2N5885 [ONSEMI]
Complementary Silicon High−Power Transistors; 互补硅大功率晶体管
| 型号： | 2N5885 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Silicon High−Power Transistors |
| 文件： | 总6页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
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Features
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTORS
60 − 80 VOLTS, 200 WATTS
• Low Collector−Emitter Saturation Voltage −
V
= 1.0 Vdc, (max) at I = 15 Adc
C
CE(sat)
• Low Leakage Current
= 1.0 mAdc (max) at Rated Voltage
I
CEX
• Excellent DC Current Gain −
= 20 (min) at I = 10 Adc
h
FE
C
• High Current Gain Bandwidth Product −
f = 4.0 MHz (min) at I = 1.0 Adc
t
C
• Pb−Free Packages are Available*
TO−204AA (TO−3)
CASE 1−07
MAXIMUM RATINGS (Note 1)
STYLE 1
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5883, 2N5885
V
Vdc
CEO
MARKING DIAGRAM
60
80
2N5884, 2N5886
Collector−Base Voltage
2N5883, 2N5885
V
Vdc
CB
60
80
2N5884, 2N5886
Emitter−Base Voltage
V
5.0
Vdc
Adc
EB
2N588xG
AYYWW
MEX
Collector Current −
Continuous
Peak
I
C
B
25
50
Base Current
I
7.5
Adc
Total Device Dissipation @ T = 25°C
P
200
1.15
W
W/°C
C
D
Derate above 25°C
2N588x = Device Code
x = 3, 4, 5, or 6
Operating and Storage Junction
Temperature Range
T , T
–65 to +200
°C
J
stg
G
A
YY
WW
MEX
= Pb−Free Package
= Assembly Location
= Year
THERMAL CHARACTERISTICS
Characteristic
= Work Week
Symbol
Max
Unit
= Country of Origin
Thermal Resistance, Junction−to−Case
q
0.875
°C/W
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 11
2N5883/D
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
ELECTRICAL CHARACTERISTICS (Note 2) (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 3)
(I = 200 mAdc, I = 0)
2N5883, 2N5885
2N5884, 2N5886
V
60
80
−
−
Vdc
CEO(sus)
C
B
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
CEO
2N5883, 2N5885
2N5984, 2N5886
−
−
2.0
2.0
mAdc
mAdc
CE
B
(V = 40 Vdc, I = 0)
CE
B
Collector Cutoff Current
I
CEX
(V = 60 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc, T = 150°C)
= 1.5 Vdc, T = 150°C)
2N5883, 2N5885
2N5884, 2N5886
2N5883, 2N5885
2N5884, 2N5886
CE
BE(off)
BE(off)
BE(off)
BE(off)
−
−
−
−
1.0
1.0
10
(V = 80 Vdc, V
CE
(V = 60 Vdc, V
CE
C
C
(V = 80 Vdc, V
CE
10
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
I
CBO
2N5883, 2N5885
2N5884, 2N5886
mAdc
mAdc
CB
E
−
−
1.0
1.0
(V = 80 Vdc, I = 0)
CB
E
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
−
1.0
EB
C
EBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 3.0 Adc, V = 4.0 Vdc)
35
20
−
100
−
C
CE
(I = 10 Adc, V = 4.0 Vdc)
C
CE
(I = 25 Adc, V = 4.0 Vdc)
4.0
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 15 Adc, I = 1.5 Adc)
V
V
CE(sat)
−
−
1.0
4.0
Vdc
C
B
(I = 25 Adc, I = 6.25 Adc)
C
B
Base−Emitter Saturation Voltage (Note 3) (I = 25 Adc, I = 6.25 Adc)
−
−
2.5
1.5
Vdc
Vdc
C
B
BE(sat)
Base−Emitter On Voltage (Note 3) (I = 10 Adc, V = 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4) (I = 1.0 Adc, V = 10 Vdc, f
= 1.0 MHz)
f
4.0
−
MHz
pF
C
CE
test
T
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
2N5883, 2N5884
2N5885, 2N5886
C
−
−
1000
500
ob
CB
E
Small−Signal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f
= 1.0 kHz)
h
fe
20
−
−
C
CE
test
SWITCHING CHARACTERISTICS
Rise Time
t
t
−
0.7
ms
r
(V = 30 Vdc, I = 10 Adc, I = I = 1.0 Adc)
Storage Time
−
−
1.0
0.8
ms
ms
CC
C
B1
B2
s
Fall Time
t
f
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f = |h | • f .
test
T
fe
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
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2
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
V
−ꢂ30 V
3.0
CC
TURN−ON TIME
R
L
+ꢂ2.0 V
0
10
TO SCOPE
t ≤ 20 ns
r
2.0
1.0
R
B
T = 25°C
J
I /I = 10
−11ꢁV
10 to 100 ms
t ≤
r
20ꢁns
C
B
V
V
= 30 V
CC
BE(off)
0.7
0.5
= 2 V
DUTY CYCLE ≈ 2.0%
V
−ꢂ30 V
3.0
CC
0.3
0.2
t
r
TURN−OFF TIME
R
L
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
+9.0ꢁV
0.1
10
TO SCOPE
t ≤ 20 ns
t
d
0
0.07
0.05
r
R
B
−11ꢁV
t ≤ 20ꢁns
r
0.03
0.02
V
+ꢂ7.0 V
10 to 100 ms
DUTY CYCLE ≈ 2.0%
FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED.
BB
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I , COLLECTOR CURRENT (AMPERES)
C
B
L
Figure 3. Turn−On Time
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
1.0
D = 0.5
0.5
0.2
0.2
0.1
P
(pk)
q
q
(t) = r(t) q
JC
JC
0.1
0.05
0.02
= 0.875°C/W MAX
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.05
t
1
0.01
READ TIME AT t
1
t
2
T
− T = P q (t)
C (pk) JC
J(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05
0.02
0.01
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000 2000
t, TIME (ms)
Figure 4. Thermal Response
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
50
500 ms
1ꢁms
5ꢁms
20
10
breakdown. Safe operating area curves indicate I − V
C
CE
dc
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T = 200°C
J
5.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
2.0
1.0
0.5
The data of Figure 5 is based on T
= 200°C; T is
J(pk)
C
THERMAL LIMITATION @ T = 25°C
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
(SINGLE PULSE)
J(pk)
CURVES APPLY BELOW RATED V
CEO
v 200°C. T
may be calculated from the data in
J(pk)
2N5883, 2N5885
2N5884, 2N5886
0.2
0.1
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active−Region Safe Operating Area
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3
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
3000
10
7.0
T = 25°C
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
J
T = 25°C
J
V = 30 V
CC
I /I = 10
5.0
2000
C
B
C
ob
3.0
2.0
I = I
B1 B2
t
s
C
ib
t
s
1000
700
1.0
0.7
C
ib
0.5
t
f
0.3
0.2
500
t
f
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
C
ob
0.1
300
0.1
0.2
0.5 1.0 2.0
5.0
10
20
50 100
0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (AMPERES)
C
Figure 7. Capacitance
Figure 6. Turn−Off Time
PNP DEVICES
NPN DEVICES
2N5883 and 2N5884
2N5885 and 2N5886
1000
700
1000
700
V
= 4.0 V
CE
V
= 4.0 V
CE
500
T = 150°C
J
500
T = 150°C
J
300
200
300
200
25°C
−55°C
100
70
100
70
25°C
50
50
30
20
30
20
−ꢂ55°C
10
10
0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I , COLLECTOR CURRENT (AMPERES)
C
I , COLLECTOR CURRENT (AMPERES)
C
Figure 8. DC Current Gain
Figure 9. DC Current Gain
2.0
1.6
1.2
0.8
0.4
0
2.0
1.6
1.2
0.8
0.4
0
T = 25°C
T = 25°C
J
J
I = 2.0 A
C
5.0 A
10 A
20 A
I = 2.0 A
C
5.0 A
10 A
20 A
0.01 0.02
0.05 0.1
0.2
0.5 1.0 2.0
5.0
10
0.01 0.02
0.05 0.1
0.2
0.5
1.0 2.0
5.0
10
I , BASE CURRENT (AMPERES)
B
I , COLLECTOR CURRENT (AMPERES)
B
Figure 10. Collector Saturation Region
Figure 11. Collector Saturation Region
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4
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2.0
1.6
1.2
0.8
0.4
0
2.0
T = 25°C
T = 25°C
J
J
1.6
1.2
V
@ I /I = 10
B
V
@ I /I = 10
BE(sat) C B
BE(sat)
C
0.8
0.4
0
V
@ V = 4 V
CE
BE
V
@ V = 4 V
CE
BE
V
@ I /I = 10
B
V
@ I /I = 10
CE(sat) C B
CE(sat)
C
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I , COLLECTOR CURRENT (AMPERES)
C
I , COLLECTOR CURRENT (AMPERES)
C
Figure 12. “On” Voltages
Figure 13. “On” Voltages
ORDERING INFORMATION
Device
2N5883
Package
Shipping
TO−204
2N5883G
TO−204
(Pb−Free)
2N5884
TO−204
2N5884G
TO−204
(Pb−Free)
100 Units / Tray
2N5885
TO−204
2N5885G
TO−204
(Pb−Free)
2N5886
TO−204
TO−204
(Pb−Free)
2N5886G
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5
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
−T−
E
K
D 2 PL
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
39.37 REF
−−− 26.67
M
M
M
Y
0.13 (0.005)
T Q
A
B
C
D
E
G
H
K
L
1.550 REF
−−− 1.050
0.250
0.038
0.055
0.335
0.043
0.070
6.35
0.97
1.40
8.51
1.09
1.77
U
0.430 BSC
0.215 BSC
0.440 0.480
10.92 BSC
5.46 BSC
11.18 12.19
−Y−
L
V
H
0.665 BSC
−−− 0.830
16.89 BSC
−−− 21.08
2
1
N
Q
U
V
B
G
0.151
1.187 BSC
0.131 0.188
0.165
3.84
4.19
30.15 BSC
3.33
4.77
−Q−
0.13 (0.005)
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
M
T Y
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2N5883/D
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