ESD8472BMUT5G [ONSEMI]
Rectifier Diode;
| 型号： | ESD8472BMUT5G |
| 厂家： | 
ONSEMI |
| 描述： | Rectifier Diode |
| 文件： | 总5页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD Protection Diode
Ultra−Low Capacitance
Micro−Packaged Diodes for ESD Protection
Product Preview
ESD8472B
The ESD8472B is designed to protect voltage sensitive components
that require ultra-low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
www.onsemi.com
MARKING
DIAGRAM
PIN 1
Features
X3DFN2
CASE 152AF
• Industry Leading Capacitance Linearity Over Voltage
• Ultra−Low Capacitance: 0.2 pF
4 M
• Insertion Loss: 0.030 dBm
4
= Specific Device Code
• 0201DNS Package: 0.60 mm x 0.30 mm
• Stand−off Voltage: 5.3 V
M = Date Code
• Low Leakage: < 1 nA
ORDERING INFORMATION
• Low Dynamic Resistance: < 1 W
†
Device
ESD8472BMUT5G
Package
Shipping
• 1000 ESD IEC61000−4−2 Strikes 8 kV Contact / Air Discharged
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
X3DFN2
(Pb−Free)
10000 / Tape &
Reel
Typical Applications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
• USB 2.0, USB 3.0
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
IEC 61000−4−2 Level 4 (Contact) (Note 1)
IEC 61000−4−2 Level 4 (Air) (Note 1)
ESD
20
20
kV
Maximum Peak Pulse Current
IEC 61000−4−5 8/20 ms (Lightning) (Note 2)
I
PP
3.0
A
Total Power Dissipation (Note 3) @ T = 25°C
°P °
300
400
mW
°C/W
A
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
3. Mounted with recommended minimum pad size, DC board FR−4
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2020 − Rev. P1
ESD8472B/D
ESD8472B
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
I
PP
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
PP
I
T
I
V
R
BR RWM
V
Clamping Voltage @ I
V
C
V
C
PP
V
I
V
V
V
R
T
RWM BR C
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
PP
I
T
Bi−Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Condition
Min
Typ
Max
5.3
12
Unit
V
V
RWM
V
BR
I = 1 mA (Note 4)
T
7.0
V
Reverse Leakage Current
Clamping Voltage
I
V
= 5.3 V
< 1
11
10
nA
V
R
RWM
V
I
PP
I
PP
= 1 A (Note 5)
= 3 A (Note 5)
15
C
C
C
Clamping Voltage
V
V
14
20
V
ESD Clamping Voltage
Junction Capacitance
Per IEC61000−4−2
See Figures 1 and 2
C
V
R
V
R
= 0 V, f = 1 MHz
= 0 V, f = 1 GHz
0.20
0.15
0.30
0.30
pF
J
Dynamic Resistance
Insertion Loss
R
TLP Pulse
1
W
DYN
f = 1 MHz
f = 8.5 GHz
0.050
0.250
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform (Figure 9).
Figure 1. ESD Clamping Voltage Screenshot
Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Negative 8 kV Contact per IEC61000−4−2
www.onsemi.com
2
ESD8472B
TYPICAL CHARACTERISTICS
Figure 3. IV Characteristics
Figure 4. CV Characteristics
Figure 5. RF Insertion Loss
Figure 6. Capacitance over Frequency
20
18
16
14
12
10
8
0
−2
−4
−6
−8
−10
−12
−14
−16
6
4
2
0
−18
−20
0
5
10
15
20
25
30
−30
−25
−20
−15
−10
−5
0
VOLTAGE (V)
VOLTAGE (V)
Figure 7. Positive TLP I−V Curve
Figure 8. Negative TLP I−V Curve
www.onsemi.com
3
ESD8472B
100
90
80
70
60
50
40
30
20
t
r
PEAK VALUE I
@ 8 ms
RSM
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 9. IEC 61000−4−5 8/20 ms Pulse Waveform
www.onsemi.com
4
ESD8472B
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
D
PIN 1
INDICATOR
(OPTIONAL)
MILLIMETERS
DIM MIN
MAX
0.33
0.05
0.28
0.66
0.36
A
A1
b
D
E
0.25
E
−−−
TOP VIEW
0.22
0.58
0.28
e
0.355 BSC
0.23
L2 0.17
0.05
0.05
C
C
A
2X
RECOMMENDED
A1
SIDE VIEW
MOUNTING FOOTPRINT*
SEATING
PLANE
C
2X
0.30
0.74
e
1
2X b
1
2
2X
0.31
M
DIMENSIONS: MILLIMETERS
0.05
C A B
2X L2
M
See Application Note AND8398/D for more mounting details
0.05
C A
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
ESD8472MUT5G
Ultra-Low Capacitance RF ESD Protection Micro.Packaged Diodes for ESD Protection
ONSEMI
©2020 ICPDF网 联系我们和版权申明