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2SD1250 [TYSEMI]

High forward current transfer ratio hFE which has satisfactory linearity; 高正向电流传输比的hFE有良好的线性
2SD1250
型号： 2SD1250
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

High forward current transfer ratio hFE which has satisfactory linearity
高正向电流传输比的hFE有良好的线性
文件： 总1页 (文件大小：123K)
中文：  中文翻译
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Product specification  
2SD1250  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector-emitter saturation voltage VCE(sat)  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
-0.1  
1 Base  
4.60+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
200  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
150  
V
6
V
2
A
Peak collector current  
Collector power dissipation  
ICP  
3
1.3  
W
W
PC  
30  
TC = 25  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
IC = 500 ìA, IE = 0  
IC =5 mA, IB = 0  
200  
150  
6
V
IE = 500 ìA, IC = 0  
VCB = 200 V, IE = 0  
VEB = 4 V, IC = 0  
V
50  
50  
ìA  
ìA  
IEBO  
VCE = 10 V, IC = 150 mA  
VCE = 10 V, IC = 400 mA  
VCE = 10 V, IC = 400 mA  
IC = 500 mA, IB = 50 mA  
60  
50  
240  
Forward current transfer ratio  
hFE  
Base-emitter voltage  
VBE  
VCE(sat)  
fT  
1.0  
1.0  
V
V
Collector-emitter saturation voltage  
Transition frequency  
20  
MHz  
VCE = 10 V, IC = 0.5 A, f = 1 MHz  
hFE Classification  
Rank  
hFE  
Q
P
60 to 140  
100 to 240  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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