BAS21AHT1G_10 [ONSEMI]

Low Leakage Switching Diode; 低漏电开关二极管
BAS21AHT1G_10
型号: BAS21AHT1G_10
厂家: ONSEMI    ONSEMI
描述:

Low Leakage Switching Diode
低漏电开关二极管

二极管 开关
文件: 总3页 (文件大小:128K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS21AHT1G  
Low Leakage  
Switching Diode  
Features  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
LOW LEAKAGE  
SWITCHING DIODE  
MAXIMUM RATINGS  
Symbol  
Rating  
Value  
250  
Unit  
Vdc  
V
Continuous Reverse Voltage  
Repetitive Peak Reverse Voltage  
Peak Forward Current  
R
1
2
CATHODE  
ANODE  
V
250  
Vdc  
RRM  
I
200  
mAdc  
mAdc  
F
I
Peak Forward Surge Current  
625  
FM(surge)  
MARKING  
DIAGRAM  
2
THERMAL CHARACTERISTICS  
Symbol  
Characteristic  
Max  
Unit  
1
P
Total Device Dissipation FR--5 Board,  
200  
mW  
AA M G  
D
SOD--323  
CASE 477  
STYLE 1  
(Note 1)  
T = 25C  
A
G
Derate above 25C  
1.57  
635  
mW/C  
C/W  
R
θ
Thermal Resistance,  
Junction--to--Ambient  
JA  
AA  
M
G
= Device Code  
= Date Code*  
= Pb--Free Package  
T , T  
Junction and Storage Temperature  
Range  
--55 to +150  
C  
J
stg  
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR--5 Minimum Pad  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAS21AHT1G  
SOD--323  
(Pb--Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 -- Rev. 1  
BAS21AHT1/D  
BAS21AHT1G  
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Reverse Voltage Leakage Current  
Symbol  
Min  
Typ  
Max  
Unit  
I
R
(V = 200 Vdc)  
(V = 200 Vdc, T = 150C)  
R
--  
--  
--  
--  
40  
100  
nAdc  
mAdc  
R
J
Reverse Breakdown Voltage  
(I = 100 mAdc)  
BR  
V
250  
--  
--  
Vdc  
mV  
(BR)  
Forward Voltage  
V
C
F
(I = 100 mAdc)  
--  
--  
--  
--  
1000  
1250  
F
(I = 200 mAdc)  
F
Diode Capacitance  
(V = 0, f = 1.0 MHz)  
R
--  
--  
5.0  
pF  
ns  
D
Reverse Recovery Time  
t
--  
50  
--  
rr  
(I = I = 30 mAdc, R = 100 Ω)  
F
R
L
820 Ω  
I
F
+10 V  
t
r
t
p
t
2.0 k  
100 mH  
0.1 mF  
0.1 mF  
I
F
t
rr  
t
10%  
90%  
D.U.T.  
i
= 3.0 mA  
R(REC)  
50 Ω OUTPUT  
PULSE  
GENERATOR  
50 Ω INPUT  
SAMPLING  
OSCILLOSCOPE  
I
R
V
R
OUTPUT PULSE  
(I = I = 30 mA; MEASURED  
INPUT SIGNAL  
F
R
at i  
= 3.0 mA)  
R(REC)  
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 30 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 30 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 1. Recovery Time Equivalent Test Circuit  
7000  
1200  
6000  
T
A
= --55C  
T
A
= 155C  
5000  
1000  
800  
600  
400  
25C  
4000  
3000  
155C  
6
5
4
3
2
1
0
T
A
= 25C  
200  
1
T
A
= --55C  
1
2
5
10  
20  
50  
100 200 300  
1
10  
100  
1000  
FORWARD CURRENT (mA)  
REVERSE VOLTAGE (V)  
Figure 2. Forward Voltage  
Figure 3. Reverse Leakage  
http://onsemi.com  
2
BAS21AHT1G  
PACKAGE DIMENSIONS  
SOD--323  
PLASTIC PACKAGE  
CASE 477--02  
ISSUE H  
H
E
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING  
WITH SOLDER PLATING.  
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
5. DIMENSION L IS MEASURED FROM END OF RADIUS.  
1
E
b
2
MILLIMETERS  
DIM MIN NOM MAX  
0.80  
INCHES  
NOM MAX  
1.00 0.031 0.035 0.040  
0.10 0.000 0.002 0.004  
0.006 REF  
A3  
A
MIN  
A
0.90  
0.05  
A1 0.00  
A3  
0.15 REF  
0.32  
0.12 0.177 0.003 0.005 0.007  
1.70  
1.25  
b
C
D
E
L
0.25  
0.089  
1.60  
1.15  
0.08  
2.30  
0.4 0.010 0.012 0.016  
1.80 0.062 0.066 0.070  
1.35 0.045 0.049 0.053  
0.003  
L
A1  
C
NOTE 5  
NOTE 3  
H
2.50  
2.70 0.090 0.098 0.105  
E
STYLE 1:  
PIN 1. CATHODE  
2. ANODE  
SOLDERING FOOTPRINT*  
0.63  
0.025  
0.83  
0.033  
1.60  
0.063  
2.85  
0.112  
*For additional information on our Pb--Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent  
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,  
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury  
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an  
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800--282--9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81--3--5773--3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada  
Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BAS21AHT1/D  

相关型号:

BAS21AN3

High voltage switching (double) diodes
CYSTEKEC

BAS21AP

DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
MCC

BAS21ARF

225mW SMD Switching Diode
TSC

BAS21ARFG

225mW SMD Switching Diode
TSC

BAS21AVD

250V, 3 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-74, 6 PIN
NXP

BAS21AVD

High-voltage switching diodesProduction
NEXPERIA

BAS21AVD,115

DIODE 250 V, 3 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-74, 6 PIN, Signal Diode
NXP

BAS21AVD,125

DIODE 250 V, 3 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-74, 6 PIN, Signal Diode
NXP

BAS21AVD,135

DIODE ARRAY GP 200V 200MA 6TSOP
ETC

BAS21AVD,165

BAS21AVD - High-voltage switching diodes TSOP 6-Pin
NXP

BAS21AW

High-voltage switching diodes
NXP

BAS21AW

High-voltage switching diodeProduction
NEXPERIA