MRF6V4300NBR5_技术文档

Document Number: MRF6V4300N

Rev. 3, 4/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6V4300NR1

MRF6V4300NBR1

Designed primarily for CW large--signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance: V_DD= 50 Volts, I_DQ= 900 mA, P_out= 300 Watts,

f = 450 MHz

Power Gain — 22 dB

Drain Efficiency — 60%

10--600 MHz, 300 W, 50 V

LATERAL N--CHANNEL

SINGLE--ENDED

BROADBAND

RF POWER MOSFETs

Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

PLASTIC

MRF6V4300NR1

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

PLASTIC

MRF6V4300NBR1

PARTS ARE SINGLE--ENDED

RF /V

in GS

RF /V

out DS

RF /V

in GS

RF /V

out DS

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

V

DSS

Gate--Source Voltage

V

GS

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

T

stg

T

C

°C

(1,2)

T

J

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

1

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 83°C, 300 W CW

R

θ

0.24

°C/W

JC

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

1C (Minimum)

A (Minimum)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

I

—

110

—

10

—

μAdc

Vdc

GSS

(V = 5 Vdc, V = 0 Vdc)

GS

DS

Drain--Source Breakdown Voltage

(I = 150 mA, V = 0 Vdc)

V

(BR)DSS

D

GS

Zero Gate Voltage Drain Leakage Current

(V = 50 Vdc, V = 0 Vdc)

I

50

2.5

μAdc

mA

DSS

DS

GS

Zero Gate Voltage Drain Leakage Current

—

(V = 100 Vdc, V = 0 Vdc)

DS

GS

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 800 μAdc)

V

0.9

1.9

—

1.65

2.7

2.4

3.4

—

Vdc

GS(th)

GS(Q)

DS(on)

DS

D

Gate Quiescent Voltage

(V = 50 Vdc, I = 900 mAdc, Measured in Functional Test)

V

DD

D

Drain--Source On--Voltage

(V = 10 Vdc, I = 2 Adc)

V

0.25

GS

D

Dynamic Characteristics

Reverse Transfer Capacitance

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

—

2.8

105

304

—

pF

rss

GS

Output Capacitance

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

oss

GS

Input Capacitance

C

iss

(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

DS

GS

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 900 mA, P = 300 W, f = 450 MHz, CW

DD

DQ

out

Power Gain

G

20

22

60

24

—

-- 9

dB

%

ps

D

Drain Efficiency

Input Return Loss

η

58

IRL

—

-- 1 6

dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

2

B3

V

SUPPLY

B1

L2

L4

C9

C5

C2

V

BIAS

+

R1

L1

C1 C7

C4

C8

C13

RF

C12

OUTPUT

C21 C22

C23 C24

C25 C26

Z7

Z8 Z9

Z10

Z11

Z13

C20

C19

Z12

RF

INPUT

C15

Z1

Z2

Z3

Z4

Z5

Z6

C27 C28

C11

DUT

C16

C17

C18

L5

L3

C14

C10 C6

B2

C3

V

SUPPLY

Z1

Z2

Z3

Z4

Z5

Z6

Z7

0.900″ x 0.082″ Microstrip

0.115″ x 0.170″ Microstrip

0.260″ x 0.170″ Microstrip

0.380″ x 0.170″ Microstrip

0.220″ x 0.220″ Microstrip

0.290″ x 0.630″ Microstrip

0.220″ x 0.630″ Microstrip

Z8

Z9

0.380″ x 0.220″ Microstrip

0.040″ x 0.170″ Microstrip

0.315″ x 0.170″ Microstrip

0.230″ x 0.170″ Microstrip

0.390″ x 0.170″ Microstrip

0.680″ x 0.082″ Microstrip

Z10

Z11

Z12

Z13

PCB

Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55

r

Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic

Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Fair--Rite

B1

Short Ferrite Bead

Long Ferrite Beads

2743019447

B2, B3

C1

2743021447

Fair--Rite

Kemet

TDK

47 μF, 25 V, Tantalum Capacitor

22 μF, 50 V, Chip Capacitors

1 μF, 100 V, Chip Capacitors

15 nF, 100 V, Chip Capacitors

240 pF, Chip Capacitors

9.1 pF, Chip Capacitor

T491B476M025AT

C5750JF1H226ZT

C3225JB2A105KT

C3225CH2A153JT

ATC100B241JT500XT

ATC100B9R1JT500XT

ATC100B150JT500XT

ATC100B510JT500XT

ATC100B5R6JT500XT

ATC100B4R3JT500XT

ATC100B4R7JT500XT

1812SMS--27NJLC

1812SMS--47NJLC

Copper Wire

C2, C3

C4, C5, C6, C7

TDK

C8, C9, C10

TDK

C11, C12, C13, C14, C15

ATC

C16

ATC

C17

15 pF, Chip Capacitor

ATC

C18

51 pF, Chip Capacitor

ATC

C19, C20

5.6 pF, Chip Capacitors

4.3 pF, Chip Capacitors

4.7 pF, Chip Capacitors

27 nH Inductor

ATC

C21, C22, C23, C24

ATC

C25, C26, C27, C28

ATC

L1

Coilcraft

L2, L3

L4, L5

R1

47 nH Inductors

5 Turn, #18 AWG Inductors, Hand Wound

10 Ω, 1/4 W, Chip Resistor

CRCW120610R1FKEA

Vishay

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

3

B1

B3

C1

C7

C2

C4

C8

C9 C5

L2

R1

C12

C13

C15

C20 C21C22 C25C26

L1

C11

L4

L5

C16

C17

C19 C23C24 C27C28

C14

C18

L3

MRF6V4300N/NB

Rev. 1

C10 C6

C3

B2

Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

4

TYPICAL CHARACTERISTICS

1000

100

10

100

C

iss

C

oss

10

Measured with ±30 mV(rms)ac @ 1 MHz

= 0 Vdc

V

GS

C

rss

T

= 25°C

C

1

0

10

V

20

30

40

50

1

10

100

, DRAIN--SOURCE VOLTAGE (VOLTS)

V

, DRAIN--SOURCE VOLTAGE (VOLTS)

DS

Figure 4. Capacitance versus Drain--Source Voltage

Figure 5. DC Safe Operating Area

10

9

8

7

6

5

4

3

2

1

23

22

21

20

19

18

V

= 3 V

GS

I

= 1350 mA

DQ

1125 mA

2.75 V

900 mA

2.63 V

2.5 V

650 mA

450 mA

V

= 50 Vdc

DD

2.25 V

120

f = 450 MHz

0

20

40

60

80

100

10

100

, OUTPUT POWER (WATTS) CW

600

P

DRAIN VOLTAGE (VOLTS)

out

Figure 6. DC Drain Current versus Drain Voltage

Figure 7. CW Power Gain versus Output Power

0

60

59

58

57

56

Ideal

P3dB = 56.06 dBm (403 W)

-- 5

-- 10

-- 15

-- 20

-- 25

-- 30

-- 35

-- 40

-- 45

-- 5 0

-- 5 5

-- 6 0

V

= 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz

DD

Two--Tone Measurements, 100 kHz Tone Spacing

P1dB = 55.15 dBm (327 W)

I

= 450 mA

DQ

Actual

55

54

53

52

51

50

650 mA

900 mA

1350 mA

V

= 50 Vdc, I = 900 mA

DQ

DD

f = 450 MHz

1125 mA

10

100

, OUTPUT POWER (WATTS) PEP

600

28

29

30

31

32

33

34 35

36

37

38

P , INPUT POWER (dBm)

P

in

out

Figure 8. Third Order Intermodulation Distortion

versus Output Power

Figure 9. CW Output Power versus Input Power

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

5

TYPICAL CHARACTERISTICS

23

22

21

20

19

18

17

16

60

T

= --30_C

85_C

C

25_C

55

50

50 V

45

45 V

40 V

35 V

V

I

= 50 Vdc

= 900 mA

DD

30 V

40

35

I

= 900 mA

f = 450 MHz

25 V

= 20 V

DQ

f = 450 MHz

V

DD

0

50

100

P

150

200

250

300 350

400

15

20

25

30

35

40

P , INPUT POWER (dBm)

, OUTPUT POWER (WATTS) CW

in

out

Figure 10. Power Gain versus Output Power

Figure 11. Power Output versus Power Input

8

7

6

5

10

25

24

23

80

70

60

25_C

T

= --30_C

C

G

ps

85_C

50

40

30

20

10

22

21

25_C

85_C

-- 3 0 _C

20

19

18

V

= 50 Vdc

= 900 mA

f = 450 MHz

η

DD

D

I

DQ

10

100

, OUTPUT POWER (WATTS) CW

500

90

110

130

150

170

190

210

230

250

T , JUNCTION TEMPERATURE (°C)

J

P

out

This above graph displays calculated MTTF in hours when the device

Figure 12. Power Gain and Drain Efficiency

versus CW Output Power

is operated at V = 50 Vdc, P = 300 W, and η = 60%.

DD

out

D

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 13. MTTF versus Junction Temperature

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

6

Z = 2 Ω

o

f = 450 MHz

Z

source

f = 450 MHz

Z

load

V

= 50 Vdc, I = 900 mA, P = 300 W CW

DQ out

DD

f

Z

load

source

MHz

Ω

450

0.39 + j1.26

1.27 + j0.96

Z

=

Test circuit impedance as measured from

gate to ground.

source

=

Test circuit impedance as measured from

drain to ground.

load

Output

Matching

Network

Device

Under

Test

Input

Matching

Network

Z

source

load

Figure 14. Series Equivalent Source and Load Impedance

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

7

PACKAGE DIMENSIONS

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

8

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

9

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

10

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

11

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

12

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

13

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents to aid your design process.

Application Notes

•

AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

AN1955: Thermal Measurement Methodology of RF Power Amplifiers

AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages

AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages

Engineering Bulletins

EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

•

Electromigration MTTF Calculator

RF High Power Model

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &

Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

1

2

July 2008

Oct. 2008

Mar. 2009

•

Initial Release of Data Sheet

Added Fig. 13, MTTF versus Junction Temperature, p. 6

Corrected Z , “0.40 + j5.93” to “0.39 + j1.26” and Z

, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series

load

source

Equivalent Source and Load Impedance data table and replotted data, p. 7

3

Apr. 2010

•

Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related

“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C

in Capable Plastic Package bullet, p. 1

Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,

p. 14

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

14

How to Reach Us:

Home Page:

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Web Support:

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Information in this document is provided solely to enable system and software

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MRF6V4300NR1 MRF6V4300NBR1

Document Number: MRF6V4300N

RF Device Data

F^Rre^eve^.s^3,c⁴a^/2le⁰¹S⁰emiconductor

15


型号：	MRF6V4300NBR5
厂家：	NXP
描述：	Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
文件：	总15页 (文件大小：863K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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