FDMD8430 [ONSEMI]
Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ;
| 型号： | FDMD8430 |
| 厂家： | 
ONSEMI |
| 描述： | Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ |
| 文件： | 总8页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMD8430
Dual N-Channel
PowerTrench) MOSFET
30 V, 28 A, 2.12 mW
General Description
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Top
This package integrates two N−Channel devices connected
internally in common−source configuration. This enables very low
package parasitics and optimized thermal path to the common source
pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for
higher power density.
Features
• Max r
• Max r
= 2.12 mW at V = 10 V, I = 28 A
GS D
DS(on)
DS(on)
= 2.95 mW at V = 4.5 V, I = 24 A
GS
D
• Ideal for Flexible Layout in Secondary Side Synchronous
Pin 1
Rectification
• 100% UIL Tested
Bottom
• Termination is Lead−free and RoHS Compliant
D2
D2
D2
G2
Pin 1
Applications
• Isolated DC−DC Synchronous Rectifiers
• Common Ground Load Switches
S1/S2
G1
D1
D1
D1
PQFN8
PowerTrench
CASE 483AU
1
2
3
4
G1
D1
D1
D1
8
7
6
5
D2
D2
D2
G2
S1,S2 to backside
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2018 − Rev. 0
FDMD8430/D
FDMD8430
Table 1. MOSFET MAXIMUM RATINGS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Rating
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current −Continuous
Drain Current − Continuous
Drain Current − Continuous
Drain Current − Pulsed
Single Pulse Avalanche Energy
Power Dissipation
30
V
V
A
DS
GS
20
I
95
T
= 25°C (Note 1)
D
C
T
C
= 100°C (Note 1)
60
T = 25°C (Figure 1)
A
28
(Note 2)
(Note 3)
562
E
96
29
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation
T = 25°C (Figure 1)
A
2.1
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−
mechanical application board design.
2. Pulse Id refers to Figure 13 Forward Bias Safe Operating Area.
3. E of 96 mJ is based on starting T = 25°C; L = 0.3 mH, I = 31.7 A, V = 27 V.
AS
J
AS
DD
b.160 °C/W when mounted on
a minimum pad of 2 oz copper
a. 60 °C/W when mounted on
2
a 1 in pad of 2 oz copper
Figure 1.
Figure 2.
Table 2. THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
4.7
60
°C/W
R
q
JC
JA
R
Thermal Resistance, Junction to Ambient
(Figure 1)
q
2
4. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material, R
is determined
q
q
CA
JA
by the user’s board design.
Table 3. PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDMD8430
FDMD8430
Power 3.3 x 5
13″
12 mm
3000 units
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2
FDMD8430
Table 4. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
17
mV/°C
DSS /
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.6
3.0
V
GS(th)
GS
DS
D
DV
DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−5
mV/°C
GS(th) /
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 28 A
1.5
2.0
1.7
2.12
2.95
2.4
mW
DS(on)
D
= 4.5 V, I = 24 A
D
= 10 V, I = 28 A, T = 125°C
D
J
g
FS
= 5 V, I = 28 A
250
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHZ
3595
1150
112
5035
1610
160
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
2.3
4.5
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
DD
V
GS
= 15 V, I = 28 A,
11
8
20
16
ns
ns
d(on)
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
71
20
52
25
10
7
114
36
ns
d(off)
t
f
ns
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V
= 0 V to 4.5 V
V = 15 V,
DD
D
90
nC
nC
nC
nC
g(tot)
GS
I
= 28 A
45
GS
Q
gs
Q
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 28 A (Note 5)
0.8
40
22
1.2
64
36
V
SD
GS
S
t
I = 28 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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3
FDMD8430
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted.
J
130
105
6
V
GS = 10 V
GS = 6 V
GS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
V
5
4
3
2
1
0
VGS = 3 V
VGS = 4 V
V
GS = 3.5 V
70
35
0
VGS = 3.5 V
VGS = 4 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 3 V
0.5
V
GS = 6 V VGS = 10 V
VGS = 4.5 V
0.0
1.0
1.5
2.0
0
26
52
78
104
130
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On Region Characteristics
Figure 4. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
28
24
20
16
12
8
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 28 A
VGS = 10 V
ID = 28 A
TJ = 125 o
C
4
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Normalized On−Resistance
Figure 6. On−Resistance vs. Gate to
vs. Junction Temperature
Source Voltage
130
100
130
104
78
52
26
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
T
J = 25 o
C
0.1
TJ = 25 o
C
TJ = −55 o
C
0.01
0.001
TJ = −55 oC
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Source to Drain Diode
Forward Voltage vs. Source Current
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4
FDMD8430
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted.
J
10
8
10000
Ciss
ID = 28 A
VDD = 10 V
1000
100
10
Coss
6
V
DD = 15 V
4
VDD = 20 V
Crss
2
f = 1 MHz
GS = 0 V
V
0
0
12
24
36
48
60
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 9. Gate Charge Characteristics
Figure 10. Capacitance vs. Drain to Source
Voltage
100
100
80
60
40
20
0
VGS = 10 V
TJ = 25 o
C
VGS = 4.5 V
10
TJ = 100 o
C
TJ = 125 o
C
R
qJC = 4.7 oC/W
1
0.001 0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE ( oC)
tAV, TIME IN AVALANCHE (ms)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Maximum Continuous Drain
Current vs. Case Temperature
1000
10000
1000
100
SINGLE PULSE
qJC = 4.7oC/W
R
10 ms
T
C = 25oC
100
10
100 ms
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
1
10 ms
100 ms
R
qJC = 4.7oC/W
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
0.1
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 13. Forward Bias Safe Operating
Area
Figure 14. Single Pulse Maximum Power
Dissipation
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5
FDMD8430
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted.
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
R
= 4.7 C/W
qJC
SINGLE PULSE
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 15. Junction−to−Case Transient Thermal Response Curve
PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X5, 0.65P
CASE 483AU
ISSUE A
DATE 06 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13669G
PQFN8 3.3X5, 0.65P
PAGE 1 OF 1
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