BUH150G_技术文档

BUH150G

SWITCHMODEt NPN

Silicon Planar Power

Transistor

The BUH150G has an application specific state−of−art die designed

for use in 150 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large

inrush current during either the startup conditions or under a short

circuit across the load.

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POWER TRANSISTOR

15 AMPERES

700 VOLTS, 150 WATTS

Features

• Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain h

Fast Switching

FE

• Robustness Thanks to the Technology Developed to Manufacture

this Device

• ON Semiconductor Six Sigma Philosophy Provides Tight and

Reproducible Parametric Distributions

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

TO−220AB

CASE 221A−09

STYLE 1

Rating

Symbol

Value

400

Unit

Vdc

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

V

CEO

CBO

V

700

1

2

3

Collector−Emitter Breakdown Voltage

Emitter−Base Voltage

V

700

10

Vdc

Adc

CES

EBO

Collector Current − Continuous

− Peak (Note 1)

I

C

15

25

I

MARKING DIAGRAM

CM

Base Current

− Continuous

− Peak (Note 1)

I

6

12

Adc

B

I

BM

Total Device Dissipation @ T = 25_C

P

150

1.2

W

W/_C

_C

C

D

Derate above 25°C

BUH150G

AY WW

Operating and Storage Temperature

THERMAL CHARACTERISTICS

T , T

J

−65 to 150

stg

Characteristics

Symbol

Max

Unit

_C/W

_C

Thermal Resistance, Junction−to−Case

R

q

JC

0.85

BUH150 = Device Code

Thermal Resistance, Junction−to−Ambient

R

q

JA

62.5

260

A

Y

= Assembly Location

= Year

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

T

L

WW

G

= Work Week

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

ORDERING INFORMATION

Device

Package

Shipping

50 Units / Rail

BUH150G

TO−220

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

©

Semiconductor Components Industries, LLC, 2010

1

Publication Order Number:

April, 2010 − Rev. 5

BUH150/D

BUH150G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

V

400

700

10

460

860

12.3

Vdc

CEO(sus)

(I = 100 mA, L = 25 mH)

C

Collector−Base Breakdown Voltage

V

CBO

EBO

CEO

(I

CBO

= 1 mA)

Emitter−Base Breakdown Voltage

(I = 1 mA)

Vdc

EBO

Collector Cutoff Current

I

100

mAdc

(V = Rated V

, I = 0)

CEO B

CE

Collector Cutoff Current

@ T = 25°C

I

100

1000

C

CES

CBO

(V = Rated V

, V = 0)

CES EB

@ T = 125°C

CE

C

Collector Base Current

@ T = 25°C

I

100

1000

C

(V = Rated V

, V = 0)

CBO EB

@ T = 125°C

CB

C

Emitter−Cutoff Current

I

100

EBO

(V = 9 Vdc, I = 0)

EB

C

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

(I = 10 Adc, I = 2 Adc)

V

1

1.25

Vdc

BE(sat)

C

B

Collector−Emitter Saturation Voltage

(I = 2 Adc, I = 0.4 Adc)

@ T = 25°C

0.16

0.15

0.4

C

CE(sat)

@ T = 125°C

C

B

C

(I = 10 Adc, I = 2 Adc)

@ T = 25°C

0.45

2

1

5

Vdc

C

B

C

(I = 20 Adc, I = 4 Adc)

@ T = 25°C

C

B

DC Current Gain (I = 20 Adc, V = 5 Vdc)

@ T = 25°C

h

FE

4

7

C

CE

C

−

@ T = 125°C

2.5

4.5

C

(I = 10 Adc, V = 5 Vdc)

@ T = 25°C

8

6

12

10

C

CE

C

@ T = 125°C

C

(I = 2 Adc, V = 1 Vdc)

@ T = 25°C

12

14

20

22

−

C

CE

C

@ T = 125°C

C

(I = 100 mAdc, V = 5 Vdc)

@ T = 25°C

10

20

C

CE

C

DYNAMIC SATURATION VOLTAGE

@ T = 25°C

V

1.5

2.8

2.4

5

V

C

CE(dsat)

I

= 5 Adc, I = 1 Adc

B1

C

Dynamic Saturation

Voltage:

V

= 300 V

CC

@ T = 125°C

C

Determined 3 ms after

@ T = 25°C

rising I reaches 90% of

C

B1

I

C

= 10 Adc, I = 2 Adc

B1

final I (see Figure 19)

B1

V

CC

= 300 V

@ T = 125°C

C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

f

23

MHz

pF

T

(I = 1 Adc, V = 10 Vdc, f = 1 MHz)

C

CE

Output Capacitance

C

100

150

ob

(V = 10 Vdc, I = 0, f = 1 MHz)

CB

E

Input Capacitance

C

ib

1300

1750

pF

(V = 8 Vdc, f = 1 MHz)

EB

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2

BUH150G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)

Turn−on Time

Storage Time

Fall Time

@ T = 25°C

t

200

5.3

240

5.6

100

6.1

320

6.5

300

6.5

350

7

ns

ms

ns

ms

ns

ms

ns

ms

ns

C

on

I

= 2 Adc, I = 0.2 Adc

@ T = 25°C

t

s

C

B1

C

I

= 0.2 Adc

= 300 Vdc

B2

CC

@ T = 25°C

t

f

V

C

Turn−off Time

Turn−on Time

Storage Time

Fall Time

@ T = 25°C

t

C

off

on

@ T = 25°C

t

200

7.5

500

8

C

I

= 2 Adc, I = 0.4 Adc

@ T = 25°C

t

s

C

B1

C

I

= 0.4 Adc

= 300 Vdc

B2

@ T = 25°C

t

f

V

C

CC

Turn−off Time

Turn−on Time

@ T = 25°C

t

C

off

on

@ T = 25°C

t

450

800

650

C

= 5 Adc, I = 0.5 Adc

@ T = 125°C

C

B1

C

I

= 0.5 Adc

= 300 Vdc

B2

Turn−off Time

Turn−on Time

Turn−off Time

@ T = 25°C

t

2.5

3.9

3

ms

ns

ms

V

C

off

on

CC

@ T = 125°C

C

@ T = 25°C

t

500

900

700

2.75

C

I

= 10 Adc, I = 2 Adc

B1

@ T = 125°C

C

I

= 2 Adc

= 300 Vdc

B2

@ T = 25°C

t

2.25

2.75

V

C

off

CC

@ T = 125°C

C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 mH)

CC

clamp

Fall Time

@ T = 25°C

t

110

160

250

8

ns

ms

ns

ms

ns

ms

ns

ms

ns

C

fi

@ T = 125°C

C

I

B1

B2

= 2 Adc

= 0.2 Adc

C

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

si

6.5

8

C

I

@ T = 125°C

C

@ T = 25°C

t

235

240

350

250

7.5

C

c

fi

@ T = 125°C

C

@ T = 25°C

t

110

170

C

@ T = 125°C

C

I

C

= 2 Adc

= 0.4 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

si

6

7.8

C

I

B1

B2

@ T = 125°C

C

@ T = 25°C

t

c

250

270

350

150

3.75

350

175

2.75

350

C

@ T = 125°C

C

@ T = 25°C

t

fi

110

140

C

@ T = 125°C

C

I

C

= 5 Adc

= 0.5 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

si

3.25

4.6

C

I

B1

B2

@ T = 125°C

C

@ T = 25°C

t

c

275

450

C

@ T = 125°C

C

@ T = 25°C

t

fi

110

160

C

@ T = 125°C

C

I

= 10 Adc

= 2 Adc

C

B1

B2

Storage Time

Crossover Time

@ T = 25°C

t

si

2.3

2.8

C

I

@ T = 125°C

C

I

@ T = 25°C

t

c

250

475

C

@ T = 125°C

C

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3

BUH150G

TYPICAL STATIC CHARACTERISTICS

100

V

CE

= 1 V

V

CE

= 3 V

T = 125°C

J

T = 125°C

J

T = -ꢀ20°C

J

T = -ꢀ20°C

J

10

T = 25°C

J

T = 25°C

J

1

0.001

1

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

100

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 3 Volt

100

10

1

V

CE

= 5 V

I /I = 5

C B

T = 125°C

J

T = 125°C

J

T = -ꢀ20°C

J

T = 25°C

J

T = 25°C

J

10

T = -ꢀ20°C

J

0.1

0.01

1

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 3. DC Current Gain @ 5 Volt

Figure 4. Collector−Emitter Saturation Voltage

10

1

1.5

I /I = 10

C B

I /I = 5

C B

1

T = -ꢀ20°C

J

T = 125°C

J

T = 25°C

J

0.1

0.5

T = 125°C

J

T = 25°C

J

0.01

0

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

100

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 5. Collector−Emitter Saturation Voltage

Figure 6. Base−Emitter Saturation Region

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BUH150G

TYPICAL STATIC CHARACTERISTICS

1.5

2

T = 25°C

J

I /I = 10

C B

1.5

1

T = -ꢀ20°C

J

T = 25°C

J

20 A

0.5

15 A

V

CE(sat)

(I = 1 A)

T = 125°C

J

0.5

10 A

C

8 A

5 A

1

0

0.001

0

0.01

0.1

1

10

100

0.1

10

100

I , COLLECTOR CURRENT (AMPS)

C

I , BASE CURRENT (A)

B

Figure 7. Base−Emitter Saturation Region

Figure 8. Collector Saturation Region

10000

1000

900

800

700

600

T = 25°C

J

T = 25°C

(test)

J

f

= 1 MHz

BVCER @ 10 mA

C (pF)

ib

BVCER(sus) @ 200 mA

C

ob

(pF)

100

10

500

400

1

10

100

10

100

(W)

1000

V , REVERSE VOLTAGE (VOLTS)

R

BE

Figure 9. Capacitance

Figure 10. Resistive Breakdown

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5

BUH150G

TYPICAL SWITCHING CHARACTERISTICS

12

10

2000

1800

1600

1400

1200

1000

800

T = 25°C

T = 125°C

J

I

= I

I

= I

J

B1 B2

V

= 300 V

V

= 300 V

CC

I /I = 10

C B

PW = 20 ms

PW = 40 ms

25°C

8

6

4

125°C

I /I = 5

C B

125°C

600

400

2

0

I /I = 10

C B

25°C

I /I = 5

C B

200

0

3

6

9

12

15

0

5

10

15

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Resistive Switching, t_on

Figure 12. Resistive Switch Time, t_off

8

7

6

5

4

3

2

1

0

8

7

6

5

4

3

2

I /I = 5

C B

I

= I

B1 B2

I /I = 10

C B

I = I

B1 B2

V

CC

V = 300 V

= 15 V

V

CC

= 15 V

V = 300 V

Z

L = 200 mH

C

L = 200 mH

C

T = 125°C

T = 25°C

T = 125°C

T = 25°C

J

1

0

J

1

3

5

7

9

11

13

1

4

7

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 13. Inductive Storage Time, t_si

Figure 13 Bis. Inductive Storage Time, t_si

550

450

350

250

800

700

600

500

400

300

200

I

= I

T = 125°C

T = 25°C

B1 B2

J

I

= I

T = 125°C

B1 B2

C

V

= 15 V

V = 300 V

CC

J

V = 15 V

V = 300 V

T = 25°C

C

CC

Z

L = 200 mH

C

L = 200 mH

C

t

c

t

c

t

fi

t

fi

150

50

100

0

1

3

5

7

9

11

13

0

2

4

6

8

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 14. Inductive Storage Time,

t_c& t_fi@ I_C/I_B= 5

Figure 15. Inductive Storage Time,

t_c& t_fi@ I_C/I_B= 10

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6

BUH150G

TYPICAL SWITCHING CHARACTERISTICS

5

4

3

2

200

T = 125°C

T = 25°C

J

I = 5 A

C

150

100

I = 5 A

C

I

= I

I

= I

B1 B2

Boff B2

50

0

I = 10 A

C

V = 15 V

V = 300 V

V

= 15 V

1

0

CC

I = 10 A

C

V = 300 V

Z

T = 125°C

T = 25°C

J

Z

J

L = 200 mH

C

L = 200 mH

C

2

4

6

8

10

3

4

5

6

7

8

9

10

h

FE

, FORCED GAIN

h

FE

, FORCED GAIN

Figure 16. Inductive Storage Time

Figure 17. Inductive Fall Time

800

I

= I

T = 125°C

T = 25°C

J

B1 B2

J

700

600

500

400

V = 15 V

V = 300 V

CC

Z

L = 200 mH

C

I = 10 A

C

I = 5 A

C

300

200

100

3

4

5

6

7

8

9

10

h

FE

, FORCED GAIN

Figure 18. Inductive Crossover Time

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7

BUH150G

TYPICAL SWITCHING CHARACTERISTICS

10

V

I

C

9

8

7

6

5

4

CE

90% I

C

t

fi

dyn 1 ms

t

si

dyn 3 ms

10% I

C

V

10% V

90% I

0 V

clamp

t

c

90% I

B

B1

3

2

1

0

I

B

1 ms

I

B

3 ms

0

1

2

3

4

5

6

8

7

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

I PEAK

C

100 mF

1 mF

100 W

3 W

MTP8P10

150 W

3 W

V

CE

PEAK

V

CE

MTP8P10

R

MPF930

B1

I 1

B

MUR105

MJE210

MPF930

I

B

+10 V

out

A

I 2

B

50

R

B2

W

COMMON

MTP12N10

150 W

3 W

V

(BR)CEO(sus)

L = 10 mH

Inductive Switching

RBSOA

L = 500 mH

L = 200 mH

R

500 mF

R

= ∞

= 20 Volts

= 100 mA

= 0

= 15 Volts

selected for

R

= 0

= 15 Volts

B2

CC

B2

V

CC

1 mF

CC

I

R

B1

desired I

R selected for

B1

C(pk)

-V

off

desired I

B1

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8

BUH150G

TYPICAL THERMAL RESPONSE

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I −V

1

0.8

0.6

0.4

C

CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 22 is

SECOND BREAKDOWN

DERATING

based on T = 25°C; T

is variable depending on power

level. Second breakdown pulse limits are valid for duty cycles

C

J(pk)

THERMAL DERATING

to 10% but must be derated when T > 25°C. Second

C

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using the

appropriate curve on Figure 21.

0.2

0

T

J(pk)

may be calculated from the data in Figure 24. At any

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed

by second breakdown. For inductive loads, high voltage and

current must be sustained simultaneously during turn−off

with the base to emitter junction reverse biased. The safe level

is specified as a reverse biased safe operating area

(Figure 23). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

20

40

60

80

100

120

140

160

T , CASE TEMPERATURE (°C)

C

Figure 21. Forward Bias Power Derating

16

100

10

GAIN ≥ 5

T ≤ 125°C

C

14

12

10

8

1 ms

L = 4 mH

10 ms

5 ms

1 ms

DC

1

6

-5 V

0.1

4

0 V

-1.5 V

2

0

0.01

1

10

100

1000

300

400

500

600

700

800

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

Figure 22. Forward Bias Safe Operating Area

Figure 23. Reverse Bias Safe Operating Area

1

0.5

0.2

0.1

P

(pk)

R

(t) = r(t) R

q

JC

q

JC

= 0.83°C/W MAX

q

JC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.05

0.02

t

1

t

2

T

- T = P

C

R (t)

q

JC

J(pk)

(pk)

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.1

0.01

1

10

100

1000

t, TIME (ms)

Figure 24. Typical Thermal Response (Z_q_JC(t)) for BUH150

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9

BUH150G

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

C

S

B

F

T

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

4.09

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

A

B

C

D

F

G

H

J

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.161

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

A

K

Q

Z

1

2

3

U

H

K

L

N

Q

R

S

T

U

V

Z

L

R

J

V

G

D

0.080

2.04

N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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BUH150/D

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10


型号：	BUH150G
厂家：	ONSEMI
描述：	SWITCHMODE NPN Silicon Planar Power Transistor 开关模式？ NPN硅平面功率晶体管晶体开关晶体管功率双极晶体管局域网
文件：	总10页 (文件大小：234K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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