1PMT5927BT3 [ONSEMI]
3.2 Watt Plastic Surface Mount POWERMITE Package; 3.2瓦塑料表面贴装封装POWERMITE
| 型号： | 1PMT5927BT3 |
| 厂家： | 
ONSEMI |
| 描述： | 3.2 Watt Plastic Surface Mount POWERMITE Package |
| 文件： | 总8页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1PMT5920B Series
3.2 Watt Plastic
Surface Mount
POWERMITE Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles (1.1
mm) in the industry. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines and many other
industrial/consumer applications.
http://onsemi.com
PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 − 47 VOLTS
Specification Features:
• Zener Breakdown Voltage: 6.2 − 47 Volts
• DC Power Dissipation: 3.2 Watts with Tab 1 (Cathode) @ 75°C
• Low Leakage < 5 mA
1
2
1: CATHODE
2: ANODE
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Low Profile − Maximum Height of 1.1 mm
• Integral Heat Sink/Locking Tabs
1
• Full Metallic Bottom Eliminates Flux Entrapment
2
• Small Footprint − Footprint Area of 8.45 mm
2
• Supplied in 12 mm Tape and Reel
T1 = 3,000 Units per Reel
POWERMITE
CASE 457
PLASTIC
T3 = 12,000 Units per Reel
• POWERMITE is JEDEC Registered as DO−216AA
• Cathode Indicated by Polarity Band
MARKING DIAGRAM
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
D
xxB
1
2
CATHODE
ANODE
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
xxB
xx
= Specific Device Code
= 20 − 41
= (See Table Next Page)
= Date Code
D
ORDERING INFORMATION
Device
Package
Shipping
1PMT59xxBT1 POWERMITE 3,000/Tape & Reel
1PMT59xxBT3 POWERMITE 12,000/Tape & Reel
LEAD ORIENTATION IN TAPE:
Cathode (Short) Lead to Sprocket Holes
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
July, 2003 − Rev. 0
1PMT5920B/D
1PMT5920B Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Power Dissipation @ T = 25°C (Note 1)
Derate above 25°C
Thermal Resistance from Junction to Ambient
°P °
500
4.0
248
°mW
mW/°C
°C/W
A
D
R
q
JA
Thermal Resistance from Junction to Lead (Anode)
R
35
°C/W
q
Janode
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from Junction to Tab (Cathode)
°P °
3.2
23
W
°C/W
D
R
q
Jcathode
Operating and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
1. Mounted with recommended minimum pad size, PC board FR−4.
2. At Tab (Cathode) temperature, T = 75°C
tab
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
L
otherwise noted, V = 1.5 V Max. @ I = 200 mAdc for all types)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
Z
I
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
V
I
V
F
R
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
F
Forward Current
Zener Voltage Regulator
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 30°C unless otherwise noted, V = 1.25 Volts @ 200 mA)
L
F
Zener Voltage (Note 3)
Z
ZT
@ I
Z @ I
ZK ZK
ZT
V @ I (Volts)
(Note 4)
(W)
2.0
2.5
3.0
3.5
4.0
4.5
6.5
9.0
10
(Note 4)
I
I
R
@ V
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
I
Z
ZT
ZT
R
R
ZK
Device
Marking
Min
5.89
6.46
7.12
7.79
8.64
9.5
Nom
Max
6.51
7.14
7.88
8.61
9.56
10.5
12.6
15.75
16.8
18.9
23.1
25.2
28.35
31.5
40.95
49.35
(mA)
60.5
55.1
50
(V)
4.0
(W)
(mA)
1.0
Device
1PMT5920BT1, T3
1PMT5921BT1, T3
1PMT5922BT1, T3
1PMT5923BT1, T3
1PMT5924BT1, T3
1PMT5925BT1, T3
1PMT5927BT1, T3
1PMT5929BT1, T3
1PMT5930BT1, T3
1PMT5931BT1, T3
1PMT5933BT1, T3
1PMT5934BT1, T3
1PMT5935BT1, T3
1PMT5936BT1, T3
1PMT5939BT1, T3
1PMT5941BT1, T3
20B
21B
22B
23B
24B
25B
27B
29B
30B
31B
33B
34B
35B
36B
39B
41B
6.2
6.8
7.5
8.2
9.1
10
12
15
16
18
22
24
27
30
39
47
200
200
400
400
500
500
550
600
600
650
650
700
700
750
900
1000
5.2
1.0
6.0
0.5
45.7
41.2
37.5
31.2
25
6.5
0.5
7.0
0.5
8.0
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
11.4
14.25
15.2
17.1
20.9
22.8
25.65
28.5
37.05
44.65
9.1
11.4
12.2
13.7
16.7
18.2
20.6
22.8
29.7
35.8
23.4
20.8
17
12
17.5
19
15.6
13.9
12.5
9.6
23
28
45
8.0
67
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The
ZT
ZK
specified limits are for I (ac) = 0.1 I (dc) with the ac frequency = 60 Hz.
Z
Z
http://onsemi.com
2
1PMT5920B Series
TYPICAL CHARACTERISTICS
3.5
3
100
2.5
2
10
T
L
1.5
1
1
0.5
0
0.1
25
50
75
100
125
150
175
5
6
7
8
9
10
11
T, TEMPERATURE (°C)
V , ZENER VOLTAGE (VOLTS)
Z
Figure 1. Steady State Power Derating
Figure 2. VZ to 10 Volts
10
8
100
50
30
20
V @ I
Z
ZT
6
4
10
5
3
2
2
1
0
0.5
−2
−4
0.3
0.2
0.1
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
90 100
V , ZENER VOLTAGE (VOLTS)
Z
V , ZENER VOLTAGE (VOLTS)
Z
Figure 4. Zener Voltage − To 12 Volts
Figure 3. VZ = 12 thru 47 Volts
200
100
200
I
= 1mA
Z(dc)
100
70
V @ I
Z
ZT
50
70
50
30
20
30
20
10
7
10 mA
20 mA
5
3
2
i
= 0.1 I
50
Z(rms)
Z(dc)
10
5
7
10
20
30
70
100
10
20
30
50
70
100
200
V , ZENER VOLTAGE (VOLTS)
Z
V , ZENER VOLTAGE (VOLTS)
Z
Figure 5. Zener Voltage − 14 To 47 Volts
Figure 6. Effect of Zener Voltage
http://onsemi.com
3
1PMT5920B Series
1 k
T = 25°C
J
500
i
= 0.1 I
Z(dc)
Z(rms)
200
100
50
20
10
5
22 V
2
1
12 V
6.8 V
50 100 200 500
0.5
1
2
5
10
20
I , ZENER TEST CURRENT (mA)
Z
Figure 7. Effect of Zener Current
10,000
1000
MEASURED @ 0 V BIAS
MEASURED @ 50% V
R
100
10
1
10
100
V , REVERSE ZENER VOLTAGE (VOLTS)
Z
Figure 8. Capacitance versus Reverse
Zener Voltage
http://onsemi.com
4
1PMT5920B Series
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177−189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 9 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems, but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
STEP 2 STEP 3
VENT HEATING
SOAK" ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
STEP 4
HEATING
STEP 5
HEATING
STEP 6
VENT
STEP 7
COOLING
PREHEAT
ZONE 1
RAMP"
RAMP"
SOAK"
SPIKE"
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
200°C
150°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 9. Typical Solder Heating Profile
http://onsemi.com
5
1PMT5920B Series
INFORMATION FOR USING THE POWERMITE SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.635
0.105
2.67
0.030
0.762
0.100
2.54
0.050
1.27
inches
mm
POWERMITE
POWERMITE POWER DISSIPATION
The power dissipation of the Powermite is a function of
SOLDERING PRECAUTIONS
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
determined by T
, the maximum rated junction
J(max)
temperature of the die, R , the thermal resistance from
qJA
the device junction to ambient, and the operating
temperature, T . Using the values provided on the data
A
sheet for the Powermite package, P can be calculated as
D
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
follows:
T
J(max) − TA
Rq
PD =
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 504 milliwatts.
150°C − 25°C
PD =
= 504 milliwatts
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
248°C/W
The 248°C/W for the Powermite package assumes the
use of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 504
milliwatts. There are other alternatives to achieving higher
power dissipation from the Powermite package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
6
1PMT5920B Series
OUTLINE DIMENSIONS
1PMT5920BT3 Series − Surface Mounted
POWERMITE
CASE 457−04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
F
C
−A−
M
S
S
C
0.08 (0.003)
T
B
J
S
MILLIMETERS
INCHES
MIN
TERM. 1
DIM MIN
MAX
2.05
2.18
1.15
0.69
1.00
MAX
0.081
0.086
0.045
0.027
0.039
−B−
A
B
C
D
F
1.75
1.75
0.85
0.40
0.70
−0.05
0.10
3.60
0.50
1.20
0.069
0.069
0.033
0.016
0.028
K
TERM. 2
H
J
+0.10 −0.002 +0.004
0.25
3.90
0.80
1.50
0.004
0.142
0.020
0.047
0.010
0.154
0.031
0.059
R
K
L
L
R
S
0.50 REF
0.019 REF
J
D
H
M
S
S
0.08 (0.003)
T
B
C
−T−
http://onsemi.com
7
1PMT5920B Series
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
Thermal Clad is a trademark of the Bergquist Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800−282−9855 Toll Free USA/Canada
1PMT5920B/D
相关型号：
1PMT5927C/TR7
Zener Diode, 12V V(Z), 2%, 3W, Silicon, Unidirectional, DO-216AA, DO-216, 2 PIN
MICROSEMI
1PMT5927CE3
Zener Diode, 12V V(Z), 2%, 0.54W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, 2 PIN
MICROSEMI
1PMT5928B/TR13
Zener Diode, 13V V(Z), 5%, 3W, Silicon, Unidirectional, DO-216AA, DO-216, 2 PIN
MICROSEMI
1PMT5928BE3
Zener Diode, 13V V(Z), 5%, 0.54W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, 2 PIN
MICROSEMI
1PMT5928BE3/TR13
Zener Diode, 13V V(Z), 5%, 0.54W, Silicon, Unidirectional, DO-216AA, ROHS COMPLIANT, PLASTIC, DO-216, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明