BAV99RWT1 [ONSEMI]
SC-70/SOT-323 Dual Series Switching Diode; SC - 70 / SOT- 323双系列开关二极管![BAV99RWT1](http://pdffile.icpdf.com/pdf1/p00060/img/icpdf/BAV99_317194_icpdf.jpg)
型号: | BAV99RWT1 |
厂家: | ![]() |
描述: | SC-70/SOT-323 Dual Series Switching Diode |
文件: | 总6页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BAV99WT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
3
•
•
•
•
•
ESD Protection
1
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
2
ANODE
1
CATHODE
2
3
MAXIMUM RATINGS (EACH DIODE)
Rating
CATHODE/ANODE
Symbol
Value
70
Unit
Vdc
mAdc
mAdc
V
BAV99WT1
CASE 419–02, STYLE 9
SC–70/SOT–323
Reverse Voltage
V
R
Forward Current
I
F
215
500
70
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
I
FM(surge)
CATHODE
ANODE
2
V
RRM
1
(1)
Average Rectified Forward Current
I
715
mA
F(AV)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
3
I
450
mA
A
CATHODE/ANODE
FRM
I
BAV99RWT1
CASE 419–02, STYLE 10
SC–70/SOT–323
FSM
t = 1.0
s
2.0
1.0
0.5
t = 1.0 ms
t = 1.0 S
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
(1)
T = 25°C
A
P
200
mW
D
FR–5 Board,
Derate above 25°C
1.6
625
300
mW/°C
°C/W
mW
Thermal Resistance Junction to Ambient
Total Device Dissipation
R
JA
D
P
(2)
Alumina Substrate,
T
A
= 25°C
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R
417
JA
T , T
J stg
–65 to +150
°C
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
DEVICE MARKING
BAV99WT1 = A7
BAV99RWT1 = F7
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 µA)
V
70
—
Vdc
Adc
(BR)
(BR)
Reverse Voltage Leakage Current (V = 70 Vdc)
I
R
—
—
—
2.5
30
50
R
(V = 25 Vdc, T = 150°C)
R
J
J
(V = 70 Vdc, T = 150°C)
R
Diode Capacitance
(V = 0, f = 1.0 MHz)
C
V
—
1.5
pF
D
R
Forward Voltage (I = 1.0 mAdc)
—
—
—
—
715
855
1000
1250
mVdc
F
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, i
= 1.0 mAdc) (Figure 1) R = 100
t
rr
—
—
6.0
ns
V
F
R
R(REC)
L
Forward Recovery Voltage (I = 10 mA, t = 20 ns)
V
FR
1.75
F
r
820
Ω
+10 V
2 k
0.1 µF
I
F
t
t
t
r
p
I
F
100 µH
t
rr
t
10%
90%
0.1
µF
DUT
50
Ω
OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t » t
rr
p
Figure 1. Recovery Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
CURVES APPLICABLE TO EACH DIODE
100
10
10
T
= 150
°
C
C
A
T
= 125
°
A
1.0
0.1
T
= 85°C
T = 85°C
A
A
T
= 25°C
A
1.0
0.1
T
= 55
°C
A
0.01
T
= –40
°C
A
T
= 25
°C
A
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
V , REVERSE VOLTAGE (VOLTS)
R
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SC–70/SOT–323
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function
SOLDERING PRECAUTIONS
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SC–70/SOT–323
package, P can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 200 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
625°C/W
P
=
= 200 milliwatts
D
The 625°C/W for the SC–70/SOT–323 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of 200
milliwatts. There are other alternatives to achieving higher
power dissipation from the SC–70/SOT–323 package.
Another alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a board
material such as Thermal Clad, an aluminum core board, the
power dissipation can be doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3
2. CONTROLLING DIMENSION: INCH.
B
S
INCHES
MILLIMETERS
1
2
DIM
A
B
C
D
G
H
J
MIN
MAX
0.087
0.053
0.049
0.016
0.055
0.004
0.010
MIN
1.80
1.15
0.90
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.25
0.40
1.40
0.10
0.25
0.071
0.045
0.035
0.012
0.047
0.000
0.004
D
V
G
K
L
N
R
S
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
R
N
J
C
0.031
0.079
0.012
0.039
0.087
0.016
0.80
2.00
0.30
1.00
2.20
0.40
0.05 (0.002)
V
K
H
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE–ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
CASE 419–02
ISSUE H
SC–70/SOT–323
3. ANODE–CATHODE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
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ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
BAV99WT1/D
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