1PMT5927BT1G [ONSEMI]

3.2 Watt Plastic Surface Mount POWERMITE Package; 3.2瓦塑料表面贴装封装POWERMITE
1PMT5927BT1G
型号: 1PMT5927BT1G
厂家: ONSEMI    ONSEMI
描述:

3.2 Watt Plastic Surface Mount POWERMITE Package
3.2瓦塑料表面贴装封装POWERMITE

二极管 齐纳二极管 测试 PC
文件: 总6页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1PMT5920B Series  
3.2 Watt Plastic  
Surface Mount  
POWERMITE® Package  
This complete new line of 3.2 Watt Zener Diodes are offered in  
highly efficient micro miniature, space saving surface mount with its  
unique heat sink design. The POWERMITE package has the same  
thermal performance as the SMA while being 50% smaller in  
footprint area and delivering one of the lowest height profiles  
(1.1 mm) in the industry. Because of its small size, it is ideal for use  
in cellular phones, portable devices, business machines and many  
other industrial/consumer applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
3.2 WATT ZENER DIODES  
6.2 − 47 VOLTS  
Features  
1
2
Zener Breakdown Voltage: 6.2 − 47 V  
DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C  
Low Leakage < 5 mA  
1: CATHODE  
2: ANODE  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Low Profile − Maximum Height of 1.1 mm  
Integral Heat Sink/Locking Tabs  
1
POWERMITE  
CASE 457  
PLASTIC  
Full Metallic Bottom Eliminates Flux Entrapment  
2
2
Small Footprint − Footprint Area of 8.45 mm  
Supplied in 12 mm Tape and Reel  
T1 = 3,000 Units per Reel  
MARKING DIAGRAM  
T3 = 12,000 Units per Reel  
Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes  
POWERMITE is JEDEC Registered as DO−216AA  
Cathode Indicated by Polarity Band  
Pb−Free Packages are Available  
M
xxBG  
G
1
2
CATHODE  
ANODE  
Mechanical Characteristics  
M
xxB  
= Date Code  
= Specific Device Code  
(See Table on Page 2)  
= Pb−Free Package  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
G
MOUNTING POSITION: Any  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1PMT59xxBT1 POWERMITE 3,000/Tape&Reel  
1PMT59xxBT1G POWERMITE 3,000/Tape&Reel  
(Pb−Free)  
1PMT59xxBT3 POWERMITE 12,000/Tape&Reel  
1PMT59xxBT3G POWERMITE 12,000/Tape&Reel  
(Pb−Free)  
Individual devices are listed on page 2 of this data sheet.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
July, 2005 − Rev. 3  
1PMT5920B/D  
1PMT5920B Series  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
DC Power Dissipation @ T = 25°C (Note 1)  
°P °  
500  
4.0  
248  
°mW  
mW/°C  
°C/W  
A
D
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Thermal Resistance, Junction−to−Lead (Anode)  
R
q
Janode  
35  
°C/W  
Maximum DC Power Dissipation (Note 2)  
Thermal Resistance from Junction−to−Tab (Cathode)  
°P °  
Jcathode  
3.2  
23  
W
°C/W  
D
R
q
Operating and Storage Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. Mounted with recommended minimum pad size, PC board FR−4.  
2. At Tab (Cathode) temperature, T = 75°C  
tab  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
I
L
otherwise noted, V = 1.5 V Max. @ I = 200 mAdc for all types)  
F
F
I
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
V
V
R
Z
I
Maximum Zener Impedance @ I  
Reverse Current  
Z
ZT  
ZT  
ZK  
V
I
V
R
ZT  
F
I
ZK  
Z
Maximum Zener Impedance @ I  
ZK  
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
V
R
I
Forward Current  
F
Zener Voltage Regulator  
V
Forward Voltage @ I  
F
F
ELECTRICAL CHARACTERISTICS (T = 30°C unless otherwise noted, V = 1.25 Volts @ 200 mA)  
L
F
Zener Voltage (Note 3)  
Z
@ I  
Z
@ I  
ZK ZK  
ZT  
ZT  
V
@ I (Volts)  
(Note 4)  
(Note 4)  
I
I
@ V  
V
I
ZK  
Z
ZT  
ZT  
R
R
R
Device  
Marking  
Min  
5.89  
6.46  
7.12  
7.79  
8.64  
9.5  
Nom  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
Max  
6.51  
7.14  
7.88  
8.61  
9.56  
10.5  
12.6  
15.75  
16.8  
18.9  
23.1  
25.2  
28.35  
31.5  
40.95  
49.35  
(mA)  
60.5  
55.1  
50  
(mA)  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
(V)  
4.0  
(W)  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
6.5  
9.0  
10  
(W)  
200  
200  
400  
400  
500  
500  
550  
600  
600  
650  
650  
700  
700  
750  
900  
1000  
(mA)  
1.0  
Device*  
1PMT5920BT1, T3,G  
1PMT5921BT1, T3,G  
1PMT5922BT1, T3,G  
1PMT5923BT1, T3,G  
1PMT5924BT1, T3,G  
1PMT5925BT1, T3,G  
1PMT5927BT1, T3,G  
1PMT5929BT1, T3,G  
1PMT5930BT1, T3,G  
1PMT5931BT1, T3,G  
1PMT5933BT1, T3,G  
1PMT5934BT1, T3,G  
1PMT5935BT1, T3,G  
1PMT5936BT1, T3,G  
1PMT5939BT1, T3,G  
1PMT5941BT1, T3,G  
20B  
21B  
22B  
23B  
24B  
25B  
27B  
29B  
30B  
31B  
33B  
34B  
35B  
36B  
39B  
41B  
5.2  
1.0  
6.0  
0.5  
45.7  
41.2  
37.5  
31.2  
25  
6.5  
0.5  
7.0  
0.5  
8.0  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
11.4  
14.25  
15.2  
17.1  
20.9  
22.8  
25.65  
28.5  
37.05  
44.65  
12  
9.1  
15  
11.4  
12.2  
13.7  
16.7  
18.2  
20.6  
22.8  
29.7  
35.8  
16  
23.4  
20.8  
17  
18  
12  
22  
17.5  
19  
24  
15.6  
13.9  
12.5  
9.6  
27  
23  
30  
28  
39  
45  
47  
8.0  
67  
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.  
4. Zener Impedance Derivation Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The  
ZT  
ZK  
specified limits are for I (ac) = 0.1 I (dc) with the ac frequency = 60 Hz.  
Z
Z
* The “G” suffix indicates Pb−Free package available.  
http://onsemi.com  
2
 
1PMT5920B Series  
TYPICAL CHARACTERISTICS  
3.5  
3
100  
2.5  
2
10  
T
L
1.5  
1
1
0.5  
0
0.1  
25  
50  
75  
100  
125  
150  
175  
5
6
7
8
9
10  
11  
T, TEMPERATURE (°C)  
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 1. Steady State Power Derating  
Figure 2. VZ to 10 Volts  
10  
8
100  
50  
30  
20  
V
@ I  
Z
ZT  
6
4
10  
5
3
2
2
1
0
0.5  
−2  
−4  
0.3  
0.2  
0.1  
2
4
6
8
10  
12  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
V , ZENER VOLTAGE (VOLTS)  
Z
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 4. Zener Voltage − To 12 Volts  
Figure 3. VZ = 12 thru 47 Volts  
200  
100  
200  
I
= 1mA  
Z(dc)  
100  
70  
V
@ I  
ZT  
Z
50  
70  
50  
30  
20  
30  
20  
10  
7
10 mA  
20 mA  
5
3
2
i
= 0.1 I  
50  
Z(rms)  
Z(dc)  
10  
5
7
10  
20  
30  
70  
100  
10  
20  
30  
50  
70  
100  
200  
V , ZENER VOLTAGE (VOLTS)  
Z
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 5. Zener Voltage − 14 To 47 Volts  
Figure 6. Effect of Zener Voltage  
http://onsemi.com  
3
1PMT5920B Series  
1 k  
T = 25°C  
Z(rms)  
J
500  
i
= 0.1 I  
Z(dc)  
200  
100  
50  
20  
10  
5
22 V  
2
1
12 V  
6.8 V  
50 100 200 500  
0.5  
1
2
5
10  
20  
I , ZENER TEST CURRENT (mA)  
Z
Figure 7. Effect of Zener Current  
10,000  
1000  
MEASURED @ 0 V BIAS  
MEASURED @ 50% V  
R
100  
10  
1
10  
100  
V , REVERSE ZENER VOLTAGE (VOLTS)  
Z
Figure 8. Capacitance versus Reverse  
Zener Voltage  
http://onsemi.com  
4
1PMT5920B Series  
OUTLINE DIMENSIONS  
POWERMITE)  
CASE 457−04  
ISSUE D  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,  
PROTRUSIONS OR GATE BURRS. MOLD FLASH,  
PROTRUSIONS OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
F
C
−A−  
M
S
S
C
0.08 (0.003)  
T
B
J
S
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
TERM. 1  
MAX  
0.081  
0.086  
0.045  
0.027  
0.039  
−B−  
A
B
C
D
F
1.75  
1.75  
0.85  
0.40  
0.70  
−0.05  
0.10  
3.60  
0.50  
1.20  
2.05 0.069  
2.18 0.069  
1.15 0.033  
0.69 0.016  
1.00 0.028  
K
TERM. 2  
H
J
+0.10 −0.002 +0.004  
R
0.25 0.004  
3.90 0.142  
0.80 0.020  
1.50 0.047  
0.010  
0.154  
0.031  
0.059  
L
K
L
R
S
J
0.50 REF  
0.019 REF  
D
H
M
S
S
0.08 (0.003)  
T
B
C
−T−  
SOLDERING FOOTPRINT*  
0.635  
0.025  
2.67  
0.762  
0.030  
0.105  
2.54  
0.100  
1.27  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
1PMT5920B Series  
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
1PMT5920B/D  

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