AFGHL50T65RQDN [ONSEMI]
IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified;
| 型号： | AFGHL50T65RQDN |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified 双极性晶体管 |
| 文件： | 总9页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT for Automotive
Application
650 V, 50 A
50 A, 650 V,
CE(Sat) = 1.6 V (Typ.)
V
C
AFGHL50T65RQDN
Using novel field stop IGBT technology, onsemi’s new series of
th
field stop 4 generation IGBTs offer the optimum performance for
G
solar inverter, UPS, welder, telecom, ESS and PFC applications where
low conduction and switching losses are essential.
E
Features
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 50 A
C
• 100% of the Parts Tested for I (Note 2)
CE(Sat)
LM
TO−247−3L
CASE 340CX
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant
MARKING DIAGRAM
Typical Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
AYWWZZ
AFGHL50
T65RQDN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector−to−Emitter Voltage
V
CES
V
GES
650
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
V
Collector Current (Note 1)
I
A
C
A
WW
Y
= Assembly Site
@ T = 25°C
78
50
C
= Work Week Number
= Year of Production,
Last Number
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1)
I
200
200
A
A
A
LM
I
CM
ZZ
= Assembly Lot Number
I
AFGHL50T65RQDN= Specific Device Code
F
@ T = 25°C
54
40
C
@ T = 100°C
C
Pulsed Diode Maximum Forward Current
I
I
160
A
A
FM
ORDERING INFORMATION
Non−Repetitive Forward Surge Current
FM
(Half−Sine Pulse, tp = 8.3 ms, T = 25°C)
160
140
C
Device
Package
Shipping
(Half−Sine Pulse, tp = 8.3 ms, T = 50°C)
C
AFGHL50T65RQDN
TO−247−3L 30 Units / Rail
(Pb−Free)
Short Circuit Withstand Time
t
ms
SC
V
= 15 V, V = 400 V, T ≤ 150°C
5
GE
CC
J
Maximum Power Dissipation
P
D
W
@ T = 25°C
346
173
C
@ T = 100°C
C
Operating Junction/Storage
Temperature Range
T , T
−55 to +175
°C
°C
J
STG
Maximum Lead Temp. for Soldering Purpos-
es, 1/8″ from case for 5 s
T
L
265
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limited by bond wire.
2. V = 600 V, V = 15 V, I = 200 A, R = 9 W, Inductive Load, 100% Tested.
CC
GE
C
G
3. Repetitive Rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2021 − Rev. 2
AFGHL50T65RQDN/D
AFGHL50T65RQDN
THERMAL CHARACTERISTICS
Rating
Symbol
Min
Typ
0.33
0.82
−
Max
0.43
1.06
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
−
−
−
°C/W
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
V
GE
C
Temperature Coefficient of
Breakdown Voltage
= 0 V, I = 1 mA
−
0.6
V/°C
GE
C
DBV
CES
DT
J
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
= 0 V, V = V
I
−
−
−
−
30
mA
GE
CE
CES
CES
Gate Leakage Current,
Collector−emitter Short−circuited
V
GE
= V
, V = 0 V
CE
I
400
nA
GES
GES
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 50 mA
V
GE(th)
3.2
5.0
6.0
V
V
GE
CE
C
V
GE
= 15 V, I = 50 A, T = 25°C
= 15 V, I = 50 A, T = 175°C
V
CE(sat)
−
−
1.6
1.9
1.81
−
GE
C
J
V
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
−
2533
81
−
−
−
−
−
−
−
pF
CE
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Resistance
C
11
res
f = 1 MHz
R
15.06
65
W
g
Gate Charge Total
V
CC
= 400 V, I = 50 A, V = 15 V
Q
nC
C
GE
g
Gate−Emitter Charge
Gate−Collector Charge
Q
19
ge
gc
Q
18
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25°C, V = 400 V,
t
d(on)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
38
23
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
= 25 A, R = 2.5 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
t
78
d(off)
t
f
82
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
1.14
0.411
1.58
41
mJ
ns
E
ts
T = 25°C, V = 400 V,
t
t
J
C
GE
CC
G
d(on)
I
= 50 A, R = 2.5 W,
t
r
40
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
76
d(off)
t
f
64
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
3.09
0.83
3.92
mJ
E
ts
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2
AFGHL50T65RQDN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 175°C, V = 400 V,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
38
27
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
d(on)
= 25 A, R = 2.5 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
92
d(off)
t
f
165
1.26
0.99
2.26
45
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T = 175°C, V = 400 V,
t
t
J
C
GE
CC
G
d(on)
I
= 50 A, R = 2.5 W,
t
r
46
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
86
d(off)
t
f
133
3.5
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
mJ
V
1.84
5.34
E
ts
I = 40 A, T = 25°C
V
F
−
−
1.65
1.7
2.20
F
J
I = 40 A, T = 175°C
−
F
J
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Reverse Recovery Energy
I = 40 A, dl /dt = 1000 A/ms
E
rec
−
−
−
−
−
−
43
57
−
−
−
−
−
−
mJ
nS
nC
mJ
F
F
V
= 400 V, T = 25°C
R
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
589
215
118
1552
rr
I = 40 A, dl /dt = 1000 A/ms
E
rec
F
F
V
R
= 400 V, T = 175°C
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
nS
nC
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGHL50T65RQDN
TYPICAL CHARACTERISTICS
200
150
100
50
200
20 V
T = 175°C
J
T = 25°C
J
15 V
20 V
15 V
150
100
50
12 V
10 V
12 V
10 V
V
GE
= 8 V
V
GE
= 8 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
150
100
50
150
100
50
T = 25°C
J
V
GE
= 15 V
Common Emitter
V
CE
= 20 V
T = 25°C
J
T = 175°C
J
T = 175°C
J
0
0
0
1
2
3
4
5
0
2
4
6
8
10
12
V
GE
, Gate−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Typical Transfer Characteristics
3.5
3
100000
10000
1000
100
10
Common Emitter
= 15 V
C
V
iss
GE
I
= 100 A
C
2.5
2
C
oss
I
I
= 50 A
= 25 A
C
C
C
rss
1.5
f = 1 MHz
= 0 V
1
V
GE
0.1
1
−100
−50
0
50
100
150
200
0.1
1
10 30
T , Collector−Emitter Case Temperature (5C)
C
V
CE
, Collector−to−Emitter Voltage (V)
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Capacitance Characteristics
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4
AFGHL50T65RQDN
TYPICAL CHARACTERISTICS (Continued)
200
300
100
10 ms
t
d(on)
100 ms
100
DC
10
1
10 ms
t
r
1 ms
Notes:
1. T = 25°C
V
= 400 V, V = 15 V
CC GE
= 50 A
I
C
10
C
0
2. T = 175°C
T = 25°C
J
J
3. Single Pulse
T = 175°C
J
0.1
1
10
100
1000
0
0
0
10
20
30
40
50
150
50
V
, Collector−Emitter Voltage (V)
CE
R , Gate Resistance (W)
G
Figure 7. SOA Characteristics
Figure 8. Turn−on Characteristics vs.
Gate Resistance
1000
100
10
200
100
V
= 400 V, V = 15 V
GE
CC
t
r
I
C
= 50 A
T = 25°C
T = 175°C
t
J
d(off)
J
t
d(on)
V
= 400 V, V = 15 V
GE
= 50 A
T = 25°C
T = 175°C
CC
I
C
t
f
J
J
10
0
10
20
30
40
50
30
60
90
120
R , Gate Resistance (W)
G
I , Collector Current (A)
C
Figure 9. Turn−off Characteristics vs.
Figure 10. Turn−on Characteristics vs.
Gate Resistance
Collector Current
500
100
10
5
T = 25°C
T = 175°C
J
E
on
J
t
f
t
d(off)
V
R
= 400 V, V = 15 V
= 2.5 W
T = 25°C
T = 175°C
E
CC
GE
off
G
J
J
V
= 400 V, V = 15 V, I = 50 A
CC
GE
C
10
0.5
10
20
30
40
0
50
100
150
I , Collector Current (A)
C
R , Gate Resistance (W)
G
Figure 11. Turn−off Characteristics vs.
Figure 12. Switching Loss vs. Gate Resistance
Collector Current
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5
AFGHL50T65RQDN
TYPICAL CHARACTERISTICS (Continued)
100
10
1
300
V
= 400 V, V = 15 V
GE
= 50 A
CC
T = 25°C
T = 175°C
J
J
I
C
E
on
250
200
150
100
50
T = 25°C
J
T = 175°C
J
E
off
0
0.1
0
1
2
3
4
5
0
50
100
150
V , Forward Voltage (V)
F
I , Collector Current (A)
C
Figure 14. Forward Characteristics
Figure 13. Switching Loss vs. Collector Current
50
40
30
20
10
0
300
250
200
150
100
50
T = 25°C
T = 175°C
J
T = 25°C
J
T = 175°C
J
J
0
100
100
300
500
700
900
1100 1300 1500
300
500
700
900 1100 1300 1500
dI /dt, Diode Current Slope (A/ms)
F
dI /dt, Diode Current Slope (A/ms)
F
Figure 15. Reverse Recovery Current
Figure 16. Reverse Recovery Time
3
2
1
0
T = 25°C
T = 175°C
J
J
100
300
500
700
900
1100 1300 1500
dI /dt, Diode Current Slope (A/ms)
F
Figure 17. Stored Charge
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6
AFGHL50T65RQDN
TYPICAL CHARACTERISTICS (Continued)
0.6
0.1
0.5
0.2
P
DM
0.1
0.05
t
1
t
2
0.02
Duty Factor, D = t / t
1
× Z
2
0.01
Peak T = P
+ T
q
J
DM
JC C
0.01
Single Pulse
R
R
2
1
i:
1
2
3
4
ri[K/W]: 0.01067
0.1059
0.1465
0.09146
t[s]:
−3
1.764E−5 8.974E−5 2.403E−3 1.228E−2
C = t / R
C = t / R
2 2 2
1
1
1
0.001
−5
−4
−2
−1
0
1
10
10
10
10
Rectangular Pulse Duration (s)
10
10
10
Figure 18. Transient Thermal Impedance of IGBT
10
1
0.5
P
DM
0.2
0.1
t
1
0.1
t
2
0.05
0.02
Duty Factor, D = t / t
1
× Z
2
Peak T = P
+ T
q
J
DM
JC C
0.01
R
R
2
Single Pulse
0.01
1
i:
1
2
3
4
ri[K/W]: 0.03124
0.2277
0.3325
0.1964
t[s]:
−3
3.230E−5 9.271E−5 3.987E−3 3.126E−2
C = t / R
C = t / R
2 2 2
1
1
1
0.001
−5
−4
−2
−1
0
1
10
10
10
10
Rectangular Pulse Duration (s)
10
10
10
Figure 19. Transient Thermal Impedance of Diode
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7
AFGHL50T65RQDN
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE O
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8
AFGHL50T65RQDN
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相关型号：
AFGHL50T65SQ
AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT, Stand alone IGBT without co-packed diode
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