BAS21AN3 [CYSTEKEC]
High voltage switching (double) diodes;
| 型号： | BAS21AN3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High voltage switching (double) diodes |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 1/7
CYStech Electronics Corp.
High voltage switching (double) diodes
BAS21/A/C/SN3
Description
High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
•Fast switching speed
•Low forward voltage drop
•Pb-free lead plating and halogen-free package
Mechanical Data
•Case : SOT-23, molded plastic
•Terminals : Solderable per MIL-STD-202 Method 208
•Weight : 0.008 grams(approx.)
Pinning
Pin
Outline
Description
SOT-23
BAS21
BAS21A
BAS21C
BAS21S
A1
K2
K1,A1
A
NC
K
K1
K2
A1
A2
1
2
3
3
A1,A2
K1,K2
2
1
Marking:
(1) BAS21
(3)BAS21C
(2)BAS21A
Type
Marking Code
BAS21N3
BAS21AN3
BAS21CN3
BAS21SN3
JS
JS2
JS3
JS4
(4)BAS21S
Diode configuration and symbol
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
Parameter
Symbol
VRRM
VRWM
VR
Limits
250
unit
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ tp=1μs
@ tp=100μs
IFM
IO
400
200
9
mA
mA
IFSM
3
A
@ tp=1s
1.7
Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
IFRM
PD
RθJA
TJ
625
250
500
mA
mW
°C/W
°C
-65~+150
-65~+150
TSTG
°C
Characteristics (Ta=25°C)
Characteristic
Symbol
Condition
IR=100μA
Min.
Max.
Unit
Reverse Breakdown Voltage
VBR
250
-
1
V
V
IF=100mA
IF=200mA
VR=200V
-
-
-
-
-
Forward Voltage (Note)
VF
IR
1.25
100
100
5
V
nA
μA
pF
Reverse Leakage Current
VR=200V, Tj=150°C
VR=0V, f=1MHz
Diode Capacitance
CD
trr
IF=IR=30mA RL=100Ω
measured at IR=3mA
Reverse Recovery Time
-
50
ns
Note: Pulse test, tp=300μs, duty cycle<2%.
Ordering Information
Device
Package
SOT-23
Shipping
Marking
JS
BAS21N3-0-T1-G
BAS21AN3-0-T1-G
JS2
(Pb-free lead plating and 3000 pcs / Tape & Reel
halogen-free package)
BAS21CN3-0-T1-G
BAS21SN3-0-T1-G
JS3
JS4
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Reverse Leakage Current vs Reverse Voltage
Forward Current vs Forward Voltage
1000
100
10
150°C
Pulse
width=300μs
125℃
100
100℃
75℃
150°C
1
125°C
10
1
0.1
100°C
75°C
25°C
25℃
0.01
0.001
0.1
0
0.3
0.6
0.9
1.2
1.5
0
50
100
150
200
250
Forward Voltage---VF(V)
Reverse Voltage---VR(V)
Power Derating Curve
Junction Capacitance vs Reverse Voltage
Tj=25℃, f=1.0MHz
250
200
150
100
50
10
1
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
Reverse Voltage---V (V)
Ambient Temperature ---TA(℃ )
R
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Maximum Permissible Non-repetitive Peak Forward Surge Current
10
9
8
7
6
5
4
3
2
1
0
0.001
0.01
0.1
1
10
Pulse Duration---tp(ms)
Recommended Soldering Footprint
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 5/7
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 6/7
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAS21/A/C/SN3
CYStek Product Specification
Spec. No. : C335N3
Issued Date : 2009.04.07
Revised Date : 2014.02.24
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Diagram:
Marking:
XXX
3-Lead SOT-23 Plastic Surface Mounted
Package.
CYStek Package Code: N3
• BAS21 N3 : Single Diode
(Marking Code JS)
• BAS21AN3 : Common Anode. (Marking Code JS2)
• BAS21CN3 : Common Cathode. (Marking Code JS3)
• BAS21SN3 : Series Connected. (Marking Code JS4)
Inches
Min. Max.
Millimeters
Inches
Millimeters
DIM
DIM
Min.
Max.
3.04
1.70
1.30
0.50
2.30
0.10
Min.
Max.
Min.
Max.
0.20
0.67
1.15
2.95
0.65
0.50
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
0.08
0.30
0.85
2.10
0.25
0.30
L1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAS21/A/C/SN3
CYStek Product Specification
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