BAS21AHT1G_10 [ONSEMI]
Low Leakage Switching Diode; 低漏电开关二极管![BAS21AHT1G_10](http://pdffile.icpdf.com/pdf1/p00130/img/icpdf/BAS21_719074_icpdf.jpg)
型号: | BAS21AHT1G_10 |
厂家: | ![]() |
描述: | Low Leakage Switching Diode |
文件: | 总3页 (文件大小:128K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS21AHT1G
Low Leakage
Switching Diode
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
http://onsemi.com
Compliant
LOW LEAKAGE
SWITCHING DIODE
MAXIMUM RATINGS
Symbol
Rating
Value
250
Unit
Vdc
V
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
R
1
2
CATHODE
ANODE
V
250
Vdc
RRM
I
200
mAdc
mAdc
F
I
Peak Forward Surge Current
625
FM(surge)
MARKING
DIAGRAM
2
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
1
P
Total Device Dissipation FR--5 Board,
200
mW
AA M G
D
SOD--323
CASE 477
STYLE 1
(Note 1)
T = 25C
A
G
Derate above 25C
1.57
635
mW/C
C/W
R
θ
Thermal Resistance,
Junction--to--Ambient
JA
AA
M
G
= Device Code
= Date Code*
= Pb--Free Package
T , T
Junction and Storage Temperature
Range
--55 to +150
C
J
stg
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BAS21AHT1G
SOD--323
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 -- Rev. 1
BAS21AHT1/D
BAS21AHT1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
Symbol
Min
Typ
Max
Unit
I
R
(V = 200 Vdc)
(V = 200 Vdc, T = 150C)
R
--
--
--
--
40
100
nAdc
mAdc
R
J
Reverse Breakdown Voltage
(I = 100 mAdc)
BR
V
250
--
--
Vdc
mV
(BR)
Forward Voltage
V
C
F
(I = 100 mAdc)
--
--
--
--
1000
1250
F
(I = 200 mAdc)
F
Diode Capacitance
(V = 0, f = 1.0 MHz)
R
--
--
5.0
pF
ns
D
Reverse Recovery Time
t
--
50
--
rr
(I = I = 30 mAdc, R = 100 Ω)
F
R
L
820 Ω
I
F
+10 V
t
r
t
p
t
2.0 k
100 mH
0.1 mF
0.1 mF
I
F
t
rr
t
10%
90%
D.U.T.
i
= 3.0 mA
R(REC)
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
(I = I = 30 mA; MEASURED
INPUT SIGNAL
F
R
at i
= 3.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 30 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 30 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
7000
1200
6000
T
A
= --55C
T
A
= 155C
5000
1000
800
600
400
25C
4000
3000
155C
6
5
4
3
2
1
0
T
A
= 25C
200
1
T
A
= --55C
1
2
5
10
20
50
100 200 300
1
10
100
1000
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
http://onsemi.com
2
BAS21AHT1G
PACKAGE DIMENSIONS
SOD--323
PLASTIC PACKAGE
CASE 477--02
ISSUE H
H
E
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
1
E
b
2
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.00 0.031 0.035 0.040
0.10 0.000 0.002 0.004
0.006 REF
A3
A
MIN
A
0.90
0.05
A1 0.00
A3
0.15 REF
0.32
0.12 0.177 0.003 0.005 0.007
1.70
1.25
b
C
D
E
L
0.25
0.089
1.60
1.15
0.08
2.30
0.4 0.010 0.012 0.016
1.80 0.062 0.066 0.070
1.35 0.045 0.049 0.053
0.003
L
A1
C
NOTE 5
NOTE 3
H
2.50
2.70 0.090 0.098 0.105
E
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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BAS21AHT1/D
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