BUH313 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUH313 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH313
DESCRIPTION
·With TO-3PML package
·High voltage
·High speed switching
APPLICATIONS
·Horizontal deflection for color TV
·Switch mode power supplies.
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
VALUE
1300
600
UNIT
V
Open emitter
Open base
V
Open collector
10
V
Collector current (DC)
Collector current-peak
Total power dissipation
Operating junction temperature
Storage temperature
5
A
ICM
tp<5ms
TC=25ꢀ
10
A
Ptot
50
W
ꢀ
Tj
150
Tstg
-65~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH313
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
600
10
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA; IB=0
Emitter-base breakdown voltage
IE=10mA; IC=0
V
Collector-emitter saturation voltage IC=3A ;IB=0.75A
1.5
1.3
0.2
0.1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=3A ;IB=0.75A
VCE=1300V; VBE=0
VEB=5V; IC=0
V
mA
mA
IEBO
hFE-1
IC=1A ; VCE=5V
IC=3A ; VCE=5V
10
hFE-2
DC current gain
5.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
2.8
UNIT
ꢀ/W
Rth j-c
Thermal resistance from junction to case
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH313
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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