PHP83N06T,127 [NXP]
PHP83N06T;
| 型号： | PHP83N06T,127 |
| 厂家： | 
NXP |
| 描述： | PHP83N06T 局域网 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP83N06T
TrenchMOS™ Standard Level FET
Rev. 01 — 11 January 2002
Product data
M3D307
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
PHP83N06T in SOT78 (TO-220AB).
2. Features
■ TrenchMOS™ technology
■ Fast switching
■ Low on-state resistance.
3. Applications
■ Switch mode power supplies
■ Uninterruptible power supplies
■ General purpose switching.
4. Pinning information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
d
s
mb
2
drain (d)
3
source (s)
g
mb
mounting base;
connected to drain (d)
MBB076
MBK106
1
2 3
SOT78 (TO-220AB)
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
Max
60
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
-
-
-
-
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
75
A
Ptot
Tj
total power dissipation
junction temperature
166
175
W
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A
Tj = 25 °C
9
-
12
24
mΩ
mΩ
Tj = 175 °C
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
60
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
-
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
-
60
V
-
±20
75
V
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
A
-
59
A
IDM
Ptot
Tstg
Tj
peak drain current
-
240
166
+175
+175
A
total power dissipation
storage temperature
-
W
°C
°C
−55
−55
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
-
-
75
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
240
Avalanche ruggedness
EDS(AL) non-repetitive avalanche energy
unclamped inductive load; ID = 65 A;
-
211
mJ
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
2 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
03ag75
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
T
200
0
50
100
150
200
(oC)
(ºC)
T
mb
mb
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ag66
3
10
I
D
R
= V
/ I
DS D
DSon
(A)
t
= 10 µs
p
2
10
100 µs
1 ms
10
DC
10 ms
100 ms
1
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
3 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting base Figure 4
-
-
-
0.9 K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
60
-
7.1 Transient thermal impedance
03ag65
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
10
10
10
0.1
0.05
0.02
-2
-3
t
p
P
δ =
T
single pulse
t
t
p
T
t
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
4 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
60
55
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
2
1
-
3
-
4
V
V
V
Tj = 175 °C
-
Tj = −55 °C
-
4.4
IDSS
VDS = 55 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.05 10
µA
Tj = 175 °C
-
500 µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
2
100 nA
RDSon
drain-source on-state resistance
-
-
9
-
12
24
mΩ
mΩ
Tj = 175 °C
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VDD = 44 V; ID = 25 A; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω
-
-
-
-
-
-
-
-
-
-
70
10
26
-
-
-
nC
nC
nC
2230 3093 pF
510 645 pF
290 467 pF
18
90
84
68
-
-
-
-
ns
ns
ns
ns
td(off)
tf
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
-
-
-
0.85 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
62
-
-
ns
nC
Qr
140
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
5 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
03ag67
6 V
03afg69
80
80
D
10 V 7 V
T
= 25 ºC
V
> I x R
DSon
j
DS
D
I
I
D
(A)
60
(A)
60
5.5 V
40
20
0
40
20
0
5 V
175 ºC
V
= 4.5 V
T = 25 ºC
j
GS
0
0.4
0.8
1.2
1.6
2
0
2
4
6
8
V
(V)
GS
V
(V)
DS
Tj = 25 °C; tp = 300 µs
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ag68
0.02
2.4
a
R
T = 25 ºC
V = 6 V
GS
DSon
j
(Ω)
0.015
0.01
0.005
0
1.8
7 V
1.2
0.6
0
10 V
0
20
40
60
80
-60
0
60
120
180
T (oC)
I
(A)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
6 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
03aa32
03aa35
-1
-2
-3
-4
-5
-6
5
10
D
I
V
GS(th)
(A)
10
(V)
4
3
2
1
0
max
typ
min
typ
max
10
10
10
10
min
-60
0
60
120
180
0
2
4
6
T (oC)
V
GS
(V)
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ag71
4
10
C
(pF)
C
iss
3
10
C
oss
C
rss
2
10
-1
2
10
1
10
10
V
(V)
DS
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
7 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
03ag70
03ag72
80
10
V
= 0 V
V
I
= 25 A
GS
GS
D
I
S
(V)
(A)
60
T = 25 ºC
j
8
6
4
2
0
V
= 14 V
44 V
DD
40
20
0
T = 25 ºC
175 ºC
j
0
0.4
0.8
1.2
0
20
40
60
80
V
(V)
Q
(nC)
SD
G
VGS = 0 V
Tj = 25 °C; ID = 25 A
Fig 12. Reverse diode current as a function of reverse
diode voltage; typical values.
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
8 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
00-09-07
01-02-16
SOT78
3-lead TO-220AB
Fig 14. SOT78 (TO-220AB).
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
9 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
01 20020111
Product data; initial version
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
10 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
11. Data sheet status
[1]
[2]
Data sheet status
Product status
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are
stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics
sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified
use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where
malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips
Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or
performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or
warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise
specified.
9397 750 09122
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 — 11 January 2002
11 of 13
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
12 of 13
9397 750 09122
Product data
Rev. 01 — 11 January 2002
PHP83N06T
TrenchMOS™ Standard Level FET
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Transient thermal impedance . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 11 January 2002
Document order number: 9397 750 09122
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