BF959ZL1G [ROCHESTER]
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, CASE 29, 3 PIN;
| 型号： | BF959ZL1G |
| 厂家： | 
Rochester Electronics |
| 描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, CASE 29, 3 PIN 放大器 晶体管 |
| 文件： | 总5页 (文件大小：735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF959
VHF Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
20
Unit
Vdc
3
BASE
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation
V
CEO
V
30
Vdc
CBO
EBO
2
EMITTER
V
3.0
Vdc
I
C
100
mAdc
P
D
D
MARKING
DIAGRAM
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
Total Device Dissipation
P
@ T = 25°C
1.5
12
W
mW/°C
C
Derate above 25°C
BF
959
TO−92
CASE 29
STYLE 21
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
AYWWG
1
G
2
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
BF959 = Device Code
Thermal Resistance,
Junction−to−Ambient
R
200
°C/W
q
JA
A
= Assembly Location
Y
= Year
= Work Week
= Pb−Free Package
Thermal Resistance,
Junction−to−Case
R
83.3
°C/W
q
JC
WW
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
BF959
TO−92
5000 Units/Box
5000 Units/Box
BF959G
TO−92
(Pb−Free)
BF959RL1
TO−92
2000/Tape & Reel
2000/Tape & Reel
BF959RL1G
TO−92
(Pb−Free)
BF959ZL1
TO−92
2000/Ammo Pack
2000/Ammo Pack
BF959ZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005 − Rev. 3
BF959/D
BF959
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0)
V
V
V
20
30
3.0
−
−
−
−
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
Vdc
E
C
Collector Cutoff Current (V = 20 Vdc, I = 0)
I
CBO
100
nAdc
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 5.0 mAdc, V = 10 Vdc)
35
40
−
−
−
−
C
CE
(I = 20 mAdc, V = 10 Vdc)
C
CE
Collector−Emitter Saturation Voltage (I = 30 mAdc, I = 2.0 mAdc)
V
−
−
−
−
1.0
1.0
Vdc
Vdc
C
B
CE(sat)
V
BE(sat)
Base−Emitter Saturation Voltage (I = 30 mAdc, I = 2.0 mAdc)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
B
f
T
MHz
(I = 20 mAdc, V = 10 Vdc, f = 100 MHz)
700
600
−
−
−
−
C
CE
(I = 30 mAdc, V = 10 Vdc, f = 100 MHz)
C
CE
Common Emitter Feedback Capacitance
(V = 10 Vdc, P = 0, f = 10 MHz)
C
−
0.65
−
pF
dB
re
CB
f
Noise Figure (I = 4.0 mA, V = 10 V, R = 50 W, f = 200 MHz)
N
f
−
3.0
−
C
CE
S
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2
BF959
500
1000
500
200
100
200
100
50
40
50
40
30
30
20
20
10
10
1
1
1
2
3
4
5
10
20 30
50
100
100
100
1
1
1
2
3
4
5
10
20
30
50
100
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. hFE at 10 V
Figure 2. VCE(sat) at IC/IB = 10
2.0
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
C
ib
0.8
0.6
C
ob
0.8
0.6
0.4
10 V
5 V
2 V
C
re
0.4
0.2
2
3
4
5
10
20 30 40 50
2
3
4
5
10
20 30
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current−Gain − Bandwidth Product
Figure 4. Capacitances
10
500
b22e
300
200
g11e
5
4
3
g22e
V
CE
= 10 V
V
CE
= 10 V
2
100
b11e
1
50
40
0.5
0.4
0.3
30
20
0.2
10
0.1
2
3
4
5
10
20 30
50
2
3
4
5
10
20
30
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Input Impedance at 30 MHz
Figure 6. Output Impedance at 30 MHz
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3
BF959
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
J
H
V
K
L
−−−
−−−
C
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
SECTION X−X
0.115
0.135
2.93
3.43
1
N
−−−
−−−
N
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BF959/D
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