FDMA430NZ [ONSEMI]
单 N 沟道，2.5V 指定，PowerTrench® MOSFET，30V，5.0A，40mΩ;
| 型号： | FDMA430NZ |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，2.5V 指定，PowerTrench® MOSFET，30V，5.0A，40mΩ PC 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single, N-Channel,
POWERTRENCH),
2.5 V Specified
V
R
MAX
I MAX
D
DS
DS(on)
30 V
40 mW @ 4.5 V
50 mW @ 2.5 V
5.0 A
30 V, 5.0 A, 40 mW
Pin 1
D
D
G
Source
FDMA430NZ
Drain
General Description
This Single N−Channel MOSFET has been designed using
onsemi’s advanced POWERTRENCH process to optimize
the R
@ V = 2.5 V on special MicroFETt leadframe.
DS(on)
GS
D
D
S
Bottom
Features
WDFN6 2x2, 0.65P
(MicroFET 2x2)
CASE 511CZ
• R
= 40 mW at V = 4.5 V, I = 5.0 A
= 50 mW at V = 2.5 V, I = 4.5 A
GS D
DS(on)
GS
D
• R
DS(on)
• Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
MARKING DIAGRAM
• HBM ESD Protection Level > 2.5 kV Typical (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z&2&K
430
Applications
• Li−lon Battery Pack
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
430 = Specific Device Code
Symbol
Parameter
Drain−Source Voltage
Ratings
30
Unit
V
V
DSS
V
GSS
Gate−Source Voltage
12
V
PIN ASSIGNMENT
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
A
5.0
20
G
D
D
4
5
6
3
2
1
S
D
D
P
Power Dissipation (Steady State)
− (Note 1a)
W
D
2.4
0.9
− (Note 1b)
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Bottom Drain Contact
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
ORDERING INFORMATION
A
Symbol
Parameter
Ratings
Unit
†
Device
Package
Shipping
Thermal Resistance, Junction to Ambient
(Note 1a)
52
°C/W
R
q
JA
FDMA430NZ
WDFN6
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
R
Thermal Resistance, Junction to Ambient
(Note 1b)
145
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2023 − Rev. 3
FDMA430NZ/D
FDMA430NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
25.2
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
mA
DSS
GSS
DS
GS
I
Gate−Body Leakage
=
12 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
0.6
0.81
1.5
V
GS(th)
GS
DS D
Gate Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−3.2
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain−Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= 4.5 V, I = 5.0 A
−
−
−
−
−
−
23.6
23.9
25.4
27.6
37.0
25.6
40
41
43
50
61
−
mW
DS(on)
D
= 4.0 V, I = 5.0 A
D
= 3.1 V, I = 4.5 A
D
= 2.5 V, I = 4.5 A
D
= 4.5 V, I = 5.0 A, T = 150°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 5.0 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V, f = 1.0 MHz
−
−
−
−
600
110
75
800
150
115
−
pF
pF
pF
W
iss
DS
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
f = 1.0 MHz
3.5
G
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= 10 V, I = 1 A,
−
−
−
−
−
−
−
8.3
7.1
18.1
6.0
7.3
0.8
1.9
17
15
37
12
11
2
ns
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
g
V
DS
= 10 V, I = 5.0 A, V = 4.5 V
nC
nC
nC
D
GS
Q
gs
gd
Q
3
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
0.69
−
2.0
1.2
17
5
A
V
V
SD
Drain−Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = 2.0 A
GS S
t
rr
I = 5.0 A, di/dt = 100 A/ms
F
ns
nC
Q
rr
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins.
a. 52°C/W when mounted
b. 145°C/W when mounted
on a minimum pad of 2 oz copper
2
on a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
FDMA430NZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
1.8
1.7
40
30
20
V
GS
= 4.5 V
V
= 2.5 V
GS
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
V
GS
= 2.0 V
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
2.5 V
3.0 V
V
GS
= 3.0 V
3.5 V
V
= 2.0 V
= 1.5 V
GS
4.5 V
35
10
0
V
GS
0
1
2
3
4
5
10
15
20
25
30
40
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance vs. Drain Current
and Gate Voltage
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.6
1.4
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0% MAX
I
V
= 5.0 A
D
= 4.5 V
GS
I
D
= 2.5 A
1.2
1.0
T = 125°C
J
0.8
0.6
T = 25°C
J
5
−80
−40
0
40
80
120
160
1
2
3
4
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
30
100
PULSE DURATION = 300 ms
V
GS
= 0 V
DUTY CYCLE = 2.0% MAX
25
20
15
10
5
10
1
V
DS
= 5 V
T = 125°C
J
T = 25°C
J
0.1
0.01
T = 125°C
J
T = 25°C
J
T = −55°C
J
1E−3
1E−4
T = −55°C
J
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
2.5
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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3
FDMA430NZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
5
4
1000
I
D
= 5.0 A
C
iss
V
= 15 V
DS
3
2
1
0
V
DS
= 10 V
C
oss
100
10
V
DS
= 20 V
C
rss
f = 1 MHz
= 0 V
V
GS
0
2
4
6
8
10
10
, Drain to Source Voltage (V)
DS
30
0.1
1
Q , Gate Charge (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
5
4
3
2
1
0
100
10 ms
V
= 4.5 V
10
1
GS
100 ms
1 ms
V
GS
= 2.5 V
10 ms
OPERATION IN
THIS AREA MAY BE
100 ms
1 s
10 s
DC
LIMITED BY R
DS(on)
0.1
SINGLE PULSE
T = MAX RATED
J
T = 25°C
A
R
= 145°C/W
q
JA
0.01
150
1
25
75
0.1
10
50
50
100
125
V
DS
, Drain to Source Voltage (V)
T , Ambient Temperature (5C)
A
Figure 9. Safe Operating Area
Figure 10. Maximum Continuous Drain
Current vs. Ambient Temperature
200
100
V
GS
= 10 V
T = 25°C
A
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
10
150
* TA
Ǹ
I + I25
ƪ ƫ
SINGLE PULSE
125
1
0.5
−4
−3
−2
−1
0
1
2
3
10
10
10
10
10
10
10
10
t, Pulse Width (s)
Figure 11. Single Pulse Maximum Power Dissipation
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4
FDMA430NZ
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t / t
1
2
SINGLE PULSE
PEAK T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
R
= 145°C/W
q
JA
0.01
−4
−3
−2
−1
0
1
2
3
10
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CZ
ISSUE O
DATE 31 JUL 2016
1.70
1.00
0.05
C
2.0
A
(0.20)
No Traces
2X
B
allowed in
this Area
4
6
2.0
1.05
2.30
0.47(6X)
0.05
C
PIN#1 IDENT
TOP VIEW
2X
1
3
0.40(6X)
0.65
0.75 0.05
RECOMMENDED
LAND PATTERN OPT 1
0.10
C
0.20 0.05
1.70
0.45
(0.20)
1.00
0.08
C
SIDE VIEW
C
0.025 0.025
4
6
SEATING
PLANE
2.00 0.05
(0.15)
0.90 0.05
PIN #1 IDENT
1.05
0.66
(0.50)
0.30 0.05
2.30
(0.20)4X
0.47(6X)
1
3
0.28 0.05
(6X)
1
3
0.56 0.05
1.00 0.05
0.40(7X)
0.65
RECOMMENDED
LAND PATTERN OPT 2
2.00 0.05
(6X)
(0.50)
NOTES:
6
4
A. PACKAGE DOES NOT FULLY CONFORM
0.30 0.05
0.10
TO JEDEC MO−229 REGISTRATION
0.65
C
C
A
B
B. DIMENSIONS ARE IN MILLIMETERS.
1.30
0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
BOTTOM VIEW
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13614G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
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