AFGHL75T65SQDT [ONSEMI]
AEC 101 Qualified, 650V, 75A Fieldstop 4 trench IGBT;
| 型号： | AFGHL75T65SQDT |
| 厂家： | 
ONSEMI |
| 描述： | AEC 101 Qualified, 650V, 75A Fieldstop 4 trench IGBT 双极性晶体管 |
| 文件： | 总9页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
650 V, 75 A
AFGHL75T65SQDT
Using the novel field stop 4th generation IGBT technology and the
Stealth Diode technology, AFGHL75T65SQDT offers the optimum
performance with both low conduction and switching losses for a high
efficiency operation in various applications, especially totem pole
bridgeless PFC and DCDC block as well.
www.onsemi.com
75 A, 650 V
Features
• AEC−Q101 Qualified
V
CESat = 1.6 V
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 75 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
G
• Fast Switching
• Tight Parameter Distribution
• RoHS Compliant
E
Typical Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
• Totem Pole Bridgeless PFC
G
C
MAXIMUM RATINGS
E
TO−247−3L
CASE 340CX
Rating
Symbol Value
Unit
V
Collector−to−Emitter Voltage
V
CES
V
GES
650
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
V
MARKING DIAGRAM
Collector Current (Note 1)
@ T = 25°C
I
C
80
75
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
300
300
A
A
A
LM
&Y&Z&3&K
AFGHL
I
CM
75T65SQDT
Diode Forward Current
@ T = 25°C
@ T
I
F
80
75
C
C =
100°C
Pulsed Diode Maximum Forward Current
I
300
A
FM(2)
Maximum Power Dissipation @ T = 25°C
P
D
375
188
W
C
@ T = 100°C
C
&Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data Code
Operating Junction
T ,
STG
−55 to
°C
°C
J
/ Storage Temperature Range
T
+175
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
T
L
300
= 2−Digit Lot Traceability Code
AFGHL75T65SQDT = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
ORDERING INFORMATION
2. V = 400 V, V = 15 V, I = 300 A, R = 17 W, Inductive Load
CC
GE
C
G
Device
Package
Shipping
3. Repetitive Rating: pulse width limited by max. Junction temperature
AFGHL75T65SQDT TO−247−3L 30 Units / Rail
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
November, 2019 − Rev. 0
AFGHL75T65SQDT/D
AFGHL75T65SQDT
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.4
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
0.65
40
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of Breakdown
Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector−emitter cut−off current,
gate−emitter short−circuited
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate leakage current, collector−emitter
short−circuited
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 75 mA
V
GE(th)
3.4
4.9
6.4
V
V
GE
CE
C
V
= 15 V, I = 75 A
V
CE(sat)
−
−
1.6
1.95
2.1
−
GE
C
V
GE
= 15 V, I = 75 A, T = 175°C
C
J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
4617
152
13
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output capacitance
C
oes
f = 1 MHz
Reverse transfer capacitance
Gate charge total
C
res
V
= 400 V,
= 75 A,
Q
136
25
CE
g
I
C
Gate−to−emitter charge
Gate−to−collector charge
Q
Q
ge
gc
V
= 15 V
GE
32
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
CC
= 25°C,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V,
t
r
I
= 37.5 A,
C
G
GE
R
= 4.7 W,
Turn−off delay time
Fall time
t
113
8
d(off)
V
= 15 V,
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.77
0.23
1.0
24
mJ
ns
E
ts
T
C
= 25°C,
= 400 V,
= 75 A,
= 4.7 W,
t
t
d(on)
V
CC
C
G
GE
t
r
44
I
R
V
Turn−off delay time
Fall time
106
68
d(off)
= 15 V,
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
2.12
1.14
3.26
mJ
E
ts
www.onsemi.com
2
AFGHL75T65SQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
CC
= 175°C,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
20
19
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V,
t
r
I
= 37.5 A,
C
R
= 4.7 W,
GE
G
Turn−off delay time
Fall time
124
7.7
d(off)
V
= 15 V,
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
1.52
0.43
1.95
24
mJ
ns
E
ts
T
C
= 175°C,
t
t
d(on)
V
= 400 V,
= 75 A,
= 4.7 W,
CC
t
r
45
I
C
R
V
G
Turn−off delay time
Fall time
114
76
d(off)
= 15 V,
GE
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
E
on
E
off
3.32
1.42
4.74
mJ
V
E
ts
Diode Forward Voltage
I = 75 A, T = 25°C
F
V
−
−
−
−
−
−
−
1.65
1.55
150
75
2.1
−
C
FM
I = 75 A, T = 175°C
F
C
Reverse Recovery Energy
I = 75 A, dI /dt = 200 A/s, T = 175°C
E
−
mJ
F
F
C
rec
Diode Reverse Recovery Time
I = 75 A, dI /dt = 200 A/s, T = 25°C
F
T
rr
−
ns
F
C
I = 75 A, dI /dt = 200 A/s, T = 175°C
328
173
2193
−
F
F
C
Diode Reverse Recovery Charge
I = 75 A, dI /dt = 200 A/s, T = 25°C
F
Q
rr
−
nC
F
C
I = 75 A, dI /dt = 200 A/s, T = 175°C
−
F
F
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
AFGHL75T65SQDT
TYPICAL CHARACTERISTICS
300
240
180
120
60
300
20V
15V
TC = 255C
20V
15V
12V
TC = 1755C
12V
10V
240
10V
VGE = 8V
180
120
VGE = 8V
60
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
3.0
300
240
180
120
60
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC
TC
= 255C
= 1755C
150A
2.0
1.0
75A
IC = 40A
0
0
1
2
3
4
5
−100
−50
0
50
100
150
200
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Case Temperature, TC [5C]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
20
16
12
8
Common Emitter
Common Emitter
TC
= 1755C
TC
= 255C
16
12
8
150A
75A
150A
75A
4
4
IC = 40A
I
C = 40A
0
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE (TJ = 255C)
Figure 6. Saturation Voltage vs. VGE (TJ = 1755C)
www.onsemi.com
4
AFGHL75T65SQDT
TYPICAL CHARACTERISTICS (continued)
15
Common Emitter
T C
= 255C
VCC = 200V
10000
1000
100
Cies
300V
400V
12
9
Coes
6
Cres
10
1
3
Common Emitter
VGE = 0V, f = 1Mhz
= 255C
TC
0
0
30
60
90
120
150
1
10
Collector−Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
200
td(off)
tr
100
tf
Common Emitter
td(on)
Common Emitter
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V
IC = 75A
IC = 75A
TC = 255C
TC = 1755C
TC = 255C
TC = 1755C
20
0
10
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, Rg [ W ]
Gate Resistance, Rg [W ]
Figure 9. Turn−On Characteristics
Figure 10. Turn−Off Characteristics
vs. Gate Resistance
vs. Gate Resistance
1000
100
1000
100
10
Common Emitter
VCC = 400V, VGE = 15V,
RG = 4.7 W
TC
TC
= 255C
td(off)
= 1755C
tr
tf
td(on)
10
1
Common Emitter
VCC = 400V, VGE = 15V,
RG = 4.7 W
TC
TC
= 255C
= 1755C
1
0
30
60
90
120
150
0
30
60
90
120
150
Collector Current, IC [A]
Collector Current, I C [A]
Figure 11. Turn−On Characteristics
Figure 12. Turn−Off Characteristics
vs. Collector Current
vs. Collector Current
www.onsemi.com
5
AFGHL75T65SQDT
TYPICAL CHARACTERISTICS (continued)
10000
10000
Eon
Eon
1000
Eoff
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
RG = 4.7 W
IC = 75A
T C
= 255C
T
C = 255C
T C
= 1755C
T
C = 1755C
Eoff
100
1000
0
30
60
90
120
150
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, Rg [ W ]
Figure 13. Switching Loss vs. Gate Resistance
500
Figure 14. Switching Loss vs. Collector
Current
300
100
DC
10ms
100
10
1
100ms
1ms
10ms
TC=175 5C
TC =25
5C
10
*Notes:
1. TC
2. TJ
TC =75 5C
Common Emitter
= 255C
TC = 255C
TC = 755C
TC = 1755C
= 1755C
3. Single Pulse
0.1
1
1
10
100
1000
0
1
2
3
4
5
Collector − Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
Figure 15. SOA Characteristics
Figure 16. Forward Characteristics
500
400
300
200
100
0
20
16
12
8
T C = 255C
T
C = 255C
= 1755C
T C
T
C = 1755C
di/dt = 200A/uS
di/dt = 100A/uS
di/dt = 200A/uS
di/dt = 100A/uS
di/dt = 200A/uS
di/dt = 100A/uS
4
0
0
20
40
60
80
0
20
40
60
80
Forward Current, VF [V]
Forward Current, VF [V]
Figure 18. Reverse Recovery Time Stored Charge
Figure 17. Reverse Recovery Current
www.onsemi.com
6
AFGHL75T65SQDT
TYPICAL CHARACTERISTICS (continued)
2500
TC
= 255C
TC = 1755C
2000
1500
1000
500
0
di/dt = 200A/uS
di/dt = 100A/uS
0
20
40
60
80
Forward Current, V [V]
F
Figure 19. Stored Charge
1
0.5
0.2
0.1
0.1
PDM
0.05
0.02
t1
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tc
j
0.01
10−5
Single Pulse
10−4
0.01
10−3
10−2
10 −1
10 0
10 1
Rectangular Pulse Duration [sec]
Figure 20. Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t1
Single Pulse
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tc
j
0.001
10−5
10−4
10−3
10−2
10 −1
10 0
10 1
0.00001
1
10
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of Diode
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
AFHA
This precision optical performance oval LED is specifically designed for passenger information signs
EVERLIGHT
AFIC10275GNR1
Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V
NXP
AFIC10275NR1
Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V
NXP
©2020 ICPDF网 联系我们和版权申明