FDMA7672 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，9A，21mΩ;
| 型号： | FDMA7672 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，9A，21mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Pin 1
MOSFET – Single N-Channel,
POWERTRENCH)
D
D
D
G
Drain
Source
30 V, 9.0 A, 21 mW
D
S
Bottom View
FDMA7672
WDFN6 2x2, 0.65P
CASE 511CZ
General Description
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The low
PIN CONNECTIONS
R
DS(on)
and gate charge provide excellent switching performance.
Bottom Drain Contact
Features
• Max R
• Max R
D
D
G
1
2
3
D
D
S
6
5
4
= 21 mW @ V = 10 V, I = 9.0 A
DS(on)
DS(on)
GS
D
= 32 mW @ V = 4.5 V, I = 7 A
GS
D
• Low Profile − 0.8 mm Maximum − in the New Package
MicroFETt 2x2 mm
• This Device is Pb−Free, Halide Free and RoHS Compliant
Top View
Applications
• DC−DC Buck Converters
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Value
30
Unit
V
&Z&2&K
672
V
DSS
V
GSS
Gate to Source Voltage
20
V
I
D
Drain Current
– Continuous (Note 1a)
– Pulsed
A
T = 25°C
A
9
24
&Z = Assembly Plant Code
&2 = 2−Digit Date Code (Year and Week)
&K = 2−Digit Lot Run Code
672 = Specific Device Code
P
Power Dissipation (Note 1a) T = 25°C
2.4
0.9
W
D
A
Power Dissipation (Note 1b) T = 25°C
A
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
D
D
G
S
S
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
6.9
Unit
D
°C/W
R
Thermal Resistance, Junction to Case
q
JC
R
Thermal Resistance, Junction to Ambient
(Note 1a)
52
q
JA
6
D
D
R
Thermal Resistance, Junction to Ambient
(Note 1b)
145
q
JA
Bottom View
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
April, 2023 − Rev. 3
FDMA7672/D
FDMA7672
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA,
Referenced to 25°C
−
16
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
2.1
3.0
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
−6
−
mV/°C
DVGS(th)
DTJ
D
V
V
V
V
= 10 V, I = 9.0 A
−
−
−
−
14
20
19
35
21
32
28
−
R
Static Drain to Source On–Resistance
mW
GS
D
DS(on)
= 4.5 V, I = 7 A
GS
GS
DS
D
= 10 V, I = 9 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 9.0 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
−
−
570
195
25
760
260
40
V
= 15 V, V = 0 V,
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
1.5
−
W
G
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
−
−
−
−
−
6
2
12
10
25
10
13
V
V
= 15 V, I = 9.0 A,
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
14
2
d(off)
t
f
V
= 0 V to 10 V, V = 15 V,
9.3
Q
Total Gate Charge
nC
GS
GS
DD
DD
g
I
D
= 9.0 A
V
= 0 V to 4.5 V, V = 15 V,
−
4.4
6
DD
I
D
= 9.0 A
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
−
−
1.9
1.5
−
−
V
= 15 V, I = 9.0 A
D
gs
Q
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain−Source Diode Forward Current
I
S
2
A
V
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 2.0 A (Note 2)
−
−
−
0.8
18
5
1.2
32
10
SD
GS
S
t
ns
nC
I = 9.0 A, di/dt = 100 A/ms
F
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
JA
a) 52°C/W when mounted
b) 145°C/W when mounted
on a minimum pad of 2 oz copper.
2
on a 1 in pad of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
www.onsemi.com
2
FDMA7672
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
24
20
16
12
8
4.5
V
V
= 10 V
= 6 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
GS
V
= 4 V
GS
V
GS
= 3.5 V
V
= 4.5 V
GS
V
= 4 V
GS
V
GS
= 4.5 V
V
= 3.5 V
GS
4
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 10 V
V
= 6 V
GS
0
0
4
8
12
16
20
24
0.5
1.0
1.5
2.0
0
I , Drain Current (A)
D
V
DS
, Drain to Source Voltage (V)
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
Figure 1. On−Region Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
0
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= 9 A
D
= 10 V
GS
I
D
= 9 A
T = 125°C
J
T = 25°C
J
10
2
4
6
8
−75 −50 −25
0
25
50
75 100 125 150
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to
vs. Junction Temperature
Source Voltage
24
10
24
20
16
12
8
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
DS
= 5 V
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
0.1
T = −55°C
J
T = −55°C
J
4
0
1.0
0.01
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.5
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
www.onsemi.com
3
FDMA7672
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
1000
I
D
= 9 A
C
iss
V
DD
= 10 V
6
C
oss
V
DD
= 15 V
100
4
V
DD
= 20 V
2
C
f = 1 MHz
V = 0 V
rss
GS
10
0.1
0
0
4
2
6
8
10
1
10
30
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 9. Gate Charge Characteristics
Figure 10. Capacitance vs. Drain
to Source Voltage
100
10
1000
100
10
Single pulse
= 145°C/W
T = 25°C
A
R
q
JA
0.1 ms
1 ms
1
This Area is
Limited by R
10 ms
DS(on)
100 ms
Single Pulse
0.1
1
1 s
10 s
DC
T = Max Rated
J
q
R
= 145°C/W
JA
T = 25°C
A
0.01
0.1
10
−4
−3
−2
−1
0
1
0.01
0.1
1
10
100
10
10
10
10
10
100 1000
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 7. Forward Bias Safe Operating Area
Figure 8. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
0.1
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Duty Factor: D = t /t
1
2
Single pulse
= 145°C/W
Peak T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
R
q
JA
0.001
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 11. Transient Thermal Response Curve
www.onsemi.com
4
FDMA7672
ORDERING INFORMATION
†
Device
FDMA7672
Device Marking
672
Package Type
Reel Size
Tape Width
Shipping
WDFN6 2x2, 0.65P
(Pb−Free/Halide Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CZ
ISSUE O
DATE 31 JUL 2016
1.70
1.00
0.05
C
2.0
A
(0.20)
No Traces
2X
B
allowed in
this Area
4
6
2.0
1.05
2.30
0.47(6X)
0.05
C
PIN#1 IDENT
TOP VIEW
2X
1
3
0.40(6X)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN OPT 1
0.10
C
0.20 0.05
1.70
0.45
(0.20)
1.00
0.08
C
SIDE VIEW
C
0.025 0.025
4
6
SEATING
PLANE
2.00 0.05
(0.15)
0.90 0.05
PIN #1 IDENT
1.05
0.66
(0.50)
0.30 0.05
2.30
(0.20)4X
0.47(6X)
1
3
0.28 0.05
(6X)
1
3
0.56 0.05
1.00 0.05
0.40(7X)
0.65
RECOMMENDED
LAND PATTERN OPT 2
2.00 0.05
(6X)
(0.50)
NOTES:
6
4
A. PACKAGE DOES NOT FULLY CONFORM
0.30 0.05
0.10
TO JEDEC MO−229 REGISTRATION
0.65
C
C
A
B
B. DIMENSIONS ARE IN MILLIMETERS.
1.30
0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
BOTTOM VIEW
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13614G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDMA8051L
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, 0.80 MM HEIGHT, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, MICROFET-6
FAIRCHILD
FDMA86551L
Small Signal Field-Effect Transistor, 7.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, 0.80 MM HEIGHT, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, MICROFET-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明