BF959ZL1 [ONSEMI]
VHF Transistor;
| 型号： | BF959ZL1 |
| 厂家： | 
ONSEMI |
| 描述： | VHF Transistor 放大器 射频 小信号双极晶体管 射频小信号双极晶体管 |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
Unit
Vdc
1
2
3
V
CEO
V
CBO
V
EBO
20
30
Vdc
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
3.0
100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0)
V
V
V
20
30
3.0
—
—
—
—
—
—
—
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector–Base Breakdown Voltage (I = 10 Adc, I = 0)
C
E
Emitter–Base Breakdown Voltage (I = 10 Adc, I = 0)
—
Vdc
E
C
Collector Cutoff Current (V
CB
= 20 Vdc, I = 0)
I
100
nAdc
E
CBO
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 5.0 mAdc, V
= 10 Vdc)
= 10 Vdc)
35
40
—
—
—
—
C
CE
CE
(I = 20 mAdc, V
C
Collector–Emitter Saturation Voltage (I = 30 mAdc, I = 2.0 mAdc)
V
—
—
—
—
1.0
1.0
Vdc
Vdc
C
B
CE(sat)
V
BE(sat)
Base–Emitter Saturation Voltage (I = 30 mAdc, I = 2.0 mAdc)
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
B
f
T
MHz
(I = 20 mAdc, V
(I = 30 mAdc, V
C
= 10 Vdc, f = 100 MHz)
= 10 Vdc, f = 100 MHz)
700
600
—
—
—
—
C
CE
CE
Common Emitter Feedback Capacitance
(V = 10 Vdc, P = 0, f = 10 MHz)
C
—
0.65
—
pF
dB
re
CB
f
Noise Figure (I = 4.0 mA, V
= 10 V, R = 50 Ω, f = 200 MHz)
N
f
—
3.0
—
C
CE
S
Motorola, Inc. 1996
500
1000
500
200
100
200
100
50
40
50
40
30
30
20
20
10
10
1
1
1
2
3
4
5
10
20
30
50
100
100
100
1
1
1
2
3
4
5
10
I , COLLECTOR CURRENT (mA)
C
20
30
50
100
50
I , COLLECTOR CURRENT (mA)
C
Figure 1. h
FE
at 10 V
Figure 2. V
at I /I = 10
C B
CE(sat)
2.0
1.8
1.6
1.4
1.2
1.8
1.6
1.4
1.2
1
C
ib
1
0.8
0.6
C
ob
0.8
10 V
5 V
2 V
C
re
0.6
0.4
0.4
0.2
2
3
4
5
10
20
30 40 50
2
3
4
5
10
20
30
50
I
, COLLECTOR CURRENT (mA)
V
, REVERSE VOLTAGE (VOLTS)
C
R
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
10
500
b22e
300
200
g11e
5
4
3
g22e
V
= 10 V
CE
V
= 10 V
CE
2
100
b11e
1
50
40
30
0.5
0.4
0.3
20
0.2
10
0.1
2
3
4
5
10
20
30
50
2
3
4
5
10
I , COLLECTOR CURRENT (mA)
C
20
30
I
, COLLECTOR CURRENT (mA)
C
Figure 5. Input Impedance at 30 MHz
Figure 6. Output Impedance at 30 MHz
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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