2SD1249/2SD1249A [ETC]

2SD1249. 2SD1249A - NPN Transistor ; 2SD1249 。 2SD1249A - NPN晶体管\n


型号：	2SD1249/2SD1249A
厂家：	ETC
描述：	2SD1249. 2SD1249A - NPN Transistor 2SD1249 。 2SD1249A - NPN晶体管\n 晶体晶体管
文件：	总3页 (文件大小：55K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistors

2SD1249, 2SD1249A

Silicon NPN triple diffusion planar type

For low-freauency power amplification

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

1.0±0.1

Features

High collector to base voltage V_CBO

■

●

1.5max.

1.1max.

0.5max.

●

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

0.8±0.1

2.54±0.3

Absolute Maximum Ratings (T =25˚C)

■

5.08±0.5

1:Base

Parameter

Symbol

Ratings

Unit

2:Collector

3:Emitter

N Type Package

Collector to

2SD1249

2SD1249A

2SD1249

350

400

V_CBO

base voltage

Collector to

Unit: mm

8.5±0.2

6.0±0.3

3.4±0.3

250

V_CEO

1.0±0.1

emitter voltage 2SD1249A

Emitter to base voltage

Peak collector current

Collector current

300

V_EBO

I_CP

1.5

I_C

0.75

R0.5

Collector power T_C=25°C

0.8±0.1

0 to 0.4

P_C

2.54±0.3

1.1 max.

dissipation

Ta=25°C

1.3

5.08±0.5

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CES

Conditions

min

typ

max

Unit

2SD1249

2SD1249A

2SD1249

2SD1249A

V_CE= 350V, V_BE= 0

current

V_CE= 400V, V_BE= 0

V_CE= 150V, I_B= 0

V_CE= 200V, I_B= 0

V_EB= 5V, I_C= 0

Collector cutoff

current

I_CEO

I_EBO

V_CEO

Emitter cutoff current

Collector to emitter 2SD1249

voltage 2SD1249A

250

300

I_C= 30mA, I_B= 0

h_FE1

V_CE= 10V, I_C= 0.3A

250

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

_CE= 10V, I_C= 1A

V_CE= 10V, I_C= 1A

I_C= 1A, I_B= 0.2A

1.5

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

_CE= 10V, I_C= 0.2A, f = 10MHz

0.5

MHz

µs

I_C= 1A, I_B1= 0.1A, I_B2= – 0.1A,

V_CC= 50V

µs

0.5

µs

^*h_FE1Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

Power Transistors

2SD1249, 2SD1249A

P_C— Ta

I_C— V_CE

I_C— V_BE

1.2

1.0

0.8

0.6

0.4

0.2

4.0

T_C=25˚C

V_CE=10V

(1) T_C=Ta

(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P_C=1.3W)

3.2

2.4

1.6

0.8

25˚C

T_C=100˚C

(1)

–25˚C

I_B=14mA

12mA

10mA

8mA

6mA

4mA

2mA

(2)

(3)

20 40 60 80 100 120 140 160

0.4

0.8

1.2

1.6

2.0

2.4

(

)

( )

Base to emitter voltage V_BEV

Ambient temperature Ta ˚C

Collector to emitter voltage V_CE

V_CE(sat)— I_C

h_FE— I_C

f_T— I_C

10000

1000

V_CE=10V

I_C/I_B=10

f=10MHz

T_C=25˚C

3000

300

100

T_C=100˚C

1000

300

100

T_C=100˚C

25˚C

0.3

0.1

–25˚C

25˚C

–25˚C

0.03

0.01

0.3

0.1

0.01

0.03

0.1

0.3

0.01 0.03

0.1

0.3

0.001 0.003 0.01 0.03

0.1

0.3

( )

Collector current I_CA

Collector current I_C

Area of safe operation (ASO)

R_th(t)— t

100

10³

10²

(1) Without heat sink

(2) With a 50 × 50 × 2mm Al heat sink

Non repetitive pulse

T_C=25˚C

(1)

(2)

I_CP

t=10ms

1ms

I_C

0.3

0.1

300ms

10^–1

10^–2

0.03

0.01

100 300 1000

10^–4

10^–3

10^–2

10^–1

10²

10³

10⁴

( )

Collector to emitter voltage V_CE

Time

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