2N5885 [ONSEMI]

Complementary Silicon High−Power Transistors; 互补硅大功率晶体管
2N5885
型号: 2N5885
厂家: ONSEMI    ONSEMI
描述:

Complementary Silicon High−Power Transistors
互补硅大功率晶体管

晶体 晶体管 局域网
文件: 总6页 (文件大小:95K)
中文:  中文翻译
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2N5883, 2N5884 (PNP)  
2N5885, 2N5886 (NPN)  
2N5884 and 2N5886 are Preferred Devices  
Complementary Silicon  
High−Power Transistors  
Complementary silicon high−power transistors are designed for  
general−purpose power amplifier and switching applications.  
http://onsemi.com  
Features  
25 AMPERE COMPLEMENTARY  
SILICON POWER TRANSISTORS  
60 − 80 VOLTS, 200 WATTS  
Low Collector−Emitter Saturation Voltage −  
V
= 1.0 Vdc, (max) at I = 15 Adc  
C
CE(sat)  
Low Leakage Current  
= 1.0 mAdc (max) at Rated Voltage  
I
CEX  
Excellent DC Current Gain −  
= 20 (min) at I = 10 Adc  
h
FE  
C
High Current Gain Bandwidth Product −  
f = 4.0 MHz (min) at I = 1.0 Adc  
t
C
Pb−Free Packages are Available*  
TO−204AA (TO−3)  
CASE 1−07  
MAXIMUM RATINGS (Note 1)  
STYLE 1  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
2N5883, 2N5885  
V
Vdc  
CEO  
MARKING DIAGRAM  
60  
80  
2N5884, 2N5886  
Collector−Base Voltage  
2N5883, 2N5885  
V
Vdc  
CB  
60  
80  
2N5884, 2N5886  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
2N588xG  
AYYWW  
MEX  
Collector Current −  
Continuous  
Peak  
I
C
B
25  
50  
Base Current  
I
7.5  
Adc  
Total Device Dissipation @ T = 25°C  
P
200  
1.15  
W
W/°C  
C
D
Derate above 25°C  
2N588x = Device Code  
x = 3, 4, 5, or 6  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +200  
°C  
J
stg  
G
A
YY  
WW  
MEX  
= Pb−Free Package  
= Assembly Location  
= Year  
THERMAL CHARACTERISTICS  
Characteristic  
= Work Week  
Symbol  
Max  
Unit  
= Country of Origin  
Thermal Resistance, Junction−to−Case  
q
0.875  
°C/W  
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1. Indicates JEDEC registered data. Units and conditions differ on some  
parameters and re−registration reflecting these changes has been requested.  
All above values most or exceed present JEDEC registered data.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 11  
2N5883/D  
 
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)  
ELECTRICAL CHARACTERISTICS (Note 2) (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector−Emitter Sustaining Voltage (Note 3)  
(I = 200 mAdc, I = 0)  
2N5883, 2N5885  
2N5884, 2N5886  
V
60  
80  
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
CEO  
2N5883, 2N5885  
2N5984, 2N5886  
2.0  
2.0  
mAdc  
mAdc  
CE  
B
(V = 40 Vdc, I = 0)  
CE  
B
Collector Cutoff Current  
I
CEX  
(V = 60 Vdc, V  
= 1.5 Vdc)  
= 1.5 Vdc)  
= 1.5 Vdc, T = 150°C)  
= 1.5 Vdc, T = 150°C)  
2N5883, 2N5885  
2N5884, 2N5886  
2N5883, 2N5885  
2N5884, 2N5886  
CE  
BE(off)  
BE(off)  
BE(off)  
BE(off)  
1.0  
1.0  
10  
(V = 80 Vdc, V  
CE  
(V = 60 Vdc, V  
CE  
C
C
(V = 80 Vdc, V  
CE  
10  
Collector Cutoff Current  
(V = 60 Vdc, I = 0)  
I
I
CBO  
2N5883, 2N5885  
2N5884, 2N5886  
mAdc  
mAdc  
CB  
E
1.0  
1.0  
(V = 80 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)  
1.0  
EB  
C
EBO  
ON CHARACTERISTICS  
DC Current Gain (Note 3)  
h
FE  
(I = 3.0 Adc, V = 4.0 Vdc)  
35  
20  
100  
C
CE  
(I = 10 Adc, V = 4.0 Vdc)  
C
CE  
(I = 25 Adc, V = 4.0 Vdc)  
4.0  
C
CE  
Collector−Emitter Saturation Voltage (Note 3)  
(I = 15 Adc, I = 1.5 Adc)  
V
V
CE(sat)  
1.0  
4.0  
Vdc  
C
B
(I = 25 Adc, I = 6.25 Adc)  
C
B
Base−Emitter Saturation Voltage (Note 3) (I = 25 Adc, I = 6.25 Adc)  
2.5  
1.5  
Vdc  
Vdc  
C
B
BE(sat)  
Base−Emitter On Voltage (Note 3) (I = 10 Adc, V = 4.0 Vdc)  
V
BE(on)  
C
CE  
DYNAMIC CHARACTERISTICS  
Current−Gain − Bandwidth Product (Note 4) (I = 1.0 Adc, V = 10 Vdc, f  
= 1.0 MHz)  
f
4.0  
MHz  
pF  
C
CE  
test  
T
Output Capacitance  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
2N5883, 2N5884  
2N5885, 2N5886  
C
1000  
500  
ob  
CB  
E
Small−Signal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f  
= 1.0 kHz)  
h
fe  
20  
C
CE  
test  
SWITCHING CHARACTERISTICS  
Rise Time  
t
t
0.7  
ms  
r
(V = 30 Vdc, I = 10 Adc, I = I = 1.0 Adc)  
Storage Time  
1.0  
0.8  
ms  
ms  
CC  
C
B1  
B2  
s
Fall Time  
t
f
2. Indicates JEDEC Registered Data.  
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
4. f = |h | f .  
test  
T
fe  
200  
175  
150  
125  
100  
75  
50  
25  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
http://onsemi.com  
2
 
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)  
V
−ꢂ30 V  
3.0  
CC  
TURN−ON TIME  
R
L
+ꢂ2.0 V  
0
10  
TO SCOPE  
t 20 ns  
r
2.0  
1.0  
R
B
T = 25°C  
J
I /I = 10  
−11ꢁV  
10 to 100 ms  
t ≤  
r
20ꢁns  
C
B
V
V
= 30 V  
CC  
BE(off)  
0.7  
0.5  
= 2 V  
DUTY CYCLE 2.0%  
V
−ꢂ30 V  
3.0  
CC  
0.3  
0.2  
t
r
TURN−OFF TIME  
R
L
2N5883, 2N5884 (PNP)  
2N5885, 2N5886 (NPN)  
+9.0ꢁV  
0.1  
10  
TO SCOPE  
t 20 ns  
t
d
0
0.07  
0.05  
r
R
B
−11ꢁV  
t 20ꢁns  
r
0.03  
0.02  
V
+ꢂ7.0 V  
10 to 100 ms  
DUTY CYCLE 2.0%  
FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED.  
BB  
0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
I , COLLECTOR CURRENT (AMPERES)  
C
B
L
Figure 3. Turn−On Time  
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.  
FOR NPN, REVERSE ALL POLARITIES.  
Figure 2. Switching Time Equivalent Test Circuits  
1.0  
D = 0.5  
0.5  
0.2  
0.2  
0.1  
P
(pk)  
q
q
(t) = r(t) q  
JC  
JC  
0.1  
0.05  
0.02  
= 0.875°C/W MAX  
JC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
0.05  
t
1
0.01  
READ TIME AT t  
1
t
2
T
− T = P q (t)  
C (pk) JC  
J(pk)  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.05  
0.02  
0.01  
0.02  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1000 2000  
t, TIME (ms)  
Figure 4. Thermal Response  
100  
There are two limitations on the power handling ability of  
a transistor: average junction temperature and second  
50  
500 ms  
1ꢁms  
5ꢁms  
20  
10  
breakdown. Safe operating area curves indicate I − V  
C
CE  
dc  
limits of the transistor that must be observed for reliable  
operation; i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
T = 200°C  
J
5.0  
SECOND BREAKDOWN LIMITED  
BONDING WIRE LIMITED  
2.0  
1.0  
0.5  
The data of Figure 5 is based on T  
= 200°C; T is  
J(pk)  
C
THERMAL LIMITATION @ T = 25°C  
C
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided T  
(SINGLE PULSE)  
J(pk)  
CURVES APPLY BELOW RATED V  
CEO  
v 200°C. T  
may be calculated from the data in  
J(pk)  
2N5883, 2N5885  
2N5884, 2N5886  
0.2  
0.1  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active−Region Safe Operating Area  
http://onsemi.com  
3
 
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)  
3000  
10  
7.0  
T = 25°C  
2N5883, 2N5884 (PNP)  
2N5885, 2N5886 (NPN)  
J
T = 25°C  
J
V = 30 V  
CC  
I /I = 10  
5.0  
2000  
C
B
C
ob  
3.0  
2.0  
I = I  
B1 B2  
t
s
C
ib  
t
s
1000  
700  
1.0  
0.7  
C
ib  
0.5  
t
f
0.3  
0.2  
500  
t
f
2N5883, 2N5884 (PNP)  
2N5885, 2N5886 (NPN)  
C
ob  
0.1  
300  
0.1  
0.2  
0.5 1.0 2.0  
5.0  
10  
20  
50 100  
0.3 0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (AMPERES)  
C
Figure 7. Capacitance  
Figure 6. Turn−Off Time  
PNP DEVICES  
NPN DEVICES  
2N5883 and 2N5884  
2N5885 and 2N5886  
1000  
700  
1000  
700  
V
= 4.0 V  
CE  
V
= 4.0 V  
CE  
500  
T = 150°C  
J
500  
T = 150°C  
J
300  
200  
300  
200  
25°C  
−55°C  
                                                        
100  
70  
100  
70  
25°C  
50  
50  
30  
20  
30  
20  
−ꢂ55°C  
10  
10  
0.3 0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
0.3 0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
I , COLLECTOR CURRENT (AMPERES)  
C
I , COLLECTOR CURRENT (AMPERES)  
C
Figure 8. DC Current Gain  
Figure 9. DC Current Gain  
2.0  
1.6  
1.2  
0.8  
0.4  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0
T = 25°C  
T = 25°C  
J
J
I = 2.0 A  
C
5.0 A  
10 A  
20 A  
I = 2.0 A  
C
5.0 A  
10 A  
20 A  
0.01 0.02  
0.05 0.1  
0.2  
0.5 1.0 2.0  
5.0  
10  
0.01 0.02  
0.05 0.1  
0.2  
0.5  
1.0 2.0  
5.0  
10  
I , BASE CURRENT (AMPERES)  
B
I , COLLECTOR CURRENT (AMPERES)  
B
Figure 10. Collector Saturation Region  
Figure 11. Collector Saturation Region  
http://onsemi.com  
4
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)  
2.0  
1.6  
1.2  
0.8  
0.4  
0
2.0  
T = 25°C  
T = 25°C  
J
J
1.6  
1.2  
V
@ I /I = 10  
B
V
@ I /I = 10  
BE(sat) C B  
BE(sat)  
C
0.8  
0.4  
0
V
@ V = 4 V  
CE  
BE  
V
@ V = 4 V  
CE  
BE  
V
@ I /I = 10  
B
V
@ I /I = 10  
CE(sat) C B  
CE(sat)  
C
0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
I , COLLECTOR CURRENT (AMPERES)  
C
I , COLLECTOR CURRENT (AMPERES)  
C
Figure 12. “On” Voltages  
Figure 13. “On” Voltages  
ORDERING INFORMATION  
Device  
2N5883  
Package  
Shipping  
TO−204  
2N5883G  
TO−204  
(Pb−Free)  
2N5884  
TO−204  
2N5884G  
TO−204  
(Pb−Free)  
100 Units / Tray  
2N5885  
TO−204  
2N5885G  
TO−204  
(Pb−Free)  
2N5886  
TO−204  
TO−204  
(Pb−Free)  
2N5886G  
http://onsemi.com  
5
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)  
PACKAGE DIMENSIONS  
TO−204 (TO−3)  
CASE 1−07  
ISSUE Z  
A
N
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. ALL RULES AND NOTES ASSOCIATED WITH  
REFERENCED TO−204AA OUTLINE SHALL APPLY.  
C
SEATING  
PLANE  
−T−  
E
K
D 2 PL  
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN MAX  
39.37 REF  
−−− 26.67  
M
M
M
Y
0.13 (0.005)  
T Q  
A
B
C
D
E
G
H
K
L
1.550 REF  
−−− 1.050  
0.250  
0.038  
0.055  
0.335  
0.043  
0.070  
6.35  
0.97  
1.40  
8.51  
1.09  
1.77  
U
0.430 BSC  
0.215 BSC  
0.440 0.480  
10.92 BSC  
5.46 BSC  
11.18 12.19  
−Y−  
L
V
H
0.665 BSC  
−−− 0.830  
16.89 BSC  
−−− 21.08  
2
1
N
Q
U
V
B
G
0.151  
1.187 BSC  
0.131 0.188  
0.165  
3.84  
4.19  
30.15 BSC  
3.33  
4.77  
−Q−  
0.13 (0.005)  
STYLE 1:  
PIN 1. BASE  
2. EMITTER  
CASE: COLLECTOR  
M
M
T Y  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
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For additional information, please contact your  
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2N5883/D  

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