PT
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
30
20
10
0
3
2
1
V
= −4.5 V
GS
V
= −3 V
GS
VGS = −1.8 V
V
= −2.5 V
GS
V
GS = −2.5 V
V
= −1.8 V
GS
VGS = −3 V
ꢁs
-4.5 V
VGS
=
ꢁ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0
0.00
0.5
1.0
1.5
0
10
20
30
, DRAIN TO SOURCE VOLTAGE (V)
−VDS
, DRAIN CURRENT (A)
−ID
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
1.4
1.3
1.2
1.1
1.0
0.9
0.8
80
ꢁ
s
PULSE DURATION = 80
ID = −8 A
DUTY CYCLE = 0.5% MAX
VGS = −4.5 V
60
40
20
0
ID = −8 A
TJ = 125 o
C
TJ = 25oC
1.0
1.5
−VGS
2.0
2.5
3.0
3.5
4.0
4.5
−75 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (o
, GATE TO SOURCE VOLTAGE (V)
C)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
50
30
VGS = 0 V
ꢁ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
10
VDS = −5 V
TJ = 150 o
C
20
10
0
1
0.1
T
J = 25 o
C
TJ = 150 oC
TJ = 25 o
C
0.01
TJ = −55oC
TJ = −55oC
0.001
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−VGS, GATE TO SOURCE VOLTAGE (V)
−VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDME905PT
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
4.5
3.0
1.5
0.0
3000
1000
ID = −8 A
Ciss
V
DD = −5 V
VDD = −6 V
Coss
VDD = −7 V
Crss
f = 1 MHz
VGS = 0 V
100
0
4
8
12
16
0.1
1
10
20
Qg, GATE CHARGE (nC)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
300
SINGLE PULSE
R
= 175 5C/W
100
ꢂJA
100 ms
TA = 25 o
C
1 ms
1
10 ms
THIS AREA IS
100 ms
1 s
10 s
10
LIMITED BY r
DS(on)
SINGLE PULSE
0.1
DC
T
J
= MAX RATED
0.01
R
ꢂ
JA
= 175 5C/W
o
1
T
= 25 C
A
0.001
0.5
10−4
10−3
10−2
10−1
, PULSE WIDTH (s)
1
10
0.1
1
10
30
100 1000
t
−VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
= 175 5C/W
1
2
R
PEAK T = P
J
x Z
x R
+ T
A
JA
ꢂ
JA
DM
ꢂ
JA
ꢂ
0.001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
11
0
100
1000
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its
affiliates and/or subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517DV
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13700G
UDFN6 1.6x1.6, 0.5P
PAGE 1 OF 1
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