FDMD86100 [ONSEMI]
双 N 沟道栅极屏蔽 PowerTrench® MOSFET;
| 型号： | FDMD86100 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道栅极屏蔽 PowerTrench® MOSFET 栅 开关 脉冲 光电二极管 晶体管 栅极 |
| 文件： | 总7页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
Shielded Gate,
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
100 V
10.5 mW @ 10 V
17.3 mW @ 6 V
39 A
100 V, 39 A, 10.5 mW
G1
D1
D1
FDMD86100
General Description
Pin 1
Pin 1
D1
S1 / S2
This package integrates two N−Channel devices connected
internally in common−source configuration and incorporates Shielded
Gate technology. This enables very low package parasitics and
optimized thermal path to the common source pad on the bottom.
Provides a very small footprint (5 x 6 mm) for higher power density.
D2
D2
D2
G2
Top
Bottom
PQFN8 5X6, 1.27P
(Power 5 x 6)
Features
CASE 483AS
• Common Source Configuration to Eliminate PCB Routing
• Large Source Pad on Bottom of Package for Enhanced Thermals
• Shielded Gate MOSFET Technology
• Max r
• Max r
= 10.5 mW at V = 10 V, I = 10 A
GS D
MARKING DIAGRAM
DS(on)
= 17.3 mW at V = 6 V, I = 7.8 A
DS(on)
GS
D
ZXYYKK
FDMD
86100
• Ideal for Flexible Layout in Secondary Side Synchronous Rectification
• 100% UIL tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
ZZ
X
= Assembly Site Code
= Year Code
Applications
YY
KK
= Weekly Code
= Lot Code
• Isolated DC−DC Synchronous Rectifiers
• Common Ground Load Switches
FDMD86100 = Device Code
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Ratings
100
Unit
V
PIN ASSIGNMENT
V
DS
V
GS
Gate to Source Voltage
Drain Current
20
V
G1
D1
D1
D1
1
2
3
8
7
6
5
D2
D2
D2
G2
I
D
A
− Continuous T = 25°C (Note 5)
39
24
10
C
− Continuous T = 100°C (Note 5)
C
− Continuous T = 25°C (Note 1a)
A
− Pulsed (Note 4)
299
E
AS
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
337
mJ
W
4
S1, S2 to backside
P
D
T
= 25°C
33
2.2
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Ratings
3.7
Unit
R
Thermal Resistance, Junction to Case
°C/W
q
JC
R
Thermal Resistance, Junction to Ambient
(Note 1a)
55
q
JA
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2023 − Rev. 2
FDMD86100/D
FDMD86100
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
7
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
−
3.0
4.0
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−10
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 10 A
−
−
−
−
7.8
12
10.5
17.3
19.5
−
mW
DS(on)
D
= 6 V, I = 7.8 A
D
= 10 V, I = 10 A, T = 125°C
14.5
26
D
J
g
FS
Forward Transconductance
= 5 V, I = 10 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
1469
321
12
2060
450
20
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
−
R
0.1
1.3
3.3
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= 50 V, I = 10 A, V = 10 V,
−
−
−
−
−
−
−
−
13
4.3
18
23
10
32
10
30
18
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
4.1
21
ns
Q
g(TOT)
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 50 V, I = 10 A
nC
nC
nC
nC
DD
D
= 0 V to 6 V, V = 50 V, I = 10 A
13
DD
D
Q
Q
= 50 V, I = 10 A
6.6
4.1
gs
D
−
gd
DRAIN−SOURCE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 10 A (Note 2)
−
−
−
−
0.8
0.7
46
1.3
1.2
74
V
SD
GS
S
= 0 V, I = 2 A (Note 2)
GS
S
t
Reverse Recovery Time
ns
I = 10 A, di/dt = 100 A/ms
F
rr
Q
Reverse Recovery Charge
46
74
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a. 55°C/W when mounted on
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 337 mJ is based on starting T = 25°C, L = 3 mH, I = 15 A, V = 100 V, V = 10 V. 100% tested at L = 0.1 mH, I = 47 A.
AS
J
AS
DD
GS
AS
4. Pulse Id refers to Figure 11 SOA graph for for details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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2
FDMD86100
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
150
120
90
60
30
0
4
V
GS
= 10 V
V
= 5.5 V
GS
V
= 6 V
GS
V
= 7 V
GS
3
2
1
0
V
GS
= 6.5 V
V
= 6.5 V
GS
V
GS
= 7 V
V
GS
= 6 V
V
= 10 V
GS
V
= 5.5 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
30
60
90
120
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
80
60
40
20
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
V
= 10 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
I
D
= 10 A
T = 125°C
J
T = 25°C
J
4
5
6
7
8
9
10
−75 −50 −25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
200
100
150
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
120
90
60
30
0
V
DS
= 5 V
10
T = 150°C
J
1
T = 25°C
J
0.1
T = 150°C
J
T = 25°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
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3
FDMD86100
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
5000
10
8
I
D
= 10 A
C
iss
V
DD
= 25 V
1000
100
10
C
oss
V
= 50 V
DD
6
V
DD
= 75 V
C
4
rss
2
f = 1 MHz
= 0 V
V
GS
1
0.1
0
0
6
12
18
24
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
1
40
R
= 3.7°C/W
q
JC
32
24
16
8
V
= 10 V
GS
T = 25°C
J
T = 100°C
J
V
GS
= 6 V
T = 125°C
J
0
25
0.001
0.01
t
0.1
1
10
100
50
75
100
125
150
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
AV
C
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
500
20000
SINGLE PULSE
10000
R
T
= 3.7°C/W
q
JC
100
= 25°C
C
10 ms
1000
100
10
10
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
T = MAX RATED
1
1 ms
J
R
T
= 3.7°C/W
= 25°C
CURVE BENT TO
MEASURED DATA
10 ms
DC
q
JC
C
0.1
0.1
1
10
100
300
10−5 10−4 10−3 10−2 10−1
t, PULSE WIDTH (s)
1
10
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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4
FDMD86100
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
q
(t) = r(t) x R
q
JC
JC
R
= 3.7°C/W
q
JC
SINGLE PULSE
10−4
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
J
DM
1
2
0.001
10−5
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMD86100
FDMD86100
PQFN8 5X6, 1.27P
(Power 5 x 6)
13”
12 mm
3000 / Tape & Reel
(Pb−Free, Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AS
ISSUE A
DATE 17 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13667G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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