PHP83N03LT [NXP]
N-channel TrenchMOS transistor; N沟道晶体管的TrenchMOS
| 型号： | PHP83N03LT |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS transistor |
| 文件： | 总15页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP83N03LT; PHB83N03LT;
PHE83N03LT
N-channel TrenchMOS transistor
Rev. 01 — 23 January 2001
Product specification
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP83N03LT in a SOT78 (TO-220AB)
PHB83N03LT in a SOT404 (D2-PAK)
PHE83N03LT in a SOT226 (I2-PAK).
2. Features
■ Low on-state resistance
■ Fast switching.
3. Applications
■ High frequency computer motherboard DC to DC converters
c
c
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
mb
[1]
2
drain (d)
d
s
3
source (s)
mb
mounting base,
connected to
drain (d)
g
1
2 3
MBK112
2
MBB076
1
3
MBK116
MBK106
1
2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
SOT226 (I2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Phillips Electronics.
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
25
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
−
75
A
Ptot
Tj
total power dissipation
junction temperature
−
115
175
9
W
−
°C
mΩ
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
6.5
10
12
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
25
Unit
V
VDS
drain-source voltage (DC)
Tj = 25 to 175 °C
VDGR
VGS
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
Tj = 25 to 175 °C; RGS = 20 kΩ
−
25
V
−
±15
±20
V
VGSM
tp ≤ 50 µs; pulsed;
−
V
duty cycle 25%; Tj ≤ 150 °C
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
−
75
A
−
61
A
IDM
Ptot
Tstg
Tj
peak drain current
−
240
115
+175
+175
A
total power dissipation
storage temperature
−
W
°C
°C
−55
−55
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
−
−
75
A
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
240
Avalanche ruggedness
EAS non-repetitive avalanche energy
unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C
−
−
120
75
mJ
A
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD = 15 V; RGS = 50 Ω; VGS = 5 V;
starting Tj = 25 °C
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
2 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03ac97
120
P
120
Ider
110
der
(%)
(%)
100
100
90
80
70
60
50
40
80
60
40
20
0
30
20
10
0
0
20 40
60 80 100 120 140 160 180
o
T
( C)
Tmb (ºC)
mb
0
60
120
180
Ptot
ID
Pder
=
× 100%
Ider
=
× 100%
----------------------
------------------
P
I
°
°
tot(25 C)
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ad86
3
10
ID
RDSon = VDS / ID
(A)
tp = 10 µs
100 µs
2
10
1 ms
D.C.
10
10 ms
t
p
P
δ
=
T
100 ms
t
t
p
T
1
2
10
VDS (V)
1
10
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
3 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-mb) thermal resistance from junction to mounting
base
Figure 4
1.3
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
vertical in still air; SOT226 package
60
65
50
K/W
K/W
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT226 packages
7.1 Transient thermal impedance
03ad85
10
Zth(j-sp)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
0.05
0.02
t
p
P
δ
=
T
-2
10
t
single pulse
t
p
T
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
4 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
25
22
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
1
1.5
−
2
V
V
V
Tj = 175 °C
0.5
−
−
Tj = −55 °C
−
2.3
IDSS
VDS = 25 V; VGS = 0 V
Tj = 25 °C
−
−
−
0.05 10
µA
Tj = 175 °C
−
500 µA
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
10
100 nA
RDSon
drain-source on-state resistance
−
−
10
17
12
mΩ
Tj = 175 °C
20.5 mΩ
VGS = 10 V; ID = 25 A
Tj = 25 °C
−
6.5
9
mΩ
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; ID = 30 A; Figure 11
−
−
−
−
−
−
−
−
−
−
−
55
33
7
−
−
−
−
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
ID = 30 A; VDD = 15 V; VGS = 5 V; Figure 14
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
gate-source charge
gate-drain (Miller) charge
input capacitance
12.5
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
1660 −
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
590
380
9
−
−
VDD = 15 V; ID = 1 A; VGS = 10 V; RG = 6 Ω;
resistive load
20
30
95
80
14
75
60
td(off)
tf
turn-off delay time
turn-off fall time
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13
−
−
0.9
1.2
V
V
IS = 40 A; VGS = 0 V
0.95
−
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
5 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03ad87
3.5 V
03ad89
75
75
ID
(A)
60
10 V 4.5 V
VDS > ID x RDSon
ID
(A)
60
Tj = 25 ºC
45
30
15
0
45
30
15
0
3 V
175 ºC
Tj = 25 ºC
VGS = 2.5 V
VGS (V)
4
V
DS
(V)
2
0
1
2
3
0
0.4
0.8
1.2
1.6
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ad57
03ad88
2
0.06
2.5 V
RDSon
VGS = 3 V
Tj = 25 ºC
a
(Ω)
0.05
1.6
0.04
0.03
0.02
0.01
0
1.2
0.8
0.4
0
3.5 V
4.5 V
10 V
I
D (A)
T (ºC)
120 180
j
0
15
30
45
60
75
-60
0
60
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
6 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03aa33
03aa36
-1
10
2.5
V
GS(th)
I
D
(V)
max
typ
-2
-3
-4
2
(A)
10
10
10
1.5
1
min
typ
max
min
-5
10
10
0.5
0
-6
0
0.5
1
1.5
2
2.5
(V)
3
-60
-20
20
60
100
140
180
o
T ( C)
V
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ad90
4
10
90
gfs
Ciss
,
VDS > ID x RDSon
(S)
75
Coss
,
Crss
(pF)
Ciss
60
45
30
15
0
Tj = 25 ºC
175 ºC
3
Coss
10
Crss
2
10
-1
10
2
10
ID (A)
0
15
30
45
60
75
VDS (V)
1
10
Tj = 25 °C and 175 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
7 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
03ad91
03ad93
75
10
VGS = 0 V
ID = 30 A
IS
VGS
(A)
60
(V) Tj = 25 ºC
8
10 V 15 V
VDD = 5 V
45
30
6
4
2
175 ºC
Tj = 25 ºC
15
0
0
0
0
0.3
0.6
0.9
1.2
VSD (V)
Q
G (nC)
80
20
40
60
Tj = 25 °C and 175 °C; VGS = 0 V
ID = 30 A; VDD = 5 V, 10 V and 15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
8 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
P
A
A
1
q
mounting
base
D
1
D
(1)
L
L
1
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
(1)
L
e
2
A
b
D
E
L
D
1
L
1
A
c
UNIT
P
q
Q
1
1
max.
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
99-09-13
00-09-07
SOT78
3-lead TO-220AB
Fig 15. SOT78 (TO-220AB).
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
9 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.40 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-12-14
99-06-25
SOT404
Fig 16. SOT404 (D2-PAK)
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
10 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
A
A
1
E
D
1
mounting
base
D
L
1
L
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
2
max
L
L
D
D
1
A
1
b
c
E
UNIT
A
b
e
L
Q
1
1
4.5
4.1
1.40
1.27
0.9
0.7
1.3
1.0
0.7
0.4
9.65
8.65
1.5
1.1
10.3
9.7
15.0
13.5
3.30
2.79
2.6
2.2
mm
2.54
3.0
Note
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
low-profile
3-lead TO-220AB
99-05-27
99-09-13
SOT226
Fig 17. SOT226 (I2-PAK)
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
11 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
01 20010123
Product specification; initial version
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
12 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07815
© Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 01 — 23 January 2001
13 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
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(SCA71)
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 23 January 2001
14 of 15
PHP83N03LT series
Philips Semiconductors
N-channel TrenchMOS transistor
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 23 January 2001
Document order number: 9397 750 07815
相关型号：
PHP8N50
TRANSISTOR 8.8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
NXP
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