BAS21ARFG [TSC]
225mW SMD Switching Diode; 为225mW SMD开关二极管
| 型号： | BAS21ARFG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 225mW SMD Switching Diode |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS21 / A / C / S
225mW SMD Switching Diode
Small Signal Diode
SOT-23
A
F
Features
Fast switching speed
B
E
Surface device type mounting
Moisture sensitivity level 1
C
G
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
Min
Max
Mechanical Data
Case :SOT-23 small outline plastic package
A
B
C
D
E
F
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.043
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : JS,JS2,JS3,JS4
G
0.550 REF
0.022 REF
Pin Configuration
BAS21
BAS21A
BAS21C
BAS21S
Ordering Information
Suggested PAD Layout
Part No.
BAS21 RF
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packing
Marking
JS
0.95
0.037
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
BAS21A RF
BAS21C RF
BAS21S RF
BAS21 RFG
BAS21A RFG
BAS21C RFG
BAS21S RFG
JS2
JS3
JS4
JS
2.0
0.079
0.9
0.035
JS2
JS3
JS4
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
225
Units
mW
V
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
VRRM
IFRM
250
625
mA
mA
A
IO
200
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
IFSM
1
RθJA
TJ, TSTG
500
°C/W
°C
-55 to + 150
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : C10
BAS21 / A / C / S
225mW SMD Switching Diode
Small Signal Diode
Electrical Characteristics
Electrical Characteristics
Type Number
Symbol
Min
Max
-
Units
V
Reverse Breakdown Voltage
IR=
IF=
100μA
100mA
200mA
200V
V(BR)
250
-
-
-
-
-
1.00
1.25
0.1
5
V
Forward Voltage
VF
IF=
V
VR=
IR
μA
pF
ns
Reverse Leakage Current
Junction Capacitance
VR=1V,
f=1.0MHz
CJ
Trr
Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA
50.0
Tape & Reel specification
TSC label
Item
Symbol
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
Carrier width
A
B
Top Cover Tape
Carrier length
Carrier depth
C
Sprocket hole
d
Carieer Tape
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
D
D1
D2
E
55 Min
Any Additional Label (If Required)
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
P0
d
P1
F
T
E
P0
P1
T
A
F
W
C
B
W
W1
Reel width
W1
D
D2
D1
Direction of Feed
Version : C10
BAS21 / A / C / S
225mW SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Reverse Current vs Junction Temperature
FIG 1 Typical Forward Characteristics
100
10
1000
100
10
Ta=25oC
VR=200V
1
1
0.1
0.01
0.1
0.01
0.3 0.6 0.9 1.2 1.5
0
1.8
2.1
0
40
80
120
160
200
TJ,Junction Temperature (°C)
Inataneous Forward Voltage (V)
FIG 3 Admissible Power Dissipation Curve
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
Ambient Temperature (°C)
Version : C10
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