FDD3860 [ONSEMI]
N 沟道 PowerTrench® MOSFET，100 V，29 A，36 mΩ;
| 型号： | FDD3860 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET，100 V，29 A，36 mΩ 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：490K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
General Description
Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
This N-Channel MOSFET is rugged gate version of ON
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
High Performance Trench Technology for Extremely Low
rDS(on)
ruggedness for a wide range of switching applications.
100% UIL Tested
RoHS Compliant
Applications
DC-AC Conversion
Synchronous Rectifier
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25°C
TA = 25°C
29
ID
(Note 1a)
(Note 3)
6.2
A
-Pulsed
60
EAS
Single Pulse Avalanche Energy
Power Dissipation
121
mJ
W
TC = 25°C
TA = 25°C
83
PD
Power Dissipation
(Note 1a)
3.75
-55 to +175
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.8
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16 mm
Quantity
FDD3860
FDD3860
D-PAK (TO-252)
2500 units
1
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDD3860/D
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, referenced to 25°C
98
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
2.5
3.8
4.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
-11.4
mV/°C
V
GS = 10V, ID = 5.9A
29
51
20
36
64
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10V, ID = 5.9A, TJ = 125°C
VDS = 10V, ID = 5.9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1310
100
45
1740
130
70
pF
pF
pF
Ω
V
DS = 50V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
f = 1MHz
1.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
16
10
24
7
29
21
39
15
31
ns
ns
VDD = 50V, ID = 5.9A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
22
7.1
6.3
nC
nC
nC
V
DD = 50V, ID = 5.9A
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0V, IS = 2.0A
(Note 2)
(Note 2)
0.7
0.8
34
1.2
1.3
55
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0V, IS = 5.9A
trr
Reverse Recovery Time
ns
IF = 5.9A, di/dt = 100A/μs
Qrr
Reverse Recovery Charge
40
64
nC
Notes:
1: R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
40°C/W when mounted on a
1 in pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 9A, V = 100V, V = 10V.
J
AS
DD
GS
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted.
3.0
2.5
2.0
1.5
1.0
0.5
60
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
V
V
= 10V
= 8V
GS
50
40
30
20
10
0
VGS = 6V
GS
V
= 7V
GS
VGS = 7V
VGS = 8V
VGS = 10V
V
= 6V
GS
0
10
20
30
40
50
60
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
100
80
60
40
20
0
2.2
PULSE DURATION = 80μs
ID = 5.9A
ID = 5.9A
GS = 10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
DUTY CYCLE = 0.5%MAX
V
TJ = 125oC
TJ = 25oC
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
60
PULSE DURATION = 80μs
100
DUTY CYCLE = 0.5%MAX
VGS = 0V
50
VDS = 10V
40
10
TJ = 150oC
1
30
TJ = 150oC
TJ = 25oC
20
0.1
0.01
1E-3
TJ = 25oC
TJ = -55oC
10
TJ = -55oC
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25°C unless otherwise noted.
10
3000
1000
ID = 5.9A
VDD = 25V
Ciss
8
6
4
2
0
VDD = 75V
VDD = 50V
Coss
100
10
Crss
f = 1MHz
= 0V
V
GS
0
5
10
15
20
25
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
10
8
35
28
21
14
7
6
4
VGS = 10V
TJ = 125oC
TJ = 25oC
R
θJC = 1.8oC/W
2
1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
105
100
10
1
VGS = 10V
104
SINGLE PULSE
RθJC = 1.8oC/W
100us
103
1ms
SINGLE PULSE
TJ = MAX RATED
102
THIS AREA IS
LIMITED BY rds(on)
10ms
DC
R
θJC = 1.8oC/W
TC = 25oC
10
0.1
0.1
10-6
10-5
10-4
10-3
10-2
10-1
1
1
10
100
300
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
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4
Typical Characteristics TJ = 25°C unless otherwise noted.
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
FOR
ABO
0.1
0.05
0.1
P
DM
CURR
0.02
0.01
I = I
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJC = 1.8oC/W
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC
C
0.001
10-6
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
0.01
0.001
2
SINGLE PULSE
RθJA = 40oC/W
(Note 1a)
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 14. Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
0.05
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
RθJA = 96oC/W
(Note 1b)
0.001
0.0001
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 15. Transient Thermal Response Curve
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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