2SC5569-TD-E [ONSEMI]
双极晶体管,50V,7A,低 VCE(sat),(PNP)NPN 单 PCP;![2SC5569-TD-E](http://pdffile.icpdf.com/pdf2/p00211/img/icpdf/2SA201_1194251_icpdf.jpg)
型号: | 2SC5569-TD-E |
厂家: | ![]() |
描述: | 双极晶体管,50V,7A,低 VCE(sat),(PNP)NPN 单 PCP PC 开关 晶体管 功率双极晶体管 |
文件: | 总8页 (文件大小:472K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Ordering number : EN6309D
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistor
2SA2016/2SC5569
DC / DC Converter Applications
Applicaitons
•
Relay drivers, lamp drivers, motor drivers, flash
Features
•
•
Adoption of FBET and MBIT processes
Large current capacity
•
•
Low collector-to-emitter saturation voltage
High-speed switching
•
Ultrasmall package facilitales miniaturization in end products
High allowable power dissipation
•
( )2SA2016
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
(-50)100
(-50)100
(--)50
CBO
V
V
CES
V
V
CEO
V
(--)6
V
EBO
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
• Package
: PCP
7008B-003
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA2016-TD-E
2SC5569-TD-E
4.5
1.6
Packing Type: TD
1.5
TD
1
2
3
Marking
0.4
0.5
0.4
1.5
3.0
2SA2016
2SC5569
0.75
Electrical Connection
2
2
1 : Base
2 : Collector
3 : Emitter
1
1
SANYO : PCP
Bottom View
3
3
2SA2016
2SC5569
http://www.sanyosemi.com/en/network/
13013 TKIM/72512 TKIM/62405EA MSIM TB-00001406/52501 TS KT TA-3259
No.6309-1/8
2SA2016 / 2SC5569
Continued from preceding page.
Parameter
Collector Current
Symbol
Conditions
Ratings
Unit
A
I
(--)7
(--)10
(--)1.2
1.3
C
Collector Current (Pulse)
Base Current
I
A
CP
I
B
A
When mounted on ceramic substrate (250mm2 0.8mm)
W
W
×
Collector Dissipation
P
C
Tc=25°C
3.5
Junction Temperature
Storage Temperature
Tj
150
C
C
°
°
Tstg
--55 to +150
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=(--)40V, I =0A
(--)0.1
(--)0.1
560
A
A
μ
CBO
CB E
I
V
=(--)4V, I =0A
μ
EBO
EB C
h
V
CE
=(--)2V, I =(--)500mA
200
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=(--)10V, I =(--)500mA
(290)330
(50)28
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
=(--)10V, f=1MHz
V
(sat)1
(sat)2
(sat)
I
C
=(--)3.5A, I =(--)175mA
(--230)160 (--390)240
(--240)110 (--400)170
CE
B
Collector-to-Emitter Saturation Voltage
V
I =(--)2A, I =(--)40mA
C B
CE
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
I
C
=(--)2A, I =(--)40mA
(--)0.83
(--)1.2
BE
B
V
I
C
=(--)10 A, I =0A
(--50)100
(--50)100
(--)50
V
μ
(BR)CBO
E
V
I
C
=(--)100 A, R =0
V
μ
Ω
(BR)CES
BE
V
I
C
=(--)1mA, R =
∞
BE
V
(BR)CEO
V
I =(--)10 A, I =0A
E
(--)6
V
μ
(BR)EBO
C
t
t
t
(40)30
(225)420
25
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
100μF
470μF
V
= --5V
V
=25V
CC
BE
I =20I = --20I =2.5A
B1 B2
C
For PNP, the polarity is reversed.
Ordering Information
Device
Package
Shipping
memo
2SA2016-TD-E
PCP
PCP
1,000pcs./reel
1,000pcs./reel
Pb Free
2SC5569-TD-E
No.6309-2/8
2SA2016 / 2SC5569
I
C
-- V
CE
--90mA
--80mA
--70mA
I -- V
C CE
7
6
--7
--6
2SA2016
--60mA
5
4
3
--5
--4
--3
--10mA
2
1
0
--2
--1
0
I =0mA
I =0mA
B
B
2SC5569
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
0.4
0.8
1.2
1.6
2.0
IT00207
IT00206
Collector-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V
-- V
CE
CE
I
-- V
BE
I
-- V
BE
C
C
8
--8
--7
--6
--5
--4
--3
--2
--1
0
2SA2016
2SC5569
=2V
V
= --2V
V
CE
CE
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT00209
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IT00208
Base-to-Emitter Voltage, V
BE
-- V
Base-to-Emitter Voltage, V
-- V
BE
h
-- I
h
-- I
C
FE
C
FE
1000
1000
2SA2016
= --2V
2SC5569
7
5
7
5
V
V
=2V
CE
CE
Ta=75°C
3
2
3
2
25°C
--25°C
--25°C
100
100
7
5
7
5
3
2
3
2
10
--0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
5 7
10
IT00211
2
3
5
7
2
3
5
7
2
3
5 7
0.1
1.0
--0.1
--1.0
--10
IT00210
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
CE
C
CE
C
--1000
1000
2SA2016
2SC5569
7
5
7
5
I
/ I =20
I
/ I =20
C
B
C
B
3
2
3
2
100
--100
7
5
7
5
3
2
3
2
10
--10
7
5
7
5
3
2
3
2
--1.0
--0.01
1.0
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
IT00212
0.1
1.0
10
IT00214
Collector Current, I -- A
Collector Current, I -- A
C
C
No.6309-3/8
2SA2016 / 2SC5569
V
(sat) -- I
V
(sat) -- I
CE
CE
C
C
10000
--10000
2SC5569
7
5
2SA2016
7
5
I
/ I =50
I
/ I =50
C
B
C
B
3
2
3
2
--1000
1000
7
5
7
5
3
2
3
2
--100
100
7
5
7
5
3
2
3
2
--10
--0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
IT00213
0.1
1.0
10
IT00215
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
BE
C
BE
C
--10000
10000
2SC5569
2SA2016
7
5
7
5
I
/ I =50
I
/ I =50
C
B
C
B
3
2
3
2
--1000
1000
7
5
7
5
3
2
3
2
100
--100
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
IT00217
--0.01
--0.1
--1.0
--10
IT00216
0.01
0.1
1.0
Collector Current, I -- A
Collector Current, I -- A
C
C
Cob -- V
Cob -- V
CB
CB
5
5
2SA2016
f=1MHz
2SC5569
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
7
5
7
5
3
2
3
2
5
7
2
3
5
7
2
3
5
7
2
3
5
5
7
2
3
5
7
2
3
5
7
2
3
5
--0.1
--1.0
--10
0.1
1.0
10
Collector-to-Base Voltage, V
-- V
IT00218
Collector-to-Base Voltage, V
-- V
IT00219
CB
CB
f
-- I
f
-- I
T C
T
C
1000
1000
2SC5569
2SA2016
= --10V
7
5
7
5
V
=10V
V
CE
CE
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
5
7
2
3
5
7
2
3
5
7
2
3
5 7
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.01
0.1
1.0
10
IT00221
--0.01
--0.1
--1.0
--10
IT00220
Collector Current, I -- A
Collector Current, I -- A
C
C
No.6309-4/8
2SA2016 / 2SC5569
P
-- Ta
A S O
C
2
2.0
100ms
2SA2016 / 2SC5569
I
=10A
CP
10
7
5
I =7A
C
3
2
1.5
1.3
1.0
7
5
1.0
3
2
0.1
7
5
0.5
0
2SA2016 / 2SC5569
Tc=25°C
Single pulse
3
2
For PNP, the minus sign is omitted.
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
1.0
10
100
-- V IT00222
Collector-to-Emitter Voltage, V
Ambient Temperature, Ta -- °C
IT00223
CE
P
-- Tc
C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2SA2016 / 2SC5569
0.5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT01535
No.6309-5/8
2SA2016 / 2SC5569
Bag Packing Specification
2SA2016-TD-E, 2SC5569-TD-E
No.6309-6/8
2SA2016 / 2SC5569
Outline Drawing
Land Pattern Example
2SA2016-TD-E, 2SC5569-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
1.0
3.0
1.0
1.5
No.6309-7/8
2SA2016 / 2SC5569
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of January, 2013. Specifications and information herein are subject
to change without notice.
PS No.6309-8/8
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