2SD1071L-TA3-T [UTC]
Power Bipolar Transistor;
| 型号： | 2SD1071L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor 局域网 放大器 晶体管 |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1071
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE POWER
AMPLIFIER
DESCRIPTION
The UTC 2SD1071 is a high voltage power amplifier, it uses UTC
advanced technology to provide the customers high DC current gain
and low saturation voltage, etc.
The UTC 2SD1071 is suitable for general purpose power amplifier
and Motor controls, etc.
FEATURES
* Low saturation voltage
* High DC current gain
EQUIVALENT CIRCUIT
C
Z-Di
B
Diode
RBE1 RBE2
E
ORDERING INFORMATION
Ordering Number
Lead Free
Package
TO-220
Packing
Tube
Halogen Free
2SD1071G-TA3-T
2SD1071L-TA3-T
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R203-043.b
2SD1071
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
300
300
V
6
V
6
A
Base Current
IB
2.5
A
Collector Dissipation
Junction Temperature
Storage Temperature
PC
40
W
C
C
TJ
+150
-40~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
3
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS (TC =25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICBO
TEST CONDITIONS
ICBO=1mA
MIN TYP MAX UNIT
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
300
300
6
V
V
ICEO=1mA
IEBO=150mA
VCBO=250V
VEBO=6V
V
Collector Cut-Off Current
Emitter Cut-Off Current
0.1 mA
150 mA
IEBO
DC Current Gain
hFE
VCE=2V, IC=4A
500
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT
)
)
1.5
2.0
V
V
IC=4A, IB=15mA
VBE(SAT
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R203-043.b
www.unisonic.com.tw
2SD1071
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R203-043.b
www.unisonic.com.tw
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