FDMA520PZ [ONSEMI]

P 沟道,PowerTrench® MOSFET,-20V,-7.3A,30mΩ;
FDMA520PZ
型号: FDMA520PZ
厂家: ONSEMI    ONSEMI
描述:

P 沟道,PowerTrench® MOSFET,-20V,-7.3A,30mΩ

脉冲 光电二极管 晶体管
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June 2014  
FDMA520PZ  
Single P-Channel PowerTrench® MOSFET  
–20V, –7.3A, 30m:  
Features  
General Description  
„ Max rDS(on) = 30m: at VGS = –4.5V, ID = –7.3A  
„ Max rDS(on) = 53m: at VGS = –2.5V, ID = –5.5A  
This device is designed specifically for battery charge or load  
switching in cellular handset and other ultraportable applications.  
It features a MOSFET with low on-state resistance.  
„ Low profile - 0.8mm maximum - in the new package MicroFET  
2X2 mm  
The MicroFET 2X2 package offers exceptional thermal  
performance for its physical size and is well suited to linear mode  
applications.  
„ HBM ESD protection level > 3kV typical (Note 3)  
„ Free from halogenated compounds and antimony oxides  
„ RoHS Compliant  
Pin 1  
G
D
D
Bottom Drain Contact  
1
D
D
G
6
5
4
D
D
S
Drain  
Source  
2
3
D
D
S
MicroFET 2X2 (Bottom View)  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
–20  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
V
V
12  
(Note 1a)  
–7.3  
ID  
A
–24  
Power Dissipation  
(Note 1a)  
(Note 1b)  
2.4  
PD  
W
Power Dissipation  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
RTJA  
RTJA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
52  
°C/W  
145  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
8mm  
Quantity  
520  
FDMA520PZ  
MicroFET 2X2  
7’’  
3000 units  
1
©2009 Fairchild Semiconductor Corporation  
FDMA520PZ Rev.B3  
www.fairchildsemi.com  
Electrical Characteristics TJ = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
Drain to Source Breakdown Voltage  
ID = –250PA, VGS = 0V  
–20  
V
'BVDSS  
ꢀꢀꢀ'TJ  
Breakdown Voltage Temperature  
Coefficient  
I
D = –250PA, referenced to 25°C  
VDS = –16V, VGS = 0V  
VGS 12V, VDS = 0V  
–8.4  
mV/°C  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
–1  
10  
PA  
PA  
=
On Characteristics  
VGS(th)  
Gate to Source Threshold Voltage  
VGS = VDS, ID = –250PA  
–0.6  
–1.1  
3.5  
–1.5  
V
ꢀ'VGS(th)  
ꢀꢀꢀ'TJ  
Gate to Source Threshold Voltage  
Temperature Coefficient  
ID = –250PA, referenced to 25°C  
mV/°C  
V
GS = –4.5V, ID = –7.3A  
26  
42  
36  
22  
30  
53  
55  
rDS(on)  
Static Drain to Source On Resistance  
Forward Transconductance  
VGS = –2.5V, ID = –5.5A  
m:  
VGS = –4.5V, ID = –7.3A ,TJ = 125°C  
VDS = –5V, ID = –7.3A  
gFS  
S
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
1235  
255  
1645  
340  
pF  
pF  
pF  
VDS = –10V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
225  
340  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
10  
29  
83  
74  
14  
2.9  
4.4  
20  
47  
ns  
ns  
VDD = –10V, ID = –7.3A  
VGS = –4.5V, RGEN = 6:  
Turn-Off Delay Time  
Fall Time  
133  
119  
20  
ns  
ns  
Qg  
Total Gate Charge  
Gate to Source Gate Charge  
Gate to Drain “Miller” Charge  
nC  
nC  
nC  
VDD = –5V, ID = –7.3A  
VGS = –4.5V  
Qgs  
Qgd  
Drain-Source Diode Characteristics  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
Source to Drain Diode Forward Voltage VGS = 0V, IS = –2A  
Reverse Recovery Time  
–2  
–1.2  
45  
A
V
VSD  
trr  
–0.8  
30  
ns  
nC  
IF =–7.3A, di/dt = 100A/Ps  
Qrr  
Reverse Recovery Charge  
22  
33  
Notes:  
1: R  
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.  
TJA  
b.145°C/W when mounted on  
minimum pad of 2 oz copper  
a
a. 52°C/W when mounted on  
2
a 1 in pad of 2 oz copper  
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.  
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.  
www.fairchildsemi.com  
2
FDMA520PZ Rev.B3  
Typical Characteristics TJ = 25°C unless otherwise noted  
24  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
V
V
= -4.5V  
= -4V  
GS  
GS  
GS  
V
= -3.5V  
18  
12  
6
VGS = -2.5V  
V
= -2.5V  
GS  
V
= -3V  
GS  
VGS = -3V  
VGS = -3.5V  
VGS = -4.5V  
VGS = -4V  
0
0
1
2
3
4
0
6
12  
18  
24  
-I , DRAIN CURRENT(A)  
D
-V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
1.6  
60  
ID = -7.3A  
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
VGS = -4.5V  
1.4  
1.2  
1.0  
0.8  
0.6  
50  
40  
30  
20  
10  
T = 125oC  
J
T
J
= 25oC  
I
D
= -3.6A  
3
-50 -25  
0
25  
50  
75  
100 125 150  
2
4
5
6
7
8
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
30  
10  
24  
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
V
GS  
= 0V  
T = 125oC  
J
18  
1
0.1  
V
DD  
= -5V  
12  
6
T
= 25oC  
J
0.01  
= 25oC  
T
= 125oC  
J
T
J
J
T
= -55oC  
J
0.001  
0.0001  
T
=-55oC  
3
0
0
1
2
4
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-V , BODY DIODE FORWARD VOLTAGE (V)  
SD  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
www.fairchildsemi.com  
3
FDMA520PZ Rev.B3  
Typical Characteristics TJ = 25°C unless otherwise noted  
10  
3000  
1000  
I
= -7.3A  
C
iss  
D
V
DD  
= -5V  
8
6
4
2
0
V
DD  
= -10V  
C
oss  
V
DD  
= -15V  
C
rss  
100  
30  
f = 1MHz  
= 0V  
V
GS  
0
7
14  
21  
28  
35  
0.1  
1
10  
20  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
-Q , GATE CHARGE(nC)  
g
Figure 7. Gate Charge Characteristics  
Figure8. C a p a c i t a n c e v s D r a i n  
to Source Voltage  
1E-4  
1E-5  
1E-6  
1E-7  
1E-8  
1E-9  
60  
10  
V
GS  
= 0V  
rDS(on) LIMIT  
100us  
1ms  
T
J
= 125oC  
1
0.1  
10ms  
VGS=4.5V  
100ms  
1s  
SINGLE PULSE  
T
J
= 25oC  
RTJA=145oC/W  
10s  
DC  
o
TA = 25 C  
0.01  
0.1  
1
10  
60  
0
3
6
9
12  
15  
-V , GATE TO SOURCE VOLTAGE(V)  
GS  
VDS, DRAIN to SOURCE VOLTAGE (V)  
Figure 9. Gate Leakage Current vs Gate to  
Source Voltage  
Figure 10. Forward Bias Safe  
Operating Area  
150  
2
1
DUTY CYCLE-DESCENDING ORDER  
SINGLE PULSE  
= 145oC/W  
D = 0.5  
0.2  
R
TJA  
T =25oC  
120  
90  
60  
30  
0
A
0.1  
0.05  
0.02  
P
DM  
0.01  
0.1  
t
1
SINGLE PULSE  
NOTES:  
t
2
DUTY FACTOR: D = t /t  
1
2
0.01  
PEAK T = P  
J
x Z  
x R  
+ T  
DM  
TJA  
TJA A  
0.005  
10-4  
10-3  
10-2  
10-1  
100  
t, PULSE WIDTH (s)  
101  
102  
103  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
103  
t, RECTANGULAR PULSE DURATION (s)  
Figure11. Single Pulse Maximum  
Power Dissipation  
Figure 12. Transient Thermal Response Curve  
www.fairchildsemi.com  
4
FDMA520PZ Rev.B3  
Dimensional Outline and Pad Layout  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision a  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,  
specifically the warranty therein, which covers Fairchild products.  
child Semiconductor representative to ver  
ify or  
nd/or date on the drawing and contact a Fair  
tor’s online packaging area for the most recent package drawings:  
Always visit Fairchild Semiconduc  
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-C06  
www.fairchildsemi.com  
5
FDMA520PZ Rev.B3  
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®*  
®
®
®
tm  
®
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GreenBridge™  
Green FPS™  
PowerTrench  
PowerXS™  
Programmable Active Droop™  
QFET  
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Quiet Series™  
RapidConfigure™  
®
TinyBoost  
TinyBuck  
®
TinyCalc™  
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®
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®
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®
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®
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®
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Rev. I68  
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FDMA520PZ Rev. B3  
6
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
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