FDMA520PZ [ONSEMI]
P 沟道,PowerTrench® MOSFET,-20V,-7.3A,30mΩ;型号: | FDMA520PZ |
厂家: | ONSEMI |
描述: | P 沟道,PowerTrench® MOSFET,-20V,-7.3A,30mΩ 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:399K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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June 2014
FDMA520PZ
Single P-Channel PowerTrench® MOSFETꢀ
–20V, –7.3A, 30m:
Features
General Description
Max rDS(on) = 30m: at VGS = –4.5V, ID = –7.3A
Max rDS(on) = 53m: at VGS = –2.5V, ID = –5.5A
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
HBM ESD protection level > 3kV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
Pin 1
G
D
D
Bottom Drain Contact
1
D
D
G
6
5
4
D
D
S
Drain
Source
2
3
D
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
–20
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
12
(Note 1a)
–7.3
ID
A
–24
Power Dissipation
(Note 1a)
(Note 1b)
2.4
PD
W
Power Dissipation
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RTJA
RTJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
52
°C/W
145
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
520
FDMA520PZ
MicroFET 2X2
7’’
3000 units
1
©2009 Fairchild Semiconductor Corporation
FDMA520PZ Rev.B3
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250PA, VGS = 0V
–20
V
'BVDSS
ꢀꢀꢀ'TJ
Breakdown Voltage Temperature
Coefficient
I
D = –250PA, referenced to 25°C
VDS = –16V, VGS = 0V
VGS 12V, VDS = 0V
–8.4
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
–1
10
PA
PA
=
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250PA
–0.6
–1.1
3.5
–1.5
V
ꢀ'VGS(th)
ꢀꢀꢀ'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250PA, referenced to 25°C
mV/°C
V
GS = –4.5V, ID = –7.3A
26
42
36
22
30
53
55
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
VGS = –2.5V, ID = –5.5A
m:
VGS = –4.5V, ID = –7.3A ,TJ = 125°C
VDS = –5V, ID = –7.3A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1235
255
1645
340
pF
pF
pF
VDS = –10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
225
340
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
29
83
74
14
2.9
4.4
20
47
ns
ns
VDD = –10V, ID = –7.3A
VGS = –4.5V, RGEN = 6:
Turn-Off Delay Time
Fall Time
133
119
20
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
VDD = –5V, ID = –7.3A
VGS = –4.5V
Qgs
Qgd
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage VGS = 0V, IS = –2A
Reverse Recovery Time
–2
–1.2
45
A
V
VSD
trr
–0.8
30
ns
nC
IF =–7.3A, di/dt = 100A/Ps
Qrr
Reverse Recovery Charge
22
33
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
TJA
b.145°C/W when mounted on
minimum pad of 2 oz copper
a
a. 52°C/W when mounted on
2
a 1 in pad of 2 oz copper
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
www.fairchildsemi.com
2
FDMA520PZ Rev.B3
Typical Characteristics TJ = 25°C unless otherwise noted
24
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
V
= -4.5V
= -4V
GS
GS
GS
V
= -3.5V
18
12
6
VGS = -2.5V
V
= -2.5V
GS
V
= -3V
GS
VGS = -3V
VGS = -3.5V
VGS = -4.5V
VGS = -4V
0
0
1
2
3
4
0
6
12
18
24
-I , DRAIN CURRENT(A)
D
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
60
ID = -7.3A
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
T = 125oC
J
T
J
= 25oC
I
D
= -3.6A
3
-50 -25
0
25
50
75
100 125 150
2
4
5
6
7
8
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
30
10
24
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
T = 125oC
J
18
1
0.1
V
DD
= -5V
12
6
T
= 25oC
J
0.01
= 25oC
T
= 125oC
J
T
J
J
T
= -55oC
J
0.001
0.0001
T
=-55oC
3
0
0
1
2
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
FDMA520PZ Rev.B3
Typical Characteristics TJ = 25°C unless otherwise noted
10
3000
1000
I
= -7.3A
C
iss
D
V
DD
= -5V
8
6
4
2
0
V
DD
= -10V
C
oss
V
DD
= -15V
C
rss
100
30
f = 1MHz
= 0V
V
GS
0
7
14
21
28
35
0.1
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
60
10
V
GS
= 0V
rDS(on) LIMIT
100us
1ms
T
J
= 125oC
1
0.1
10ms
VGS=4.5V
100ms
1s
SINGLE PULSE
T
J
= 25oC
RTJA=145oC/W
10s
DC
o
TA = 25 C
0.01
0.1
1
10
60
0
3
6
9
12
15
-V , GATE TO SOURCE VOLTAGE(V)
GS
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
Figure 10. Forward Bias Safe
Operating Area
150
2
1
DUTY CYCLE-DESCENDING ORDER
SINGLE PULSE
= 145oC/W
D = 0.5
0.2
R
TJA
T =25oC
120
90
60
30
0
A
0.1
0.05
0.02
P
DM
0.01
0.1
t
1
SINGLE PULSE
NOTES:
t
2
DUTY FACTOR: D = t /t
1
2
0.01
PEAK T = P
J
x Z
x R
+ T
DM
TJA
TJA A
0.005
10-4
10-3
10-2
10-1
100
t, PULSE WIDTH (s)
101
102
103
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure11. Single Pulse Maximum
Power Dissipation
Figure 12. Transient Thermal Response Curve
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4
FDMA520PZ Rev.B3
Dimensional Outline and Pad Layout
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without notice. Please note the revision a
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,
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5
FDMA520PZ Rev.B3
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AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
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CROSSVOLT™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power ResourceSM
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PowerXS™
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QS™
Quiet Series™
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™
®
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®
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®
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®
DEUXPEED
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Marking Small Speakers Sound Louder
and Better™
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MicroPak™
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®
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Saving our world, 1mW/W/kW at a time™
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ESBC™
®
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
®
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SuperSOT™-3
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SupreMOS
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Sync-Lock™
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Fairchild Semiconductor
FACT Quiet Series™
®
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®
®
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
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®
®
仙童 ™
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I68
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FDMA520PZ Rev. B3
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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