2SD1069 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SD1069 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1069
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
300
150
6
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
7
A
ICM
15
A
IB
2
A
Collector Power Dissipation
Ta=25℃
1.75
40
PC
W
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
150
-55~150
℃
℃
Storage Ttemperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
IC= 100mA; L= 50mH
IC= 1mA; IE= 0
MIN
150
300
6
TYP. MAX UNIT
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
V
V
V
IE= 0.1A; IC= 0
IC= 5A; IB= 0.5A
IC= 5A; IB= 0.5A
VCE= 250V; VBE= 0
IC= 5A ; VCE= 1.5V
IC= 0.2A; VCE= 10V
IF= 6A
1.5
1.5
1
V
V
VCE
(sat)
VBE
(sat)
ICES
mA
hFE
DC Current Gain
10
fT
Current-Gain—Bandwidth Product
C-E Diode Forward Voltage
Fall Time
18
MHz
V
VECF
1.8
1.0
μs
tf
ICP= 5A; IB1( )= 0.5A
end
isc Website：www.iscsemi.cn
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