BAT54ALT3 [ONSEMI]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | BAT54ALT3 |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54ALT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
http://onsemi.com
Features
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc
F
• Pb−Free Packages are Available
CATHODE
ANODE
1
3
2
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
CATHODE
Rating
Reverse Voltage
Symbol
Value
Unit
V
30
V
R
MARKING
DIAGRAM
Forward Power Dissipation
P
F
@ T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
3
I
200 Max
−55 to 125
−55 to +150
mA
°C
SOT−23
CASE 318
STYLE 12
F
B6M G
T
J
G
1
2
1
T
stg
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
B6
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BAT54ALT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
BAT54ALT1G
SOT−23
(Pb−Free)
BAT54ALT3
SOT−23
10,000/Tape & Reel
10,000/Tape & Reel
BAT54ALT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005 − Rev. 8
BAT54ALT1/D
BAT54ALT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
30
−
−
V
(BR)R
(I = 10 mA)
R
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
−
−
−
−
−
−
−
−
7.6
0.5
10
2.0
pF
mAdc
Vdc
Vdc
Vdc
ns
T
Reverse Leakage
(V = 25 V)
R
I
R
Forward Voltage
(I = 0.1 mAdc)
F
V
V
V
0.22
0.41
0.52
−
0.24
0.5
F
F
F
Forward Voltage
(I = 30 mAdc)
F
Forward Voltage
(I = 100 mAdc)
F
0.8
Reverse Recovery Time
t
5.0
rr
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)
R(REC)
F
R
Forward Voltage
(I = 1.0 mAdc)
F
V
V
0.29
0.35
0.32
0.40
Vdc
Vdc
F
F
Forward Voltage
(I = 10 mAdc)
F
Forward Current (DC)
I
−
−
−
−
−
−
200
300
600
mAdc
mAdc
mAdc
F
Repetitive Peak Forward Current
I
I
FRM
FSM
Non−Repetitive Peak Forward Current
(t < 1.0 s)
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2
BAT54ALT1
820 W
+10 V
2 k
0.1 mF
I
F
t
t
T
r
p
I
F
100 mH
t
T
10%
90%
rr
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
T = 150°C
A
125°C
85°C
100
10
T = 125°C
A
10
1.0
0.1
1.0
0.1
150°C
T = 85°C
A
25°C
0.01
−40°C
−55°C
T = 25°C
A
0.001
15
25
30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
20
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Total Capacitance
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3
BAT54ALT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
SEE VIEW C
Y14.5M, 1982.
3
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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BAT54ALT1/D
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