2SD1249A [PANASONIC]
Silicon NPN triple diffusion planar type(For low-freauency power amplification); 硅NPN三重扩散平面型（对于低freauency功率放大）
| 型号： | 2SD1249A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For low-freauency power amplification) |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1249, 2SD1249A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
1.0±0.1
Features
High collector to base voltage VCBO
■
●
1.5max.
1.1max.
0.5max.
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
0.8±0.1
2.54±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
5.08±0.5
1:Base
Parameter
Symbol
Ratings
Unit
1
2
3
2:Collector
3:Emitter
N Type Package
Collector to
2SD1249
2SD1249A
2SD1249
350
400
VCBO
V
base voltage
Collector to
Unit: mm
8.5±0.2
6.0±0.3
3.4±0.3
250
VCEO
V
1.0±0.1
emitter voltage 2SD1249A
Emitter to base voltage
Peak collector current
Collector current
300
VEBO
ICP
5
V
A
A
1.5
IC
0.75
35
R0.5
R0.5
Collector power TC=25°C
0.8±0.1
0 to 0.4
PC
W
2.54±0.3
1.1 max.
dissipation
Ta=25°C
1.3
5.08±0.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICES
Conditions
min
typ
max
Unit
2SD1249
2SD1249A
2SD1249
2SD1249A
VCE = 350V, VBE = 0
1
1
1
1
1
mA
current
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
mA
mA
V
Emitter cutoff current
Collector to emitter 2SD1249
voltage 2SD1249A
250
300
40
IC = 30mA, IB = 0
*
hFE1
VCE = 10V, IC = 0.3A
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
V
CE = 10V, IC = 1A
10
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
1.5
1
V
V
Collector to emitter saturation voltage VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
V
CE = 10V, IC = 0.2A, f = 10MHz
30
0.5
2
MHz
µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
µs
0.5
µs
*hFE1 Rank classification
Rank
hFE1
R
Q
P
40 to 90
70 to 150
120 to 250
1
Power Transistors
2SD1249, 2SD1249A
PC — Ta
IC — VCE
IC — VBE
50
1.2
1.0
0.8
0.6
0.4
0.2
0
4.0
TC=25˚C
VCE=10V
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
40
30
20
10
0
3.2
2.4
1.6
0.8
0
25˚C
TC=100˚C
(1)
–25˚C
IB=14mA
12mA
10mA
8mA
6mA
4mA
2mA
(2)
(3)
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
10000
1000
VCE=10V
VCE=10V
IC/IB=10
f=10MHz
TC=25˚C
10
3000
300
100
TC=100˚C
3
1
1000
300
100
30
10
TC=100˚C
25˚C
0.3
0.1
–25˚C
25˚C
30
10
3
1
–25˚C
0.03
0.01
3
1
0.3
0.1
0.01
0.03
0.1
0.3
1
3
0.01 0.03
0.1
0.3
1
3
10
0.001 0.003 0.01 0.03
0.1
0.3
1
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
3
1
ICP
t=10ms
1ms
IC
1
0.3
0.1
300ms
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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