AFGHL50T65SQDC [ONSEMI]
混合型 IGBT，650V，50A，场截止 4 沟槽 IGBT，带 SiC-SBD;
| 型号： | AFGHL50T65SQDC |
| 厂家： | 
ONSEMI |
| 描述： | 混合型 IGBT，650V，50A，场截止 4 沟槽 IGBT，带 SiC-SBD 双极性晶体管 |
| 文件： | 总10页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hybrid IGBT, 50ꢀA, 650ꢀV
AFGHL50T65SQDC
th
Using the novel field stop 4 generation IGBT technology and the
th
1.5
generation SiC Schottky Diode technology,
AFGHL50T65SQDC offers the optimum performance with both low
conduction and switching losses for high efficiency operations in
various applications, especially totem pole bridgeless PFC and
Inverter.
www.onsemi.com
Features
50 A, 650 V
CESat = 1.6 V (Typ.)
• AEC−Q101 Qualified
• Maximum Junction Temperature : T = 175°C
V
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
• Fast Switching
= 1.6 V (Typ.) @I = 50 A
C
CE(Sat)
• Tighten Parameter Distribution
G
• No Reverse Recovery/No Forward Recovery
E
Typical Applications
• Automotive
• On & Off Board Chargers
• DC−DC Converters
• PFC
• Industrial Inverter
G
C
MAXIMUM RATINGS
E
TO−247−3L
CASE 340CX
Rating
Symbol Value
Unit
V
Collector to Emitter Voltage
V
CES
GES
650
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
V
20
30
V
MARKING DIAGRAM
Collector Current
@T = 25°C
I
C
100
50
A
C
@T = 100°C
C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
I
200
200
A
A
A
LM
&Y&Z&3&K
AFGHL
I
CM
50T65SQDC
Diode Forward Current
@T = 25°C
@T = 100°C
I
F
40
20
C
C
Pulsed Diode Maximum Forward Current
I
200
A
FM
Maximum Power Dissipation @T = 25°C
P
D
238
119
W
C
@T = 100°C
C
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
Operating Junction
T ,
STG
55 to
+175
°C
°C
J
/ Storage Temperature Range
T
= 2−Digit Lot Traceability Code
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
T
L
300
AFGHL50T65SQDC = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. V = 400 V, V = 15 V, I = 200 A, R = 26 W, Inductive Load,
Device
Package
Shipping
CC
GE
C
G
100% Tested.
AFGHL50T65SQDC TO−247−3L 30 Units / Rail
2. Repetitive Rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2021 − Rev. 3
AFGHL50T65SQDC/D
AFGHL50T65SQDC
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.63
1.55
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of Breakdown
Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector−emitter cut−off current,
gate−emitter short−circuited
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate leakage current, collector−emitter
short−circuited
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 50 mA
V
GE(th)
3.4
4.9
6.4
V
V
GE
CE
C
V
V
= 15 V, I = 50 A
V
CE(sat)
−
−
1.6
1.9
2.1
−
GE
C
= 15 V, I = 50 A,
GE
C
T = 175°C
J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
3098
265
9
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output capacitance
Reverse transfer capacitance
Gate charge total
C
oes
f = 1 MHz
C
res
V
= 400 V,
= 50 V,
Q
94
CE
g
I
C
Gate to emitter charge
Gate to collector charge
SWITCHING CHARACTERISTICS
Turn−on delay time
Rise time
Q
Q
18
ge
gc
V
= 15 V
GE
23
T = 25°C
VCC = 400 V,
IC = 12.5 A
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
17.6
6.4
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
t
r
R
V
= 4.7 W
Turn−off delay time
Fall time
G
t
94.4
14.4
131
96
d(off)
= 15 V
GE
t
Inductive Load
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
mJ
on
off
E
227
19.2
11.2
89.6
6.4
ts
T = 25°C
VCC = 400 V,
IC = 25 A
t
ns
J
d(on)
t
r
R
V
= 4.7 W
G
Turn−off delay time
Fall time
td
(off)
= 15 V
GE
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Eon
Eoff
Ets
311
141
452
mJ
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2
AFGHL50T65SQDC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
SWITCHING CHARACTERISTICS
Turn−on delay time
Rise time
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
T = 175°C
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
16
8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
VCC = 400 V,
IC = 12.5 A
t
r
R
GE
Inductive Load
= 4.7 W
G
Turn−off delay time
Fall time
107.2
53.6
157
193
350
17.6
14.4
99.2
9.6
d(off)
V
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
mJ
E
ts
T = 175°C
t
t
ns
J
d(on)
VCC = 400 V,
IC = 25 A
t
r
R
GE
Inductive Load
= 4.7 W
G
Turn−off delay time
Fall time
d(off)
V
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
Forward voltage
E
on
E
off
350
328
678
mJ
E
ts
I = 20 A
V
F
−
1.45
1.83
1.75
−
V
F
I = 20 A, T = 175°C
F
J
Total Capacitance
V
= 400 V, f = 1 MHz
= 600 V, f = 1 MHz
C
−
−
103
99
−
−
pF
R
R
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGHL50T65SQDC
TYPICAL CHARACTERISTICS
200
150
100
50
200
20 V
15 V
12 V
10 V
20 V
15 V
12 V
10 V
T
C
= 25°C
T
C
= 175°C
150
100
50
V
GE
= 8 V
V
GE
= 8 V
0
0
0
1
2
3
4
5
0
1
2
3
4
CE
5
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics ¨
(TC = 255C)
(TC = 1755C)
100
80
60
40
20
0
200
150
100
50
Common Emitter
V
CE
= 20 V
T
C
T
C
= 25°C
= 175°C
Common Emitter
V
GE
= 15 V
T
C
T
C
= 25°C
= 175°C
0
0
1
2
3
4
5
0
2
4
6
8
10
Collector Current, I [A]
Collector−Emitter Voltage, V [V]
CE
C
Figure 3. Transfer Characteristics
Figure 4. Typical Saturation Voltage
Characteristics
20
16
12
8
5
4
3
2
1
Common Emitter
Common Emitter
V
GE
= 15 V
T
C
= 25°C
100 A
50 A
100 A
I
C
= 25 A
50 A
100
4
I
C
= 20 A
0
−100 −50
0
50
150
200
4
8
12
16
20
Collector−Emitter Case Temperature, T [°C]
Gate−Emitter Voltage, V [V]
C
GE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs. VGE (TC = 255C)
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4
AFGHL50T65SQDC
TYPICAL CHARACTERISTICS (continued)
20
16
12
8
Common Emitter
= 175°C
10000
1000
100
10
T
C
C
ies
C
oes
100 A
50 A
C
res
I
C
= 25 A
Common Emitter
= 0 V, f = 1 MHz
4
V
GE
T
C
= 25°C
0
1
30
4
8
12
16
20
1
10
Collector−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
GE
CE
Figure 7. Saturation Voltage vs. VGE (TC = 1755C)
Figure 8. Capacitance Characteristics
15
200
100
V
CC
= 200 A
t
r
12
9
300 V
400 A
t
d(on)
10
1
6
Common Emitter
V
CC
= 400 V, V = 15 V
GE
I
C
= 50 A
3
Common Emitter
T
C
T
C
= 25°C
= 175°C
T
C
= 25°C
0
0
20
40
60
80
100
5
15
25
35
45 50
Gate Charge, Q [nC]
Gate Resistance, R [W]
G
G
Figure 9. Gate Charge Characteristics (TC = 255C)
Figure 10. Turn−on Characteristics
vs. Gate Resistance
200
100
1000
t
r
t
d(on)
t
d(on)
100
10
10
1
Common Emitter
= 400 V, V = 15 V
Common Emitter
t
r
V
CC
V
= 400 V, V = 15 V
= 4.7 W
= 25°C
GE
CC
GE
I
C
= 50 A
R
G
C
C
T
C
T
C
= 25°C
= 175°C
T
T
= 175°C
5
15
25
35
45 50
0
30
60
90
120
150
Gate Resistance, R [W]
Collector Current, I [A]
G
C
Figure 11. Turn−Off Characteristics vs. Resistance
Figure 12. Turn−On Characteristics
vs. Collector Current
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5
AFGHL50T65SQDC
TYPICAL CHARACTERISTICS (continued)
1000
100
10
5000
t
r
E
on
1000
t
d(on)
E
off
Common Emitter
Common Emitter
V = 400 V, V = 15 V
CC
V
CC
= 400 V, V = 15 V
GE
GE
R
T
T
= 4.7 W
= 25°C
= 175°C
I = 50 A
G
C
C
C
T
C
T
C
= 25°C
= 175°C
1
100
0
30
60
90
120
150
5
15
25
35
45 50
Collector Current, I [A]
Gate Resistance, R [W]
C
G
Figure 13. Turn−Off Characteristics vs. Collector
Figure 14. Switching Loss vs. Gate
Resistance
Current
10000
300
100
E
on
DC
10 ms
100 ms
1 ms
1000
10 ms
10
1
E
off
Common Emitter
*Notes:
1. T = 25°C
100
10
V
= 400 V, V = 15 V
CC
GE
C
R
T
T
= 4.7 W
= 25°C
= 175°C
2. T = 175°C
3. Single Pulse
G
J
C
C
0.1
0
30
60
90
120
150
1
10
100
1000
Collector Current, I [A]
Collector−Emitter Voltage, V [V]
C
CE
Figure 15. Switching Loss vs. Collector Current
Figure 16. SOA Characteristics (FBSOA)
150
50
40
T
C
= 25°C
100
10
1
T
= 75°C
C
T
C
C
= 125°C
= 175°C
30
T
20
10
0
0
1
2
3
4
5
25
50
75
100 125
150
175
Forward Voltage, V [V]
Collector−Emitter Case Temperature, T [°C]
F
C
Figure 18. (Diode) Current Derating
Figure 17. (Diode) Forward Characteristics vs.
(Normal I−V)
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6
AFGHL50T65SQDC
TYPICAL CHARACTERISTICS (continued)
180
150
120
90
60
30
0
25
50
175
75
100 125
150
Collector−Emitter Case Temperature, T [°C]
C
Figure 19. (Diode) Power Derating
10000
1000
100
Common Emitter
V
GE
= 0 V, f = 1 MHz
T
C
= 25°C
10
0,1
1
10
100
650
Collector−Emitter Voltage, V [V]
CE
Figure 20. (Diode) Output Capacitance (Coes) vs.
Reverse Voltage
30
20
10
0
0
100 200 300 400 500 600 650
Collector−Emitter Voltage, V [V]
CE
Figure 21. Output Capacitance Stored Energy
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7
AFGHL50T65SQDC
5
1
0.5
0.2
0.1
P
DM
0.1
t
0.05
0.02
0.01
1
t
2
Duty Factor, D = t / t
Peak T = Pdm × Zthjc + T
1
2
Single Pulse
J
C
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of IGBT
5
1
0.5
0.2
0.1
0.05
0.02
0.1
P
DM
0.01
t
1
t
2
Single Pulse
Duty Factor, D = t / t
1
2
Peak T = Pdm × Zthjc + T
J
C
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 23. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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