FDMD8900 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDMD8900 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V |
| 文件： | 总12页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET, N-Channel,
POWERTRENCH)
Q1: 30 V, 66 A, 4 mW
Q2: 30 V, 42 A, 5.5 mW
FDMD8900
www.onsemi.com
General Description
This devices utilizes two optimized N−ch FETs in a dual 3.3 x 5 mm
thermally enhanced power package. The HS Source and LS drain are
internally connected providing a low source inductance package,
helping to provide the best FOM.
1
2
3
4
5
6
12
D1
D1
D1
G2
S2
S2
G1
11
10
9
G1R
D2/S1
D2/S1
Features
Q1: N−Channel
8
D2/S1
D2/S1
• Max r
• Max r
• Max r
• Max r
= 4 mW at V = 10 V, I = 19 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
7
= 5 mW at V = 4.5 V, I = 17 A
GS
D
= 6.5 mW at V = 3.8 V, I = 15 A
GS
D
= 8.3 mW at V = 3.5 V, I = 14 A
GS
D
Q2: N−Channel
• Max r
= 5.5 mW at V = 10 V, I = 17 A
GS D
DS(on)
• Max r
= 6.5 mW at V = 4.5 V, I = 15 A
GS D
DS(on)
• Max r
= 9 mW at V = 3.8 V, I = 13 A
GS D
DS(on)
• Max r
= 12 mW at V = 3.5 V, I = 12 A
GS D
DS(on)
Power 3.3 x 5
• Ideal for Flexible Layout in Primary Side of Bridge Topology
• 100% UIL Tested
• Kelvin High Side MOSFET Drive Pin−out Capability
• This Device is Pb−Free and is RoHS Compliant
PQFN12 3.3X5, 0.65P
CASE 483BN
MARKING DIAGRAM
Applications
• Computing
• Buck, Boost and Buck/Boost Applications
• General Purpose POL
$Y&Z&3&K
8900
$Y
&Z
&3
&K
8900
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
August, 2019 − Rev. 2
FDMD8900/D
FDMD8900
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
A
Symbol
VDS
Parameter
Q1
30
12
66
42
19
Q2
30
12
42
26
17
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
A
VGS
ID
Drain Current
−Continuous
TC = 25°C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
−Continuous
−Continuous
−Pulsed
TC = 100°C
TA = 25°C
280
73
210
54
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
mJ
W
TC = 25°C
TA = 25°C
27
15
Power Dissipation
(Note 1a)
2.1
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
Ratings
Unit
4.7
8.4
°C/W
RθJA
(Note 1a)
60
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
PQFN12 3.3x5, 0.65P (Pb−Free)
Shipping
8900
FDMD8900
3000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
2
FDMD8900
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= 250 mA, V = 0 V
Q1
Q2
30
30
V
mV/°C
mA
DSS
D
D
GS
= 250 mA, V = 0 V
GS
DBV
DT
Breakdown Voltage
Temperature Coefficient
I
D
I
D
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
Q1
Q2
14
13
DSS
J
I
Zero Gate Voltage Drain
Current
V
V
= 24 V, V = 0 V
Q1
Q2
1
1
DSS
GSS
DS
DS
GS
= 24 V, V = 0 V
GS
I
Gate to Source Leakage
Current
V
V
=
=
12 V, V = 0 V
Q1
Q2
100
100
nA
GS
GS
DS
12 V, V = 0 V
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold
Voltage
V
GS
V
GS
= V , I = 250 mA
Q1
Q2
0.8
1
1.3
1.4
2.5
2.5
V
DS
D
= V , I = 250 mA
DS
D
DV
DT
Gate to Source Threshold
Voltage Temperature
Coefficient
I
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
Q1
Q2
−4
−4
mV/°C
GS(th)
D
I
D
J
r
Drain to Source On Resistance
V
V
V
V
V
= 10 V, I = 19 A
Q1
Q2
3.4
4
4.3
4.6
4.6
4
5
6.5
8.3
6
mW
DS(on)
GS
GS
GS
GS
GS
D
= 4.5 V, I = 17 A
D
= 3.8 V, I = 15 A
D
= 3.5 V, I = 14 A
D
= 10 V, I = 19 A, T = 125°C
D
J
V
GS
V
GS
V
GS
V
GS
V
GS
= 10 V, I = 17 A
4.5
5.4
6
6.6
5.8
5.5
6.5
9
12
6.9
D
= 4.5 V, I = 15 A
D
= 3.8 V, I = 13 A
D
= 3.5 V, I = 12 A
D
= 10 V, I = 17 A , T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
V
DS
= 5 V, I = 19 A
Q1
Q2
86
80
S
D
= 5 V, I = 17 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
Q1
Q2
1735
1210
2605
1815
pF
pF
pF
W
iss
V
DS
= 15 V, V = 0 V, f = 1 MHz
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
462
356
695
535
oss
Q2:
V
DS
= 15 V, V = 0 V, f = 1 MHz
GS
C
Q1
Q2
47
52
75
80
rss
R
Q1
Q2
0.8
1.9
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1:
Q1
Q2
8.7
7.1
17
14
ns
ns
d(on)
V
DD
= 15 V, I = 19 A, R
= 6 W
= 6 W
D
GEN
t
r
Rise Time
Q1
Q2
2.3
2
10
10
Q2:
V
DD
= 15 V, I = 17 A, R
D
GEN
t
Turn−Off Delay Time
Fall Time
Q1
Q2
25
22
40
35
ns
d(off)
t
f
Q1
Q2
2.4
2.3
10
10
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V
= 0 V to 4.5 V
Q1:
Q1
Q2
25
19
35
27
nC
nC
nC
nC
g
g
GS
V
DD
= 15 V, I = 19 A
D
Q1
Q2
12
8.8
17
12
GS
Q2:
V
DD
= 15 V, I = 17 A
D
Q
Q1
Q2
3.6
2.7
gs
Q
Q1
Q2
2.7
2.6
gd
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3
FDMD8900
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
DRAIN−SOURCE DIODE CHARACTERISTICS T = 25°C unless otherwise noted.
J
V
Source to Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 19 A
(Note 2)
(Note 2)
Q1
Q2
0.8
0.8
1.2
1.2
V
SD
S
= 0 V, I = 17 A
S
t
Reverse Recovery Time
Q1:
Q1
Q2
26
22
42
35
ns
nC
rr
I = 19 A, Di/Dt = 100 A/ms
F
Q
Reverse Recovery Charge
Q1
Q2
10
7.8
20
16
Q2:
rr
I = 17 A, Di/Dt = 100 A/ms
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
θ
θ
JA
by design while R
is determined by the user’s board design.
θ
CA
b. 130 °C/W when mounted on
a minimum pad of 2 oz copper
a. 60 °C/W when mounted on
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
°
°
3. Q1: E of 73 mJ is based on starting T = 25 C, L = 3 mH, I = 7 A, V = 30 V, V = 10 V. 100% tested at L = 0.1 mH, I = 25 A.
AS
J
AS
DD
GS
AS
Q2: E of 54 mJ is based on starting T = 25 C, L = 3 mH, I = 6 A, V = 30 V, V = 10 V. 100% tested at L = 0.1 mH, I = 20 A.
AS
J
AS
DD
GS
AS
4. Pulse Id refers to Figure “Forward Bias Safe Operation Area”.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
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4
FDMD8900
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) T = 25°C unless otherwise noted.
J
80
60
40
20
0
3
2
1
0
V
GS = 10 V
VGS = 4.5 V
VGS = 3.8 V
VGS = 3 V
V
GS = 4.5 V
VGS = 3.8 V
VGS = 3.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0.0
0.2
0.4
0.6
0.8
0
20
40
I , Drain Current (A)
60
80
V
DS
, Drain to Source Voltage (V)
D
Figure 1. On-Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
5
ID = 19 A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
ID = 19 A
TJ = 125 o
C
TJ = 25 o
C
0
2
4
6
8
10
−75 −50 −25
0
25 50 75 100 125 150
T , Junction Temperature (5C)
J
V
GB
, Gate to Source Voltage (V)
Figure 3. Normalized On Resistance vs. Junction
Temperature
Figure 4. On Resistance vs. Gate to
Source Voltage
100
10
80
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
60
TJ = 150oC
1
TJ = 150 o
C
40
20
0
TJ = 25oC
0.1
TJ = 25oC
TJ = −55oC
0.01
T
J = −55 o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
V , Gate to Source Voltage (V)
GS
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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5
FDMD8900
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) T = 25°C unless otherwise noted.
J
10
8
10000
1000
100
ID = 19 A
VDD = 10 V
Ciss
VDD = 15 V
VDD = 20 V
Coss
6
4
Crss
2
f = 1 MHz
GS = 0 V
V
0
10
0.1
0
5
10
15
20
25
30
1
10
30
Qg, Gate Charge (nC)
V , Drain to Source Voltage (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
1
80
R
qJC = 4.7oC/W
60
40
20
0
VGS = 10 V
TJ = 25oC
VGS = 4.5 V
TJ = 100oC
TJ = 125oC
25
50
75
100
125
150
0.001
0.01
t
0.1
1
10
100
, Time in Avalanche (ms)
Tc , Case Temperature (5C)
AV
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
1000
10000
SINGLE PULSE
qJC = 4.7oC/W
R
T
C = 25 oC
100
10 ms
1000
100
10
10
THIS AREA IS
100 ms
LIMITED BY rDS(on)
SINGLE PULSE
1 ms
10 ms
100 ms/DC
1
TJ = MAX RATED
qJC = 4.7oC/W
R
CURVE BENT TO
MEASURED DATA
T
C = 25oC
0.1
0.1
10−5
10−4
10−3
t, Pulse Width (sec)
10−2
10−1
1
1
10
100 200
V , Drain to Source Voltage (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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6
FDMD8900
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) T = 25°C unless otherwise noted.
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.05
0.1
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
SINGLE PULSE
0.01
Z
qJC
qJC
o
R
= 4.7 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, Rectangular Pulse Duration (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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7
FDMD8900
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) T = 25°C unless otherwise noted.
J
60
45
30
15
0
4
3
2
1
0
V
GS = 10 V
GS = 4.5 V
VGS = 3.8 V
V
VGS = 3 V
VGS = 3.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3.8 V
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0.0
0.2
0.4
0.6
0.8
0
15
30
I , Drain Current (A)
45
60
V , Drain to Source Voltage (V)
DS
D
Figure 14. On-Region Characteristics
Figure 15. Normalized On−Resistance
vs. Drain Current and Gate Voltage
30
20
10
0
1.6
= 17 A
ID
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
= 10 V
VGS
1.4
1.2
1.0
0.8
0.6
ID = 17 A
TJ = 150oC
TJ = 25 oC
2
4
6
8
10
−75 −50 −25
0
25 50 75 100 125 150
T , Junction Temperature (5C)
J
V , Gate to Source Voltage (V)
GS
Figure 16. Normalized On−Resistance
vs. Junction Temperature
Figure 17. On Resistance
vs. Gate to Source Voltage
100
10
60
40
20
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
TJ = 150 o
C
1
TJ = 150 o
C
TJ = 25 o
C
T
J = 25oC
0.1
0.01
TJ = −55 o
C
TJ = −55 o
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
V , Gate to Source Voltage (V)
GS
V
SD
, Body Diode Forward Voltage (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward Voltage
vs. Source Current
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8
FDMD8900
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) T = 25°C unless otherwise noted.
J
10000
1000
100
10
8
ID = 17 A
Ciss
Coss
Crss
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
f = 1 MHz
GS = 0 V
2
V
10
0.1
0
1
10
, Drain to Source Voltage (A)
DS
30
0
5
10
15
20
Q , Gate Charge (nC)
V
g
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source
Voltage
60
40
20
0
100
10
1
R
qJC = 8.4 oC/W
V
GS = 10 V
TJ = 25oC
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t
AV
Time in Avalanche (ms)
T , Case Temperature (5C)
C
Figure 22. Unclamped Inductive Switching Capability
Figure 23. Maximum Continuous Drain Current
vs. Case Temperature
500
2000
SINGLE PULSE
oC/W
TC = 25oC
1000
R
qJC = 8.4
100
10 ms
10
THIS AREA IS
100 ms
100
LIMITED BY rDS(on)
SINGLE PULSE
1 ms
1
TJ = MAX RATED
10 ms
DC
qJC = 8.4oC/W
= 25oC
R
CURVE BENT TO
MEASURED DATA
TC
0.1
0.1
10
10−5 10−4 10−3 10−2 10−1
t, Pulse Width (sec)
1
10
1
10
100
100 1000
V
DS
, Drain to Source Voltage (V)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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9
FDMD8900
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) T = 25°C unless otherwise noted.
J
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.05
0.02
t
0.01
1
t
SINGLE PULSE
2
0.01
0.001
(t) = r(t) x RqJC
Z
R
qJC
o
= 8.4 C/W
qJC
Peak T = P
x Z
(t) + T
C
J
DM
qJC
Duty Cycle, D = t / t
1
2
10−5
10−4
10−3
10−2
10−1
1
10
t, Rectangular Pulse Duration (sec)
Figure 26. Junction −to−Case Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN12 3.3X5, 0.65P
CASE 483BN
ISSUE A
DATE 26 AUG 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13670G
PQFN12 3.3X5, 0.65P
PAGE 1 OF 1
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相关型号：
FDME1023PZT
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, THIN, MICROFET-6
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FDME1034CZT
Complementary PowerTrench® MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ
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