BAT54ALT1D [ONSEMI]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | BAT54ALT1D |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54ALT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc
F
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
CATHODE
ANODE
1
3
2
CATHODE
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
Rating
Reverse Voltage
Forward Power Dissipation
Symbol
Value
Unit
MARKING
DIAGRAM
V
R
30
V
P
F
@ T = 25°C
Derate above 25°C
225
1.8
mW
mW/°C
A
3
SOT−23
CASE 318
STYLE 12
B6M G
Forward Current (DC)
I
200 Max
600
mA
mA
F
G
1
Non−Repetitive Peak Forward Current
I
I
FSM
2
1
t < 10 msec
p
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
300
mA
B6
M
G
= Device Code
= Date Code*
= Pb−Free Package
FRM
(Note: Microdot may be in either location)
Junction Temperature
T
−55 to 150
°C
°C
J
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Storage Temperature Range
T
stg
−55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
BAT54ALT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
BAT54ALT3G
SOT−23
10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 − Rev. 11
BAT54ALT1/D
BAT54ALT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
30
−
−
V
(I = 10 mA)
R
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
−
−
−
−
−
−
−
−
7.6
0.5
10
2.0
pF
mAdc
Vdc
Vdc
Vdc
ns
T
Reverse Leakage
(V = 25 V)
R
I
R
Forward Voltage
(I = 0.1 mAdc)
F
V
F
V
F
V
F
0.22
0.41
0.52
−
0.24
0.5
Forward Voltage
(I = 30 mAdc)
F
Forward Voltage
(I = 100 mAdc)
F
0.8
Reverse Recovery Time
t
rr
5.0
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)
F
R
R(REC)
Forward Voltage
(I = 1.0 mAdc)
F
V
0.29
0.35
0.32
0.40
Vdc
Vdc
F
F
Forward Voltage
V
(I = 10 mAdc)
F
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2
BAT54ALT1G
820 W
+10 V
2 k
0.1 mF
I
F
t
r
t
p
T
I
F
100 mH
t
T
10%
90%
rr
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
T
A
= 150°C
125°C
85°C
100
10
T
A
= 125°C
10
1.0
0.1
1.0
150°C
T
A
= 85°C
0.1
0.01
25°C
−40°C
−55°C
T = 25°C
A
0.001
15
25
30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
20
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Total Capacitance
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3
BAT54ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
A
E
L
STYLE 12:
A1
L1
VIEW C
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAT54ALT1/D
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