TDA1300 [NXP]
Photodetector amplifiers and laser supplies; 光电放大器和激光耗材
| 型号： | TDA1300 |
| 厂家： | 
NXP |
| 描述： | Photodetector amplifiers and laser supplies |
| 文件： | 总20页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA1300T; TDA1300TT
Photodetector amplifiers and laser
supplies
1997 Jul 15
Preliminary specification
Supersedes data of 1995 Nov 16
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
FEATURES
GENERAL DESCRIPTION
• Six input buffer amplifiers with low-pass filtering with
virtually no offset
The TDA1300 is an integrated data amplifier and laser
supply for three beam pick-up detectors applied in a wide
range of mechanisms for Compact Disc (CD) and read
only optical systems. It offers 6 amplifiers which amplify
and filter the focus and radial diode signals adequately and
provides an equalized RF signal for single or double speed
mode which can be switched by means of the speed
control pin.
• HF data amplifier with a high or low gain mode
• Two built-in equalizers for single or double speed mode
ensuring high playability in both modes
• Full automatic laser control including stabilization and
an on/off switch and containing a separate supply VDDL
for power reduction
The device can handle astigmatic, single Foucault and
double Foucault detectors and is applicable with all N-sub
lasers and N-sub or P-sub monitor diode units.
• Applicable with N-sub laser with N-sub or P-sub monitor
diode
• Adjustable laser bandwidth and laser switch-on current
slope
After a single initial adjustment the circuit keeps control
over the laser diode current resulting in a constant light
output power independent of ageing. The chip is mounted
in a small SO24 or TSSOP24 package enabling mounting
close to the laser pick-up unit on the sledge.
• Protection circuit preventing laser damage due to supply
voltage dip
• Optimized interconnect between pick-up detector and
TDA1301
• Wide supply voltage range
• Wide temperature range
• Low power consumption.
QUICK REFERENCE DATA
SYMBOL
VDD
Diode current amplifiers (n = 1 to 6)
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
supply voltage
3
−
5.5
V
Gd(n)
IO(d)
B
diode current gain
diode offset current
3 dB bandwidth
1.43
−
1.55
−
1.67
100
−
nA
Ii(d) = 1.67 µA
50
−
kHz
RFE amplifier (built-in equalizer)
td(eq)
td(f)
equalization delay
flatness delay
fi = 0.3 MHz
−
−
320
5
−
−
ns
ns
double speed
Laser supply
Io(L)
output current
VDDL = 3 V
−
−
−100 mA
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA1300T
SO24
plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
SOT355-1
TDA1300TT
TSSOP24 plastic thin shrink small outline package; 24 leads; body width 4.4 mm
1997 Jul 15
2
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
BLOCK DIAGRAM
Id6
Id5
Id4
Id3
Id2
Id1
I6
out
out
out
out
out
out
23
20
24
22
19
21
2
in
in
in
in
in
in
6
5
4
3
2
1
1.5x
1.5x
1.5x
1.5x
1.5x
1.5x
I6
I5
I4
I3
I2
I1
O6
I5
I4
I3
I2
I1
5
O5
1
O4
3
O3
6
O2
4
O1
TDA1300T
95, 120, 134 or
240 kΩ
I
i(central)
−4
I/V
11
12
HG
LS
9
RFE
10
RF
V
(N-sub) or
(P-sub)
DD
14
17
ADJ
MI
V
I
gap
ADJ
8
V
DDL
16
V
I
(N-sub) or
(P-sub)
mon
OTA
ILO
LO
mon
18
15
V
DD
7
SUPPLY
ON/OFF
LDON
GND
13
CL
MBG474
Fig.1 Block diagram.
3
1997 Jul 15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
PINNING
SYMBOL PIN
DESCRIPTION
O4
1
2
3
4
5
6
7
current amplifier 4 output
current amplifier 6 output
current amplifier 3 output
current amplifier 1 output
current amplifier 5 output
current amplifier 2 output
O6
O3
O1
handbook, halfpage
O5
O4
O6
1
2
3
4
5
6
7
8
9
24 I4
23 I6
22 I3
21 I1
20 I5
19 I2
O2
LDON
control pin for switching the laser on
and off
O3
O1
VDDL
RFE
8
9
laser supply voltage
O5
equalized output voltage of sum signal
of amplifiers 1 to 4
O2
TDA1300T
RF
HG
LS
10 unequalized output
LDON
18 V
DD
11 control pin for gain switch
12 control pin for speed switch
13 external capacitor
V
17 MI
DDL
RFE
16 LO
15 GND
14 ADJ
13 CL
CL
RF 10
HG 11
LS 12
ADJ
14 P-sub monitor (if connected via
resistor to GND);
N-sub monitor (if connected to VDD
)
GND
LO
MI
VDD
I2
15 ground (substrate connection)
16 laser output; current output
17 monitor diode input (laser)
18 supply
MBG472
19 photo detector input 2 (central)
20 photo detector input 5 (satellite)
21 photo detector input 1 (central)
22 photo detector input 3 (central)
23 photo detector input 6 (satellite)
24 photo detector input 4 (central)
I5
I1
I3
I6
Fig.2 Pin configuration.
I4
1997 Jul 15
4
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
FUNCTIONAL DESCRIPTION
R
BN
ADJnK × Gext × 870×10–9 (Hz)
----------------
CL
The TDA1300T; TDA1300TT can be divided into two main
sections:
in case of N-sub monitor, where
ext represents the AC gain of an extra loop amplifier,
G
• Laser control circuit section
if applied, and K = ∆Imon/∆IL which is determined by
the laser/monitor unit. Imon is the average current
(pin 17) at typical light emission power of the laser
diode.
• Photo diode signal filter and amplification section.
Laser control circuit section
The main function of the laser control circuit is to control
the laser diode current in order to achieve a constant light
output power. This is done by monitoring the monitor
diode. There is a fixed relation between light output power
of the laser and the current of the monitor diode. The circuit
can handle P-sub or N-sub monitor diodes.
• The third part is the power output stage, its input being
the integrator output signal. This stage has a separate
supply voltage (VDDL), thereby offering the possibility of
reduced power consumption by supplying this pin with
the minimum voltage necessary.
It also has a laser diode protection circuit which comes into
action just before the driving output transistor will get
saturated due to a large voltage dip on VDDL. Saturation
will result in a lower current of the laser diode, which
normally is followed immediately by an increment of the
voltage of the external capacitor CL. This could cause
damage to the laser diode at the end of the dip.
The protection circuit prevents an increment of the
capacitor voltage and thus offers full protection to the laser
diode under these circumstances.
N-sub MONITOR
In this event pin 14 (ADJ) must be connected to the
positive supply voltage VDD to select the N-sub mode. With
an adjustable resistor (RADJn) across the diode the monitor
current can be adjusted (and so the laser light output
power) if one knows that the control circuit keeps the
monitor voltage Vmon at a constant level of
approximately 150 mV.
P-sub MONITOR
Photo diode signal filter and amplification section
In this event pin 14 (ADJ) is connected via resistor RADJp
to ground. The P-sub mode is selected and pin 14 (ADJ)
acts as reference band gap voltage, providing together
with RADJp an adjustable current lADJ. Now the control
This section has 6 identical current amplifiers.
Amplifiers 1 to 4 are designed to amplify the focus photo
diode signals. Each amplifier has two outputs: an
LF output and an internal RF output. Amplifiers 5 and 6
are used for the radial photo diode currents and only have
an LF output. All 6 output signals are low-pass filtered with
a corner frequency at 69 kHz. The internal RF output
signals are summed together and converted to a voltage
afterwards by means of a selectable transresistance.
circuit keeps the monitor current at a level which is 10lADJ
.
The circuit is built up in three parts:
• The first part is the input stage which is able to switch
between both modes (N-sub or P-sub).
• The second part is the integrator part which makes use
of an external capacitor CL. This capacitor has two
different functions:
This transresistance RRF can be changed between 140 kΩ
(3.3 V application) or 240 kΩ (5 V application) in
combination with the P-sub monitor. In the event of the
N-sub monitor selection, RRF can be changed between
70 kΩ (3.3 V application) and 120 kΩ (5 V application).
The RF signal is available directly at pin 10 but there is
also an unfiltered signal available at pin 9.
– During switch-on of the laser current, it provides a
current slope of typically:
10–6
CL
∆Io(L)
(A/s)
------------- -----------
∆t
The used equalization filter has 2 different filter curves:
• One for single-speed mode
– After switch-on it ensures that the bandwidth equals
K × Gext × 90×10–9
B P
(Hz)
-------------------------------------------------
• One for double-speed mode.
CL × Imon
in case of P-sub monitor or
1997 Jul 15
5
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Table 1 Gain and monitor modes
PIN
MONITOR MODE
RRF (kΩ)
INTENDED APPLICATION AREA
HG
ADJ
0
RADJp connected
to ground
P-sub
140
3.3 V
0
1(1)
1
N-sub
P-sub
70
RADJp connected
to ground
240
5 V
1(1)
1
N-sub
120
Note
1. Logic 1 or not connected.
Table 2 Speed and laser modes; note 1
MODE
DEFAULT
VALUE(2)
PIN
SPEED
LASER
SINGLE
DOUBLE
on
X(3)
1
off
X(3)
0
LS
1
1
1
X(3)
0
X(3)
LDON
Notes
1. 1 = HIGH voltage (VDD); 0 = LOW voltage (GND); X = don’t care.
2. If not connected.
3. X = don’t care.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDD
PARAMETER
supply voltage
CONDITIONS
MIN.
MAX.
UNIT
−
−
8
V
Pmax
Tstg
maximum power dissipation
storage temperature
300
mW
−65
+150
°C
Tamb
operating ambient temperature
TDA1300T
−40
−40
−2
+85
+70
+2
°C
°C
kV
kV
TDA1300TT
(1)
Ves
electrostatic handling pin 16
electrostatic handling (all other pins)
note 2
−3
+3
Notes
1. Classification A: human body model; C = 100 pF; R = 1500 Ω; Ves = ±2000 V.
Charge device model: C = 200 pF; L = 2.5 µH; R = 0 Ω; Ves = 250 V.
2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
1997 Jul 15
6
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
TDA1300T
60
K/W
K/W
TDA1300TT
128
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality
Reference Handbook”. The handbook can be ordered using the code 9397 750 00192.
CHARACTERISTICS
VDD = 3.3 V; VDDL = 2.5 V; Tamb = 25 °C; RADJ = 48 kΩ; HG = logic 1; LS = logic 1; with an external low-pass filter
(Rext = 750 Ω; Cext = 47 pF) connected at the RFE output pin.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDD
VDD
VDDL
P
supply current
laser off
−
7
−
mA
amplifier supply voltage
laser control supply voltage
power dissipation
3
−
5.5
5.5
−
V
2.5
−
V
laser off; VDD = 3 V
−
20
mW
Diode current amplifiers (n = 1 to 6; m = 1 to 6)
Ii(d)
diode input current
note 1
−
−
10
−
µA
In(i)(eq)
Vi(d)
equivalent noise input current
diode input voltage
−
1
pA/√Hz
Ii(d) = 1.67 µA
−
0.9
−
−
V
V
Vo(d)
Gd(n)
diode output voltage
diode current gain
−0.2
1.43
VDD − 1
Ii(d) = 1.67 µA;
1.55
1.67
Vo(d(n)) = 0 V; note 2
IO(d)
Zo(d)
diode offset current
output impedance
3 dB bandwidth
Ii(central) = Ii(satellite) = 0;
note 3
−
−
−
100
nA
Ii(d) = 1.67 µA;
500
−
kΩ
Vo(d(n)) = 0 V
B
Ii(d) = 1.67 µA
50
68
−
kHz
%
Gmm
mismatch in gain between
amplifiers
Ii(d) = 1.67 µA;
Vo(d(n)) = Vo(d(m))
−
−
3
1997 Jul 15
7
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Data amplifier; equalized single and double speed
VO(RF)
RRF
DC output voltage
transresistance
Ii(central) = 0
−
0.3
−
V
N-sub monitor mode
(low gain); note 3
56
70
84
kΩ
kΩ
kΩ
kΩ
N-sub monitor mode
(high gain); note 3
96
120
140
240
144
168
285
P-sub monitor mode
(low gain); note 4
112
200
P-sub monitor mode
(high gain); note 4
VO(RF)(max) maximum output voltage
note 5
−
−
V
−
−
−
−
−
−
−
DD − 1.2
V
SRRF
Zo(RF)
td(eq)
td(f)
RF slew rate
VSR = 1 V (peak-to-peak)
fi = 1 MHz
−
6
V/µs
Ω
RF output impedance
equalization delay
flatness delay (Φ/ω)
−
100
320
10
5
−
ns
LS = 1; note 6
LS = 0; note 6
note 6
−
ns
−
ns
G/G
BRF
data amplifier gain ratio
4.5
3
6
dB
MHz
unequalized output bandwidth Ii(d) = 1.67 µA
5
Control pins LDON, LS and HG (with 47 kΩ internal pull-up resistor)
VIL
VIH
IIL
LOW level input voltage
HIGH level input voltage
LOW level input current
−0.2
−
−
−
+0.5
V
VDD − 1
VDD + 0.2
100
V
−
µA
Laser output
Vo(L)
output voltage
Io(L) = 100 mA
−0.2
−
−
V
DDL − 0.7 V
Io(L)
output current
−
−100
mA
slew rate output current
CL = 1 nF (see Fig.8)
−
3.4
−
mA/µs
∆Io(L)/∆t
Monitor diode input
Vref
virtual reference voltage
N-sub monitor mode
N-sub monitor mode
P-sub monitor mode
P-sub monitor mode
N-sub monitor mode
N-sub monitor mode
130
−
150
1
170
−
mV
nA
V
IL
leakage current
Vi(mon)
Ii(mon)
∆T
monitor input voltage
monitor input current
reference temperature drift
reference supply rejection
−
VDD − 0.7
−
−
−
2
mA
ppm
%
−
40
−
−
RSref
−
1
1997 Jul 15
8
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Reference source VADJ and laser adjustment current IADJ
Vref
∆T
reference voltage
RADJ = 48 kΩ
1.15
1.24
1.31
mV
reference temperature drift
reference supply rejection
adjustment current
−
−
−
−
−
40
−
−
ppm
%
RSref
IADJ
Zi
1
RADJ = 5.6 kΩ
RADJ = 4.8 kΩ
−
200
−
µA
kΩ
−
input impedance
1
M
multiplying factor (Imon/IADJ
)
10
−
Notes to the characteristics
1. The maximum input current is defined as the current in which the gain Gd(n) reaches its minimum. Increasing the
supply voltage to VDD = 5 V increases the maximum input current (see also Figs 4 and 5).
2. The gain increases if a larger supply voltage is used (see Fig.6).
3. Transresistance of 70 kΩ and 120 kΩ (typical) is only available in N-sub monitor mode (see Table 1).
4. Transresistance of 140 kΩ and 240 kΩ (typical) is only available in P-sub monitor mode (see Table 1).
5. Output voltage swing will be: VO(RF)(swing) = VO(RF)(max) − VO(RF)(p-p)
.
6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the
flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain
difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.
1997 Jul 15
9
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Transfer functions; see Fig.6
The equalized amplifier including Cext and Rext has the following transfer functions, where ‘RFE’ refers to equalized
output only and ‘RF’ refers to equalized and not equalized outputs.
FOR SINGLE SPEED (SP = LOGIC 1)
1 – ks2 ⁄ ω2
1 + 1 ⁄ Q × s ⁄ ωos + s2 ⁄ ω2
VRFE
1
1
os
= R RF
×
×
×
(1)
(2)
------------------------------------------------------------------------ ---------------------- -----------------------------------------
------------------
1 + s ⁄ ω1 1 + sRext × Cext
Ii(central)
os
FOR DOUBLE SPEED (SP = LOGIC 0)
V RFE
1 – ks2 ⁄ ω2
1
os
= R RF
×
×
------------------------------------------------------------------------ -----------------------------------------
------------------
Ii(central)
1 + 1 ⁄ Q × s ⁄ ωod + s2 ⁄ ω2
1 + sRext × Cext
od
The denominator forms the denominator of a Bessel low-pass filter.
Symbols used in equations (1) and (2) are explained in Table 3.
Table 3 Transresistance
SYMBOL
DESCRIPTION
internally defined
TYP.
UNIT
k
4
ωos/ω1
internally defined
1.094
Q
internally defined
0.691
ωod = 2 × ωos
RRF
internally defined
17.6 × 10−6
rad/s
see Chapter “Characteristics”
external resistor
−
Rext
750
47
Ω
Cext
external capacitor
pF
1997 Jul 15
10
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
MBG471
24
I
i(max)
(µA)
20
16
12
8
3
3.5
4
4.5
5
5.5
V
(V)
DD
↑ = test limit.
Fig.3 Maximum input current as a function of VDD
.
MBG469
40
(1)
(2)
I
o
(µA)
30
(3)
20
10
0
0
10
20
30
40
I (µA)
i
→ = test limit.
(1) Gd(n) = 1.43.
(2) VDD = 5.5 V.
(3) VDD = 3.4 V.
Fig.4 Output current as a function of input current.
11
1997 Jul 15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
MBG470
1.75
I /I
o i
(mA)
1.65
1.55
1.45
1.35
3
3.5
4
4.5
5
5.5
V
(V)
DD
↓ = test limit.
Fig.5 Gain as a function of VDD
.
MBG468
9.0
450
(1)
t
gain
(dB)
d
(ns)
7.0
5.0
3.0
1.0
400
350
300
250
(2)
(2)
(1)
200
4
−1.0
2
3
10
10
10
10
f (kHz)
(1) Single speed.
(2) Double speed.
Fig.6 Transfer of equalizer.
12
1997 Jul 15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
INTERNAL PIN CONFIGURATION
V
d
DD
V
V
DD
DD
V
DD
47 kΩ
LDON
GND
CL
HG
LS
from
LDON
circuitry
V
DD
V
V
DD
DD
I1
I2
I3
I4
I5
I6
O1
O2
O3
O4
O5
O6
RF
RFE
V
DD
V
DD
V
DDL
LO
P-sub mode
MI
ADJ
V
DD
N-sub mode
MI
MBG475
Fig.7 Equivalent internal pin diagrams.
13
1997 Jul 15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
APPLICATION INFORMATION
BM4G73
a k , f u l l p a g e w i d t h
1997 Jul 15
14
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
PACKAGE OUTLINES
SO24: plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
D
E
A
X
c
H
v
M
A
E
y
Z
24
13
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
12
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
15.6
15.2
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.61
0.014 0.009 0.60
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT137-1
075E05
MS-013AD
1997 Jul 15
15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
D
E
A
X
c
H
v
M
A
y
E
Z
13
24
Q
A
2
(A )
3
A
A
1
pin 1 index
θ
L
p
L
1
12
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
8o
0o
0.15
0.05
0.95
0.80
0.30
0.19
0.2
0.1
7.9
7.7
4.5
4.3
6.6
6.2
0.75
0.50
0.4
0.3
0.5
0.2
mm
1.10
0.65
0.25
1.0
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-06-16
95-02-04
SOT355-1
MO-153AD
1997 Jul 15
16
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
SOLDERING
Introduction
TSSOP
Wave soldering is not recommended for TSSOP
packages. This is because of the likelihood of solder
bridging due to closely-spaced leads and the possibility of
incomplete solder penetration in multi-lead devices.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Reflow soldering
Even with these conditions, do not consider wave
soldering TSSOP packages with 48 leads or more, that
is TSSOP48 (SOT362-1) and TSSOP56 (SOT364-1).
Reflow soldering techniques are suitable for all SO and
TSSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
METHOD (SO AND TSSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Repairing soldered joints
SO
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
1997 Jul 15
17
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 15
18
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
NOTES
1997 Jul 15
19
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
547027/50/03/pp20
Date of release: 1997 Jul 15
Document order number: 9397 750 01673
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