BF961 [VISHAY]
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管，耗尽型
| 型号： | BF961 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 文件： | 总7页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF961
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
3
Features
4
• Integrated gate protection diodes
2
• High cross modulation performance
• Low noise figure
1
• High AGC-range
• Low feedback capacitance
• Low input capacitance
G
D
S
2
G
1
Electrostatic sensitive device.
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Observe precautions for handling.
13625
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Part
Ordering Ccode
BF961A or BF961B
Marking
Package
BF961
BF961
BF961
BF961
TO50
TO50
TO50
BF961A
BF961B
BF961A
BF961B
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
20
Unit
V
Drain - source voltage
VDS
ID
Drain current
30
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Total power dissipation
Channel temperature
Tamb ≤ 60 °C
Ptot
TCh
Tstg
200
150
mW
°C
Storage temperature range
- 55 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthChA
Value
450
Unit
K/W
1)
Channel ambient
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 µm Cu
Document Number 85002
Rev. 1.5, 25-Nov-04
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1
BF961
Vishay Semiconductors
VISHAY
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
V(BR)DS
Min
20
Typ.
Max
Unit
V
Drain - source breakdown
voltage
ID = 10 µA, - VG1S = - VG2S = 4 V
IG1S = 10 mA, VG2S = VDS = 0
IG2S = 10 mA, VG1S = VDS = 0
VG1S = 5 V, VG2S = VDS = 0
Gate 1 - source breakdown
voltage
V(BR)G1SS
V(BR)G2SS
8
8
14
14
V
V
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain current
IG1SS
IG2SS
100
100
20
nA
nA
mA
mA
mA
V
V
G2S = 5 V, VG1S = VDS = 0
V
DS = 15 V, VG1S = 0, VG2S = 4 V BF961
IDSS
4
4
BF961A
BF961B
IDSS
10.5
20
IDSS
9.5
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
V
DS = 15 V, VG2S = 4 V,
- VG1S(OFF)
3.5
ID = 20 µA
DS = 15 V, VG1S = 0, ID = 20 µA
V
- VG2S(OFF)
3.5
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
V
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter Test condition
Symbol
| y21s
Min
12
Typ.
Max
Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
|
15
3.7
1.6
25
mS
pF
pF
fF
Cissg1
Cissg2
Crss
V
G1S = 0, VG2S = 4 V
Coss
Gps
1.6
20
pF
dB
G
S = 2 mS, GL = 0.5 mS,
f = 200 MHz
G2S = 4 to - 2 V, f = 200 MHz
S = 2 mS, GL = 0.5 mS,
f = 200 MHz
AGC range
Noise figure
V
∆Gps
50
dB
dB
G
F
1.8
2.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
250
200
150
100
50
22
20
18
16
14
12
10
8
V
= 0.6 V
G1S
0.4 V
0.2 V
0
–0.2 V
6
–0.4 V
–0.6 V
–0.8 V
4
2
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8 10 12 14 16 18 20 22 24
– Drain Source Voltage ( V )
96 12159
96 12160
V
DS
T
- Ambient Temperature ( °C )
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Drain Current vs. Drain Source Voltage
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Document Number 85002
Rev. 1.5, 25-Nov-04
BF961
Vishay Semiconductors
VISHAY
24
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
22
20
18
16
14
12
10
8
6
4
2
0
V
= 15 V
= 10 mA
V
V
= 15 V
= 0
DS
DS
V
= 0.5 V
0 V
I
G1S
DS
G1S
f = 1 MHz
–0.5 V
–2 –1
0
1
2
3
4
5
6
–2 –1
0
1
2
3
4
5
6
7
96 12161
V
– Gate 2 Source Voltage ( V )
96 12164
V
– Gate 2 Source Voltage ( V )
G2S
G2S
Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
22
3.0
V
= 15 V
f = 1 MHz
DS
20
18
16
14
12
10
8
V
= 4 V
G2S
V
= 5 V
G2S
2.5
2.0
1.5
1.0
0.5
0.0
f = 1 MHz
4 V
3 V
6
0 V
4
2 V
1 V
2
0
-2 -1.5 -1 -0.5
0
0.5
1 1.5 2 2.5 3 3.5
0
2
4
6
8
10 12 14 16 18 20 22
V
96 12162
- Gate 1 Source Voltage ( V )
96 12165
V
- Drain Source V oltage ( V )
G1S
DS
Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage
Figure 7. Output Capacitance vs. Drain Source Voltage
18
4.0
3.5
f =700 MHz
600 MHz
16
14
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
V
= 15 V
= 4 V
DS
G2S
500 MHz
400 MHz
f = 1 MHz
300 MHz
200 MHz
100 MHz
6
V
V
= 15 V
DS
= 4 V
G2S
4
I
= 5...20 mA
D
f = 50...700 MHz
2
0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
– Gate 1 Source Voltage ( V )
0
1
2
3
4
5
6
7
8
9
10
96 12163
V
96 12166
Re (y ) ( mS )
11
G1S
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
Figure 8. Short Circuit Input Admittance
Document Number 85002
Rev. 1.5, 25-Nov-04
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BF961
Vishay Semiconductors
VISHAY
10
V
V
= 15 V
DS
5
0
= 4 V
G2S
f = 50...700 MHz
f = 50 MHz
I
= 5 mA
D
100 MHz
200 MHz
–5
10 mA
20 mA
–10
–15
–20
–25
–30
300 MHz
400 MHz
500 MHz
600 MHz
700 MHz
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28
Re (y ( mS )
96 12167
)
21
Figure 9. Short Circuit Forward Transfer Admittance
7.0
6.5
f = 700 MHz
6.0
5.5
600 MHz
I
= 5 mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D
500 MHz
= 20 mA
I
D
400 MHz
300 MHz
V
V
= 15 V
DS
= 4 V
G2S
200 MHz
100 MHz
I
= 5...20 mA
D
f = 50...700 MHz
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
96 12168
Re (y ) ( mS )
22
Figure 10. Short Circuit Output Admittance
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Document Number 85002
Rev. 1.5, 25-Nov-04
BF961
Vishay Semiconductors
VISHAY
V
S
= 15 V, I = 5 to 20 mA, V
= 4 V, Z = 50 Ω
DS
11
D
G2S
0
S
12
90°
60°
j
120°
j0.5
j2
150°
30°
j0.2
300
j5
600
700 MHz
180°
0.04
0.08 0°
–30°
∞
0
0.2 0.5
1
2
5
50
100
–j0.2
–j5
–150°
700 MHz
300
500
–j2
–j0.5
°
–60°
–120
–90°
12921
12920
–j
Figure 11. Input Reflection Coefficient
Figure 13. Reverse Transmission Coefficient
S
S
22
21
90°
j
I
= 20 mA
D
120°
60°
I
= 10 mA
= 5 mA
D
j0.5
j2
5
I
D
30°
400
j0.2
0
200
j5
700MHz
0.8
50
180 °
1.6
0°
∞
ı
0.2
0.5
1
2
100
300
500
–j0.2
–j5
–30°
–150°
700 MHz
–j2
–j0.5
–120°
–60°
–90°
12923
12922
–j
Figure 12. Forward Transmission Coefficient
Figure 14. Output Reflection Coefficient
Document Number 85002
Rev. 1.5, 25-Nov-04
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5
BF961
Vishay Semiconductors
VISHAY
Package Dimensions in mm
96 12242
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Document Number 85002
Rev. 1.5, 25-Nov-04
BF961
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85002
Rev. 1.5, 25-Nov-04
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