FDMA7670 [ONSEMI]
30V单N沟道PowerTrench® MOSFET;
| 型号： | FDMA7670 |
| 厂家： | 
ONSEMI |
| 描述： | 30V单N沟道PowerTrench® MOSFET 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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May 2014
FDMA7670
Single N-Channel PowerTrench® MOSFET
30 V, 11 A, 15 mΩ
Features
General Description
Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 11 A
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Max rDS(on) = 22 mΩ at VGS = 4.5 V, ID = 9 A
Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
Free from halogenated compounds and antimony oxides
RoHS compliant
Application
DC – DC Buck Converters
Pin 1
G
D
D
Bottom Drain Contact
D
D
S
D
D
Drain
Source
G
D
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
30
V
V
±20
TA = 25 °C
(Note 1a)
11
24
ID
A
Power Dissipation
Power Dissipation
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
2.4
PD
W
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
6.9
52
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
°C/W
145
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
12 mm
Quantity
670
FDMA7670
MicroFET 2x2
3000 units
1
©2012 Fairchild Semiconductor Corporation
FDMA7670 Rev.C7
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
15
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
1
μA
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
2.0
–6
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 11 A
mV/°C
V
10
14
14
36
15
22
21
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 9 A
mΩ
VGS = 10 V, ID = 11 A, TJ = 125 °C
VDS = 5 V, ID = 11 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1020
315
35
1360
415
55
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8
3
15
10
34
10
22
10
ns
ns
VDD = 15 V, ID = 11 A
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
19
3
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
16
8
nC
nC
nC
nC
Qg
VDD = 15 V,
D = 11 A
I
Qgs
Qgd
3.0
2.2
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
Reverse Recovery Time
2
A
V
VSD
trr
(Note 2)
0.8
21
6
1.2
33
12
ns
nC
IF = 11 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 52 °C/W when mounted
on a 1 in pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
2
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDMA7670 Rev.C7
Typical Characteristics TJ = 25°C unless otherwise noted
24
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 6 V
20
VGS = 4.5 V
VGS = 4 V
16
12
VGS = 3.5 V
VGS = 4 V
VGS = 4.5 V
8
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 6 V
16
0
0
0.5
1.0
1.5
2.0
0
4
8
12
20
24
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
ID = 11 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
ID = 11 A
TJ = 125 oC
TJ = 25 oC
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
24
24
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
20
16
12
8
VDS = 5 V
TJ = 125 oC
1
0.1
TJ = 125 o
C
TJ = 25 o
C
TJ = 25 o
C
TJ = -55 oC
4
TJ = -55 o
C
0
1.0
0.01
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDMA7670 Rev.C7
Typical Characteristics TJ = 25°C unless otherwise noted
3000
1000
10
ID = 11 A
8
Ciss
VDD = 10 V
6
VDD = 15 V
Coss
100
10
4
VDD = 20 V
2
0
f = 1 MHz
= 0 V
Crss
V
GS
0.1
1
10
30
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 7. Gate Charge Characteristics
50
1000
100
10
SINGLE PULSE
θJA = 145 oC/W
TA = 25 oC
VGS = 10 V
R
10
1
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
0.1
1
R
θJA = 145 oC/W
TA = 25 oC
10 s
DC
DERIVED FROM
TEST DATA
0.01
0.1
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure9. F o r w a r d B i a s S a f e
Operating Area
Figure10. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
RθJA = 145 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Transient Thermal Response Curve
4
www.fairchildsemi.com
©2012 Fairchild Semiconductor Corporation
FDMA7670 Rev.C7
0.05 C
2.0
A
2X
B
2.0
1.70
1.00
(0.20)
No Traces
allowed in
this Area
0.05 C
4
6
PIN#1 IDENT
0.10 C
TOP VIEW
2X
1.05
2.30
ꢀꢁꢂꢃꢀꢁꢀꢃ
ꢀꢁꢄꢀꢀꢁꢀꢃ
0.47(6X)
0.08 C
1
3
SIDE VIEW
C
ꢀꢁꢀꢄꢃꢀꢁꢀꢄꢃ
SEATING
PLANE
0.40(6X)
0.65
RECOMMENDED
LAND PATTERN OPT 1
ꢄꢁꢀꢀꢀꢁꢀꢃ
(0.15)
(0.50)
ꢀꢁꢇꢀꢀꢁꢀꢃ
(0.20)4X
ꢀꢁꢉꢀꢀꢁꢀꢃ
PIN #1 IDENT
1.70
0.45
(0.20)
1
3
1.00
ꢀꢁꢄꢅꢀꢁꢀꢃ
(6X)
ꢀꢁꢃꢆꢀꢁꢀꢃ
ꢈꢁꢀꢀꢀꢁꢀꢃ
4
6
(0.50)
ꢄꢁꢀꢀꢀꢁꢀꢃ
1.05
0.66
2.30
6
4
(6X)
C A B
C
ꢀꢁꢇꢀꢀꢁꢀꢃ
0.47(6X)
0.65
0.10
1
3
1.30
BOTTOM VIEW
0.05
0.40(7X)
RECOMMENDED
LAND PATTERN OPT 2
0.65
NOTES:
A. PACKAGE DOES NOT FULLY CONFORM
TO JEDEC MO-229 REGISTRATION
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
E. DRAWING FILENAME: MKT-MLP06Lrev4.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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