BAV99S [PANJIT]

HIGH SPEED SWITCHING DIODE ARRAY; 高速开关二极管阵列
BAV99S
型号: BAV99S
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

HIGH SPEED SWITCHING DIODE ARRAY
高速开关二极管阵列

二极管 开关
文件: 总3页 (文件大小:484K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV99S  
200 mA  
CURRENT  
85 Volts  
VOLTAGE  
HIGH SPEED SWITCHING DIODE ARRAY  
This device comes with two pairs of high speed switching diodes connected  
in series, where both pairs are electrically isolated, offering a very low  
capacitance, minmizing the insertion losses in data transmission lines.  
FEATURES  
• Maximum capacitance of 1.5pF  
• Maximum leakage current of 2.5 µA  
• Reverse breakdown voltage of 70V  
• Rail to rail ESD protection  
• Overshoot and undershoot switching control  
• Mobile phones and accessories  
• Video game consoles connector ports  
• Pb free product are available : 99% Sn above can meet Rohs  
environment substance directive request  
MECHANICAL DATA  
Case: SOT-363 molded plastic  
Terminals: Lead solderable per MIL-STD-202G, Method 208.  
MAXIMUM RATINGS (PER DIODE) TJ = 25OC, UNLESS OTHERWISE NOTED  
Rating  
Symbol  
VRRM  
VR  
Value  
85  
Units  
V
Maximum repetitve peak reverse voltage  
Continuous reverse voltage  
75  
V
Continuous forward voltage  
IF  
200  
mA  
Non-repetitve peak forward current, t=1 µ sec,  
IFSM  
PTOT  
TJ  
4.5  
250  
A
mW  
OC  
Tj=25 OC square wave  
Total power dissioation , Tj=85 OC  
Operating Junction Temperature range  
Storage temperature range  
-50 to + 150  
-50 to + 150  
260  
TSTG  
OC  
Soldering Temperature, t max = 10 secs  
TL  
OC  
PAGE . 1  
REV.0-MAR.26.2005  
BAV99S  
ELECTRICAL CHARACTERISTICS (PER DIODE) TJ = 25OC, UNLESS OTHERWISE NOTED  
Parameter  
Breakdown voltage  
Symbol  
VBR  
Conditions  
Min  
75  
Typ  
Max  
Units  
IBR=100 µA  
IF=1mA  
IF=10mA  
IF=50mA  
IF=150mA  
715  
855  
1
mV  
mV  
V
Forward voltage  
VF  
1.25  
V
µ A  
µ A  
pF  
Reverse leakage current  
IR  
IR  
VR=75V  
2.5  
VR=25V  
VR=70V  
30  
50  
Reverse leakage current at Tj=150OC  
Junction capacitance  
CD  
0Vdc Bias, f=1MHz  
1.5  
IF=10mA,IR=10mA  
RL=100 Ohms  
measured at I  
R=1mA  
Reverse recovery time  
trr  
4
ns  
V
Forward recovery voltage  
Vfr  
IF=10mA,tr=20nsec  
1.75  
PAGE . 2  
REV.0-MAR.26.2005  
BAV99S  
100  
10  
TJ=150OC  
TJ=150OC  
1
10  
TJ=75OC  
TJ=25OC  
0.1  
0.01  
TJ=75OC  
1
TJ=25OC  
TJ=-25OC  
0.001  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
20  
40  
60  
80  
Reverse voltage, VR(V)  
Forward voltage, VF(V)  
Fig.1-Typical forward voltage  
Fig.2-Typical reverse leakage  
0.8  
0.6  
0.4  
0.2  
0
0
10  
20  
30  
40  
50  
60  
Reverse voltage.VR(V)  
Fig.3-Typical capacitance  
PAGE . 3  
REV.0-MAR.26.2005  

相关型号:

BAV99S,115

DIODE ARRAY GP 100V 200MA 6TSSOP
ETC

BAV99S,125

DIODE 0.2 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN, Signal Diode
NXP

BAV99S,135

BAV99 series - High-speed switching diodes TSSOP 6-Pin
NXP

BAV99S,165

DIODE 0.2 A, 100 V, 4 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN, Signal Diode
NXP

BAV99S-AU

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAV99S-AU_R1_000A1

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAV99S-AU_R2_000A1

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAV99S-AU_S1_000A1

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAV99S-E6327

For high-speed switching applications
INFINEON

BAV99S-Q

High-speed switching diodeProduction
NEXPERIA

BAV99S.115

High-speed switching diodes
NXP

BAV99S/DG,115

BAV99 series - High-speed switching diodes TSSOP 6-Pin
NXP