BAV99RWT1G [ONSEMI]
Dual Series Switching Diodes; 双系列开关二极管![BAV99RWT1G](http://pdffile.icpdf.com/pdf1/p00043/img/icpdf/BAV99_225151_icpdf.jpg)
型号: | BAV99RWT1G |
厂家: | ![]() |
描述: | Dual Series Switching Diodes |
文件: | 总4页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BAV99WT1, BAV99RWT1
Preferred Devices
Dual Series Switching
Diodes
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Features
http://onsemi.com
• Pb−Free Packages are Available
Suggested Applications
ANODE
1
CATHODE
• ESD Protection
2
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
3
CATHODE/ANODE
BAV99WT1
SC−70
CASE 419, STYLE 9
CATHODE
1
ANODE
MAXIMUM RATINGS (Each Diode)
2
Rating
Reverse Voltage
Symbol
Value
70
Unit
Vdc
mAdc
mAdc
V
V
R
3
CATHODE/ANODE
Forward Current
I
F
215
500
70
BAV99RWT1
SC−70
CASE 419, STYLE 10
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
I
FM(surge)
V
RRM
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
I
715
mA
F(AV)
MARKING
DIAGRAM
Repetitive Peak Forward Current
I
450
mA
A
FRM
3
Non−Repetitive Peak Forward Current
I
FSM
SC−70
CASE 419
x7....D
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
2.0
1.0
0.5
1
2
A7 = BAV99WT1
F7 = BAV99RWT1
D = Date Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
†
Device
Package
Shipping
BAV99WT1
SC−70
3000/Tape & Reel
3000/Tape & Reel
BAV99WT1G
SC−70
(Pb−Free)
BAV99RWT1
SC−70
3000/Tape & Reel
3000/Tape & Reel
BAV99RWT1G
SC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 4
BAV99WT1/D
BAV99WT1, BAV99RWT1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board, (Note 1) T = 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
A
Thermal Resistance Junction−to−Ambient
R
625
°C/W
q
JA
Total Device Dissipation Alumina Substrate, (Note 2) T = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
A
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−65 to +150
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 mA)
V
(BR)
70
−
Vdc
(BR)
Reverse Voltage Leakage Current (V = 70 Vdc)
I
R
−
−
−
2.5
30
50
mAdc
R
(V = 25 Vdc, T = 150°C)
R
J
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance
(V = 0, f = 1.0 MHz)
C
V
−
1.5
pF
D
R
Forward Voltage (I = 1.0 mAdc)
−
−
−
−
715
855
1000
1250
mVdc
F
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, i
= 1.0 mAdc) (Figure 1) R = 100 W
t
rr
−
−
6.0
ns
V
F
R
R(REC)
L
Forward Recovery Voltage (I = 10 mA, t = 20 ns)
V
FR
1.75
F
r
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
820 W
+10 V
2 k
0.1 mF
I
F
t
r
t
p
t
I
F
100 mH
0.1 mF
t
rr
t
10%
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; measured
F
R
at i
= 1 mA)
R(REC)
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: (b) Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: (c) t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
BAV99WT1, BAV99RWT1
CURVES APPLICABLE TO EACH DIODE
100
10
10
T = 150°C
A
T = 125°C
A
1.0
0.1
T = 85°C
A
T = 85°C
A
T = 25°C
A
1.0
0.1
T = 55°C
A
0.01
T = −ꢂ40°C
A
T = 25°C
A
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
BAV99WT1, BAV99RWT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE L
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
INCHES
DIM MIN MAX
MILLIMETERS
3
MIN
1.80
1.15
0.80
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.00
0.40
1.40
0.10
0.25
A
B
C
D
G
H
J
0.071
0.045
0.032
0.012
0.047
0.000
0.004
0.087
0.053
0.040
0.016
0.055
0.004
0.010
B
S
1
2
D
G
K
L
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
N
S
0.079
0.095
2.00
2.40
J
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
N
C
0.05 (0.002)
K
H
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE−CATHODE
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
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