2SD1247S-AE [ONSEMI]
2SD1247S-AE;
| 型号： | 2SD1247S-AE |
| 厂家： | 
ONSEMI |
| 描述： | 2SD1247S-AE |
| 文件： | 总3页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
Package Dimensions
unit:mm
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
2006B
[2SB927/2SD1247]
6.0
5.0
Features
4.7
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
0.5
0.6
0.5
0.5
2
3
1
1 : Emitter
2 : Collector
3 : Base
( ) : 2SB927
1.45
1.45
SANYO : MP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
(–)30
(–)25
V
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CEO
V
(–)6
V
EBO
I
(–)2.5
(–)5
A
C
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
I
A
CP
P
C
Tj
1.0
W
˚C
˚C
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
I
V
V
V
V
V
V
=(–)20V, I =0
(–)0.1
(–)0.1
560*
µA
µA
CBO
CB
EB
CE
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
I
=(–)4V, I =0
EBO
C
h
1
=(–)2V, I =(–)0.1A
100*
65
FE
C
h
2
=(–)2V, I =(–)1.5A
130
FE
C
Gain-Bandwidth Product
f
=(–)10V, I =(–)50mA
150
MHz
pF
T
C
Common Base Output Capacitance
C
=(–)10V, f=1MHz
19(32)
ob
* : The 2SB927/2SD1247 are classified by 0.1A h as follows :
Continued on next page.
FE
Rank
R
S
T
U
h
100 to 200 140 to 280 200 to 400 280 to 560
FE
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3
2SB927/2SD1247
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
0.4
0.18
V
V
V
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
V
I
I
=(–)1.5A, I =(–)75mA
CE(sat)
BE(sat)
C
B
(–0.35) (–0.6)
0.85 1.2
V
=(–)1.5A, I =(–)75mA
C
B
I
-- V
I
-- V
C
CE
C
CE
--2.0
--1.6
--1.2
--0.8
2.0
2SB927
From top
--200mA
--150mA
--100mA
--50mA
2SD1247
1.6
1.2
0.8
--40mA
--30mA
--4mA
--2mA
4mA
--0.4
0
0.4
0
2mA
I =0
B
I =0
B
0
--200
--400
--600
--800
--1000
0
200
400
600
800
1000
Collector-to-Emitter Voltage, V
CE
– mV
Collector-to-Emitter Voltage, V – mV
ITR08789
CE
ITR08788
I
-- V
h
-- I
C
BE
FE C
3.2
2.8
2.4
2.0
1.6
1.2
0.8
1000
V
=2V
V
=2V
CE
CE
7
5
3
2
2SD1247
100
7
5
3
2
10
0.4
0
(For PNP, minus sign is
omitted.)
7
5
(For PNP, minus sign is omitted.)
2
3
5
2
3
5
2
3
5
0
0.2
0.4
0.6
0.8
1.0
– V
1.2
0.01
0.1
1.0
10
Base-to-Emitter Voltage, V
BE
Collector Current, I – A
ITR08790
ITR08791
C
f
-- I
Cob -- V
T
C
CB
1000
100
V
=10V
f=1MHz
CE
7
5
7
3
2
5
2SD1247
100
3
2
7
5
3
2
(For PNP, minus sign is omitted.)
(For PNP, minus sign is omitted.)
10
10
1.0
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
10
100
1000
10
Collector-to-Base Voltage, V
-- V
ITR08793
Collector Current, I – mA
ITR08792
CB
C
No.1029–2/3
2SB927/2SD1247
V
(sat) -- I
CE
P
-- Ta
C
C
3
2
1200
2SB927 / 2SD1247
I
C
/ I =20
B
1000
800
600
400
1.0
7
5
3
2
0.1
7
5
3
2
200
0
(For PNP, minus sign is omitted.)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
180
Collector Current, I – m1A.0
Ambient Temperature, Ta – ˚C
0.1
C
ITR08794
ITR08795
A S O
10
I =5A
CP
5
3
2
I =2.5A
C
1.0
5
3
2
0.1
2SB927 / 2SD1247
(For PNP, minus sign is omitted.)
1ms to 100ms : Single pulse
Ta=25°C
5
3
2
2
3
5
7
2
3
5
7
2
3
5
1.0
Collector-to-Emitter Voltage, V10 – V ITR08796
CE
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.1029–3/3
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