2SD1065-Q [ONSEMI]
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN;
| 型号： | 2SD1065-Q |
| 厂家： | 
ONSEMI |
| 描述： | Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN825C
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Applications
Package Dimensions
unit:mm
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
2022A
[2SD829/2SD1065]
15.6
14.0
Features
3.2
4.8
2.0
· Low-saturation collector-to-emitter voltage :
V
=–0.5V max.
CE(sat)
· Wide ASO leading to high resistance to breakdown.
1.6
1.0
2.0
0.6
3
2
1
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
( ) : 2SB829
5.45
5.45
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
(–)60
(–)50
(–)6
V
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CEO
V
V
EBO
I
(–)15
(–)20
90
A
C
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
I
A
CP
P
C
Tj
Tc=25˚C
W
˚C
150
˚C
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
I
V
=(–)40V, I =0
(–)0.1
(–)0.1
280*
mA
mA
CBO
CB
EB
CE
CE
CE
E
Emitter Cutoff Current
I
V
V
V
V
=(–)4V, I =0
EBO
C
h
h
1
=(–)2V, I =(–)1A
70*
30
FE
C
DC Current Gain
2
=(–)2V, I =(–)8A
FE
C
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
f
=(–)5V, I =(–)1A
20
(–0.26) (–0.5)
0.18 0.4
MHz
V
T
C
V
I
=(–)8A, I =(–)0.4A
CE(sat)
C
B
V
* : The 2SB829/2SD1065 are classified by 1A h as follows :
Continued on next page.
FE
Rank
Q
R
S
h
70 to 140
100 to 200 140 to 280
FE
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/91098HA (KT)/10996TS (KOTO) 8-3880/4017KI/3145KI No.825–1/4
2SB829/2SD1065
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
V
I
I
=(–)1mA, I =0
(–)60
(–)50
(–)6
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
E
=(–)1mA, R =∞
C
BE
I =(–)1mA, I =0
V
E
C
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
0.2
(0.5)
1.0
µs
µs
µs
µs
on
Fall Time
t
f
Storage Time
t
0.1
stg
Switching Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
1Ω
V
100Ω
B
R
R
10Ω
L
50Ω
+
+
100µF
470µF
V
= --5V
V
=20V
CC
BE
I =10I = --10I =2A
B1 B2
C
(For PNP, the porarity is reversed.)
I
-- V
CE
I
-- V
C CE
C
--20
--18
--16
--14
--12
--10
--8
20
2SB829
2SD1065
18
16
14
12
10
8
--6
6
20mA
--20mA
--4
--2
0
4
2
0
I =0
I =0
B
B
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Collector-to-Emitter Voltage, V
– V
Collector-to-Emitter Voltage, V
– V
ITR08495
ITR08496
CE
CE
I
-- V (on)
BE
I
-- V (on)
C BE
C
--20
--16
--12
--8
20
16
12
8
2SB829
= --2V
2SD1065
V =2V
CE
V
CE
--4
0
4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, V (on) – V
BE
Base-to-Emitter Voltage, V (on) – V
BE
ITR08497
ITR08498
No.825–2/4
2SB829/2SD1065
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SB829
2SD1065
7
7
V
CE
= --2V
V
CE
=2V
5
5
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
2
3
5
3
5
7
2
3
5
7
2
3
5
7
2
3
2
3
5
3
5
7
2
3
5
7
2
3
5
7
2
3
--1.0
--10
0.1
1.0
10
--0.1 Collector Current, I – A
Collector Current, I – A
C
V
ITR08499
ITR08500
C
V
(sat) -- I
(sat) -- I
CE
CE
C
C
10
3
2
2SB829
2SD1065
5
--10
3
2
5
3
2
1.0
--1.0
5
3
2
5
3
2
0.1
--0.1
5
5
3
2
3
2
--0.01
--0.01
0.01
0.01
2
5
2
3
5
2
3
5
2
3
5
2
5
2
3
5
2
3
5
2
3
5
Collector Curr-e-1n.t0, I – A
0C.1ollector Current, I – A
--0.1
--10
1.0
10
ITR08501
ITR08502
C
C
V
(sat) -- I
V
(sat) -- I
BE C
BE
C
--100
100
2SB829
2SD1065
7
5
7
5
3
2
3
2
--10
10
7
5
7
5
3
2
3
2
--1.0
1.0
7
5
7
5
3
3
2
3
7
2
3
5
7
2
3
5
7
2
3
2
3
7
2
3
5
7
2
3
5
7
2
3
--0.1
--1.0
--10
0.1
1.0
10
Collector Current, I – A
Collector Current, I – A
ITR08503
ITR08504
C
C
A S O
A S O
5
5
2SB829
2SD1065
3
2
3
2
I =–20A
CP
I =20A
CP
I =–15A
C
I =15A
C
--10
10
7
5
7
5
3
2
3
2
--1.0
1.0
7
5
7
5
3
2
3
2
--0.1
0.1
5
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
--1.0
--10
--100
ITR08505
1.0
10
100
Collector-to-Emitter Voltage, V – V
ITR08506
CE
Collector-to-Emitter Voltage, V
– V
CE
No.825–3/4
2SB829/2SD1065
P
-- Tc
C
100
90
2SB829 / 2SD1065
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
ITR08507
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.825–4/4
相关型号：
2SD1065-R
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
ONSEMI
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