MRF6V4300NR5 [NXP]
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V;![MRF6V4300NR5](http://pdffile.icpdf.com/pdf2/p00260/img/icpdf/MRF6V4300NBR_1567588_icpdf.jpg)
型号: | MRF6V4300NR5 |
厂家: | ![]() |
描述: | Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V |
文件: | 总15页 (文件大小:863K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Document Number: MRF6V4300N
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V4300NR1
MRF6V4300NBR1
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
•
•
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
PLASTIC
MRF6V4300NR1
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
•
•
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE--ENDED
RF /V
in GS
RF /V
out DS
RF /V
in GS
RF /V
out DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
R
θ
0.24
°C/W
JC
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(I = 150 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
50
2.5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 800 μAdc)
V
0.9
1.9
—
1.65
2.7
2.4
3.4
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 900 mAdc, Measured in Functional Test)
V
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.25
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
2.8
105
304
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 900 mA, P = 300 W, f = 450 MHz, CW
DD
DQ
out
Power Gain
G
20
22
60
24
—
-- 9
dB
%
ps
D
Drain Efficiency
Input Return Loss
η
58
IRL
—
-- 1 6
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
2
B3
V
SUPPLY
B1
L2
L4
C9
C5
C2
V
BIAS
+
R1
L1
C1 C7
C4
C8
C13
RF
C12
OUTPUT
C21 C22
C23 C24
C25 C26
Z7
Z8 Z9
Z10
Z11
Z13
C20
C19
Z12
RF
INPUT
C15
Z1
Z2
Z3
Z4
Z5
Z6
C27 C28
C11
DUT
C16
C17
C18
L5
L3
C14
C10 C6
B2
C3
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.900″ x 0.082″ Microstrip
0.115″ x 0.170″ Microstrip
0.260″ x 0.170″ Microstrip
0.380″ x 0.170″ Microstrip
0.220″ x 0.220″ Microstrip
0.290″ x 0.630″ Microstrip
0.220″ x 0.630″ Microstrip
Z8
Z9
0.380″ x 0.220″ Microstrip
0.040″ x 0.170″ Microstrip
0.315″ x 0.170″ Microstrip
0.230″ x 0.170″ Microstrip
0.390″ x 0.170″ Microstrip
0.680″ x 0.082″ Microstrip
Z10
Z11
Z12
Z13
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Fair--Rite
B1
Short Ferrite Bead
Long Ferrite Beads
2743019447
B2, B3
C1
2743021447
Fair--Rite
Kemet
TDK
47 μF, 25 V, Tantalum Capacitor
22 μF, 50 V, Chip Capacitors
1 μF, 100 V, Chip Capacitors
15 nF, 100 V, Chip Capacitors
240 pF, Chip Capacitors
9.1 pF, Chip Capacitor
T491B476M025AT
C5750JF1H226ZT
C3225JB2A105KT
C3225CH2A153JT
ATC100B241JT500XT
ATC100B9R1JT500XT
ATC100B150JT500XT
ATC100B510JT500XT
ATC100B5R6JT500XT
ATC100B4R3JT500XT
ATC100B4R7JT500XT
1812SMS--27NJLC
1812SMS--47NJLC
Copper Wire
C2, C3
C4, C5, C6, C7
TDK
C8, C9, C10
TDK
C11, C12, C13, C14, C15
ATC
C16
ATC
C17
15 pF, Chip Capacitor
ATC
C18
51 pF, Chip Capacitor
ATC
C19, C20
5.6 pF, Chip Capacitors
4.3 pF, Chip Capacitors
4.7 pF, Chip Capacitors
27 nH Inductor
ATC
C21, C22, C23, C24
ATC
C25, C26, C27, C28
ATC
L1
Coilcraft
Coilcraft
L2, L3
L4, L5
R1
47 nH Inductors
5 Turn, #18 AWG Inductors, Hand Wound
10 Ω, 1/4 W, Chip Resistor
CRCW120610R1FKEA
Vishay
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
3
B1
B3
C1
C7
C2
C4
C8
C9 C5
L2
R1
C12
C13
C15
C20 C21C22 C25C26
L1
C11
L4
L5
C16
C17
C19 C23C24 C27C28
C14
C18
L3
MRF6V4300N/NB
Rev. 1
C10 C6
C3
B2
Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
10
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
V
GS
C
rss
T
= 25°C
C
1
1
0
10
V
20
30
40
50
1
10
100
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
DS
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
10
9
8
7
6
5
4
3
2
1
23
22
21
20
19
18
V
= 3 V
GS
I
= 1350 mA
DQ
1125 mA
2.75 V
900 mA
2.63 V
2.5 V
650 mA
450 mA
V
= 50 Vdc
DD
2.25 V
120
f = 450 MHz
0
0
20
40
60
80
100
10
100
, OUTPUT POWER (WATTS) CW
600
P
DRAIN VOLTAGE (VOLTS)
out
Figure 6. DC Drain Current versus Drain Voltage
Figure 7. CW Power Gain versus Output Power
0
60
59
58
57
56
Ideal
P3dB = 56.06 dBm (403 W)
-- 5
-- 10
-- 15
-- 20
-- 25
-- 30
-- 35
-- 40
-- 45
-- 5 0
-- 5 5
-- 6 0
V
= 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
DD
Two--Tone Measurements, 100 kHz Tone Spacing
P1dB = 55.15 dBm (327 W)
I
= 450 mA
DQ
Actual
55
54
53
52
51
50
650 mA
900 mA
1350 mA
V
= 50 Vdc, I = 900 mA
DQ
DD
f = 450 MHz
1125 mA
10
100
, OUTPUT POWER (WATTS) PEP
600
28
29
30
31
32
33
34 35
36
37
38
P , INPUT POWER (dBm)
P
in
out
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
23
22
21
20
19
18
17
16
60
T
= --30_C
85_C
C
25_C
55
50
50 V
45
45 V
40 V
35 V
V
I
= 50 Vdc
= 900 mA
DD
30 V
40
35
I
= 900 mA
f = 450 MHz
25 V
= 20 V
DQ
DQ
f = 450 MHz
V
DD
0
50
100
P
150
200
250
300 350
400
15
20
25
30
35
40
P , INPUT POWER (dBm)
, OUTPUT POWER (WATTS) CW
in
out
Figure 10. Power Gain versus Output Power
Figure 11. Power Output versus Power Input
8
7
6
5
10
10
10
10
25
24
23
80
70
60
25_C
T
= --30_C
C
G
ps
85_C
50
40
30
20
10
22
21
25_C
85_C
-- 3 0 _C
20
19
18
V
= 50 Vdc
= 900 mA
f = 450 MHz
η
DD
D
I
DQ
10
100
, OUTPUT POWER (WATTS) CW
500
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
P
out
This above graph displays calculated MTTF in hours when the device
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
is operated at V = 50 Vdc, P = 300 W, and η = 60%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
6
Z = 2 Ω
o
f = 450 MHz
Z
source
f = 450 MHz
Z
load
V
= 50 Vdc, I = 900 mA, P = 300 W CW
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
450
0.39 + j1.26
1.27 + j0.96
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
8
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
9
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
10
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
11
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
12
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
2
July 2008
Oct. 2008
Mar. 2009
•
•
•
Initial Release of Data Sheet
Added Fig. 13, MTTF versus Junction Temperature, p. 6
Corrected Z , “0.40 + j5.93” to “0.39 + j1.26” and Z
, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series
load
source
Equivalent Source and Load Impedance data table and replotted data, p. 7
3
Apr. 2010
•
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
14
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Document Number: MRF6V4300N
Rev. 3,4/2010
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