BUH313 [STMICROELECTRONICS]
HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR; 高压FASTSWITCHING NPN功率晶体管
| 型号： | BUH313 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUH313
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
■
■
■
SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR COLOUR
TV
3
2
■
SWITCH MODE POWER SUPPLIES
1
ISOWATT218
DESCRIPTION
The BUH313 is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhanceswitching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
1300
V
V
600
10
V
5
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
8
A
IB
3
A
IBM
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
5
44
A
Ptot
W
oC
oC
Tstg
Tj
-65 to 150
150
Max. Operating Junction Temperature
1/7
June 1996
BUH313
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
2.8
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 1300 V
VCE = 1300 V Tj = 125 oC
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
1
2
mA
mA
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
100
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 100 mA
600
10
V
VEBO
VCE(sat)
VBE(sat)
hFE
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
V
Collector-Emitter
Saturation Voltage
IC = 3 A IB = 0.75 A
IC = 3 A IB = 0.75 A
1.5
1.3
V
Base-Emitter
Saturation Voltage
V
DC Current Gain
IC = 3 A VCE = 5 V
5.5
3.5
IC = 3 A VCE = 5 V Tj = 100 oC
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 400 V IC = 3 A
ts
tf
IB1 = 0.75 A
IB2 = 1.5 A
1.6
110
2.4
200
µs
ns
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 3 A
IB1 = 0.75 A
f = 15625 Hz
IB2 = -1.5 A
π
ts
tf
3.5
340
µs
ns
Vceflyback = 1050 sin 106
5
t
V
V
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 3 A
IB1 = 0.75 A
Vceflyback = 1200 sin 106
f = 31250 Hz
IB2 = -1.5 A
ts
tf
3.5
270
µs
ns
π
5
t
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
2/7
BUH313
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz
(see figure 2)
3/7
BUH313
Power Losses at 32 KHz
Switching Time Inductive Load at 32 KHz
(see figure 2)
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
illustrated in figure 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at both 16 KHz, 32 KHz and
64KHz scanning frequencies for choosing the
optimum negative drive. The test circuit is
The values of L and C are calculated from the
following equations:
1
2
1
2
1
√L C
2
L (IC)2 = C (VCEfly
)
ω = 2 πf =
Where IC= operating collector current, VCEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
4/7
BUH313
Figure 1: InductiveLoad Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BUH313
ISOWATT218 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
5.35
3.3
TYP.
MAX.
5.65
3.8
MIN.
0.210
0.130
0.114
0.074
0.017
0.041
0.425
0.622
0.818
0.752
0.897
1.594
0.190
0.797
0.137
0.082
MAX.
0.222
0.149
0.122
0.081
0.039
0.049
0.441
0.637
0.834
0.783
0.929
1.673
0.206
0.817
0.145
0.090
A
C
D
2.9
3.1
D1
E
1.88
0.45
1.05
10.8
15.8
20.8
19.1
22.8
40.5
4.85
20.25
3.5
2.08
1
F
1.25
11.2
16.2
21.2
19.9
23.6
42.5
5.25
20.75
3.7
G
H
L1
L2
L3
L4
L5
L6
M
N
2.1
2.3
U
4.6
0.181
L3
N
L2
L5
L6
M
1
2
3
L1
L4
P025C
6/7
BUH313
Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized for use as critical components in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia- Malta- Morocco - TheNetherlands -
Singapore- Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A
. .
7/7
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