MMG3010NT1 [NXP]
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 4.5 X 2.5 MM, 1.5 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOT-89, CASE 1514-02, 4 PIN;
| 型号： | MMG3010NT1 |
| 厂家： | 
NXP |
| 描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 4.5 X 2.5 MM, 1.5 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOT-89, CASE 1514-02, 4 PIN 放大器 射频 微波 功率放大器 |
| 文件： | 总15页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMG3010NT1
Rev. 5, 3/2008
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3010NT1
The MMG3010NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small-signal RF.
0-6000 MHz, 15 dB
17 dBm
Features
InGaP HBT
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
1
2
3
CASE 1514-02, STYLE 1
SOT-89
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol 900 2140 3500 Unit
Rating
Supply Voltage
Symbol
Value
Unit
V
MHz MHz
MHz
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
15
-15
-25
17
14
-17
-25
16.5
30
12
dB
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
10
in
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-22
-15
Storage Temperature Range
T
stg
-65 to +150
150
(2)
Junction Temperature
T
°C
Output Return Loss
(S22)
J
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
15.5 dBm
Third Order Output
Intercept Point
31
28
dBm
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 54 mA, T = 25°C)
CC
CC
C
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
83
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2009. All rights reserved.
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)
CC
C
Characteristic
Symbol
Min
14
—
Typ
15
Max
—
Unit
dB
Small-Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G
p
IRL
ORL
P1dB
IP3
-15
-25
17
—
dB
—
—
dB
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
—
—
dBm
dBm
dB
—
31
—
NF
—
4.5
54
—
(1)
Supply Current
I
46
—
63
—
mA
V
CC
(1)
Supply Voltage
V
5
CC
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3010NT1
RF Device Data
Freescale Semiconductor
2
Table 5. Functional Pin Description
2
Pin
Pin Function
Number
1
2
3
RF
in
Ground
RF /DC Supply
out
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
Machine Model (per EIA/JESD 22-A115)
Charge Device Model (per JESD 22-C101)
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
MMG3010NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
20
15
10
5
T = 85°C
C
25°C
−10
S11
-40°C
−20
S22
−30
V
I
= 5 Vdc
= 54 mA
CC
V
= 5 Vdc
CC
CC
−40
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
17
16
15
14
19
18
17
16
15
14
13
12
900 MHz
2140 MHz
1960 MHz
13 2600 MHz
12
3500 MHz
V
= 5 Vdc
= 54 mA
CC
11
10
V
= 5 Vdc
= 54 mA
CC
I
CC
I
CC
0.5
1
1.5
2
2.5
3
3.5
8
9
10
11
12
13
14
15
16
P
, OUTPUT POWER (dBm)
out
f, FREQUENCY (GHz)
Figure 4. Small-Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
36
100
90
80
70
60
50
40
30
20
10
0
33
30
27
24
21
V
= 5 Vdc
= 54 mA
CC
I
CC
1 MHz Tone Spacing
4
4.2
4.4
4.6
4.8
5
5.2
5.4
0
1
2
3
4
V
, COLLECTOR VOLTAGE (V)
CC
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3010NT1
RF Device Data
Freescale Semiconductor
4
50 OHM TYPICAL CHARACTERISTICS
36
33
32
33
30
31
30
29
28
27
27
24
21
V
= 5 Vdc
f = 900 MHz
CC
f = 900 MHz
1 MHz Tone Spacing
1 MHz Tone Spacing
26
−40
−20
0
20
40
60
80
100
4.9
4.95
5
5.05
5.1
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
V
, COLLECTOR VOLTAGE (V)
CC
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
5
4
3
10
10
10
−30
−40
−50
−60
V
= 5 Vdc
= 54 mA
CC
I
CC
f = 900 MHz
−70
−80
1 MHz Tone Spacing
120
125
130
135
140
145
150
6
−3
0
3
9
12
15
T , JUNCTION TEMPERATURE (°C)
J
P
, OUTPUT POWER (dBm)
out
NOTE: The MTTF is calculated with V = 5 Vdc, I = 54 mA
CC CC
Figure 10. Third Order Intermodulation versus
Output Power
Figure 11. MTTF versus Junction Temperature
−20
8
V
= 5 Vdc, I = 54 mA, f = 2140 MHz
CC
CC
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
6
4
2
0
−50
−60
−70
V
= 5 Vdc
= 54 mA
CC
I
CC
0
1
2
3
4
−3
0
3
6
9
12
15
f, FREQUENCY (GHz)
P , OUTPUT POWER (dBm)
out
Figure 12. Noise Figure versus Frequency
Figure 13. Single-Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3010NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-300 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 14. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
L1
−10
−20
−30
−40
S11
S22
C2
C1
V
= 5 Vdc
= 54 mA
CC
MMG30XX
Rev 2
I
CC
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
0.01 μF Chip Capacitors
Part Number
C0603C103J5RAC
C0603C102J5RAC
BK2125HM471-T
ERJ3GEY0R00V
Manufacturer
Kemet
C1, C2, C3
C4
L1
R1
1000 pF Chip Capacitor
470 nH Chip Inductor
0 W Chip Resistor
Kemet
Taiyo Yuden
Panasonic
MMG3010NT1
RF Device Data
Freescale Semiconductor
6
50 OHM APPLICATION CIRCUIT: 300-3600 MHz
V
SUPPLY
R1
C3
C4
Z5
L1
RF
OUTPUT
RF
INPUT
DUT
V
Z3
Z4
Z1
Z2
C1
C2
CC
Z1, Z5
Z2
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, ε = 4.1
r
Figure 17. 50 Ohm Test Circuit Schematic
20
10
0
S21
R1
C4
C3
L1
−10
−20
S11
S22
C2
C1
−30
−40
V
= 5 Vdc
= 54 mA
CC
MMG30XX
Rev 2
I
CC
300
800
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
150 pF Chip Capacitors
Part Number
C0603C151J5RAC
C0603C103J5RAC
C0603C102J5RAC
HK160856NJ-T
Manufacturer
Kemet
C1, C2
C3
0.01 μF Chip Capacitor
1000 pF Chip Capacitor
56 nH Chip Inductor
0 W Chip Resistor
Kemet
C4
Kemet
L1
Taiyo Yuden
Panasonic
R1
ERJ3GEY0R00V
MMG3010NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (V = 5 Vdc, I = 54 mA, T = 25°C, 50 Ohm System)
CC
CC
C
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
100
150
0.18961
0.18946
0.18931
0.18916
0.18900
0.18887
0.18873
0.18856
0.18844
0.18829
0.18813
0.18799
0.18783
0.18769
0.18753
0.18738
0.18723
0.18703
0.18689
0.18674
0.18657
0.18643
0.18629
0.18613
0.18599
0.18582
0.18568
0.18567
0.18569
0.18591
0.18645
0.18767
0.18855
0.19030
0.19186
0.19364
0.19581
0.19775
0.20022
0.20274
0.20483
0.20673
0.21006
0.21183
174.356
172.591
170.087
168.286
166.103
163.926
161.691
159.363
157.207
154.948
152.775
150.556
148.43
6.08599
6.06991
6.05558
6.04027
6.03125
6.01832
6.00664
5.99750
5.98612
5.97231
5.95537
5.94078
5.92660
5.90891
5.88998
5.86905
5.84578
5.82588
5.80670
5.77963
5.75495
5.72982
5.70191
5.67762
5.65132
5.62394
5.59479
5.56625
5.54822
5.52432
5.49674
5.46526
5.43646
5.40925
5.38177
5.35341
5.32341
5.29221
5.25998
5.22900
5.20224
5.16895
5.13639
5.10466
176.121
173.709
171.476
169.492
167.447
165.299
163.288
161.184
159.055
157.036
154.979
152.921
150.895
148.835
146.803
144.751
142.751
140.772
138.776
136.782
134.777
132.79
0.10045
0.10051
0.10055
0.10060
0.10065
0.10069
0.10073
0.10078
0.10085
0.10090
0.10098
0.10111
0.10103
0.10115
0.10113
0.10130
0.10126
0.10142
0.10134
0.10156
0.10146
0.10159
0.10169
0.10184
0.10183
0.10196
0.10201
0.10211
0.10220
0.10258
0.10272
0.10283
0.10301
0.10315
0.10333
0.10340
0.10356
0.10384
0.10401
0.10405
0.10413
0.10441
0.10441
0.10468
-1.147
0.01890
0.01961
0.02022
0.02108
0.02178
0.02240
0.02324
0.02417
0.02490
0.02589
0.02683
0.02784
0.02895
0.03030
0.03176
0.03328
0.03472
0.03683
0.03847
0.04077
0.04304
0.04551
0.04827
0.05112
0.05460
0.05759
0.06146
0.06306
0.06362
0.06362
0.06377
0.06570
0.06858
0.07094
0.07392
0.07711
0.08039
0.08395
0.08764
0.09155
0.09523
0.09969
0.10388
0.10812
-117.716
-119.073
-121.834
-123.647
-125.155
-127.572
-129.668
-131.224
-133.739
-135.854
-137.345
-139.784
-141.384
-143.84
-145.852
-147.52
-148.773
-150.721
-153.215
-155.358
-159.06
-162.691
-166.671
-170.497
-174.453
-178.275
178.051
174.258
170.85
-1.684
200
-2.764
250
-3.23
300
-3.883
350
-4.61
400
-5.218
450
-5.914
500
-6.577
550
-7.176
600
-7.816
650
-8.444
700
-9.124
750
146.278
144.103
142.071
140.126
138.174
136.334
134.574
132.862
131.57
-9.76
800
-10.388
-11.106
-11.715
-12.347
-13.049
-13.635
-14.317
-14.945
-15.594
-16.271
-16.958
-17.615
-18.236
-18.888
-19.552
-20.344
-20.962
-21.702
-22.327
-23.09
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
130.147
128.841
127.621
126.515
125.418
124.471
123.602
122.392
120.668
119.047
117.338
115.719
114.043
112.379
110.938
109.449
108.079
106.526
105.054
103.673
102.263
100.83
130.817
128.866
126.933
124.986
123.074
121.175
119.257
117.274
115.354
113.429
111.53
163.521
160.673
158.125
155.716
153.133
151.055
148.881
147.016
145.259
143.574
141.882
140.434
138.992
137.594
136.199
109.673
107.795
105.878
104.011
102.117
100.28
-23.804
-24.547
-25.192
-25.884
-26.62
98.422
-27.296
-28.065
-28.819
-29.517
-30.238
96.556
94.728
92.885
91.074
(continued)
MMG3010NT1
RF Device Data
Freescale Semiconductor
8
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S-Parameters (V = 5 Vdc, I = 54 mA, T = 25°C, 50 Ohm System) (continued)
CC
CC
C
S
S
S
S
22
11
21
12
f
MHz
|S
|
11
∠ φ
|S
|
21
∠ φ
|S
|
12
∠ φ
|S |
22
∠ φ
2300
2350
2400
2450
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
3050
3100
3150
3200
3250
3300
3350
3400
3450
3500
3550
3600
0.21443
0.21661
0.21882
0.22193
0.22303
0.22524
0.22731
0.22921
0.23072
0.23259
0.23443
0.23625
0.23786
0.23979
0.24125
0.24422
0.24610
0.24792
0.25072
0.25383
0.25590
0.25874
0.26159
0.26531
0.26829
0.27180
0.27525
99.385
98.005
96.635
95.395
93.907
92.5
5.07001
5.03818
5.00516
4.97224
4.93831
4.90747
4.87540
4.84438
4.81170
4.77720
4.74514
4.71210
4.68334
4.64992
4.61988
4.58846
4.55812
4.52495
4.49699
4.46681
4.43561
4.40430
4.37458
4.34458
4.31385
4.28470
4.25389
89.25
87.453
85.611
83.821
82.052
80.256
78.504
76.72
0.10472
0.10489
0.10502
0.10521
0.10527
0.10541
0.10567
0.10587
0.10582
0.10600
0.10623
0.10637
0.10648
0.10664
0.10700
0.10702
0.10736
0.10733
0.10748
0.10765
0.10784
0.10813
0.10814
0.10821
0.10846
0.10856
0.10871
-30.97
0.11217
0.11632
0.12050
0.12557
0.12957
0.13384
0.13842
0.14269
0.14690
0.15188
0.15645
0.16075
0.16529
0.16969
0.17439
0.17909
0.18404
0.18914
0.19427
0.19983
0.20478
0.21036
0.21586
0.22115
0.22678
0.23264
0.23850
134.891
133.499
132.176
130.946
129.503
128.151
126.605
125.06
-31.768
-32.469
-33.265
-34.008
-34.706
-35.467
-36.255
-37.021
-37.804
-38.579
-39.349
-40.152
-41.004
-41.819
-42.586
-43.392
-44.248
-45.078
-45.892
-46.753
-47.687
-48.565
-49.382
-50.314
-51.229
-52.108
91.106
89.599
88.26
74.931
73.147
71.382
69.615
67.904
66.078
64.334
62.607
60.863
59.115
57.356
55.612
53.877
52.133
50.384
48.649
46.916
45.167
43.44
123.585
122.036
120.364
118.48
86.873
85.515
84.122
82.84
116.779
114.827
112.861
111.23
81.448
80.072
78.711
77.547
76.337
75.174
73.947
72.848
71.738
70.666
69.68
109.114
107.101
105.076
102.924
100.877
98.897
96.818
94.763
68.707
67.687
66.773
92.769
90.836
88.858
MMG3010NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
0.58
5.33
2.54
1.27
1.27
0.86
0.64
3.86
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
Recommended Solder Stencil
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3010NT1
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
MMG3010NT1
RF Device Data
Freescale Semiconductor
11
MMG3010NT1
RF Device Data
Freescale Semiconductor
12
MMG3010NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Mar. 2007
•
•
Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS
compliant part numbers, p. 6, 7
4
5
July 2007
Mar. 2008
Replaced Case Outline 1514-01 with 1514-02, Issue D, p. 1, 11-13. Case updated to add missing
dimension for Pin 1 and Pin 3.
•
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
•
Corrected Fig. 13, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis
(ACPR) unit of measure to dBc, p. 5
•
Corrected S-Parameter table frequency column label to read “MHz” versus “GHz” and corrected
frequency values from GHz to MHz, p. 8, 9
Aug. 2009
•
Data sheet archived. Part no longer manufactured.
MMG3010NT1
RF Device Data
Freescale Semiconductor
14
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Document Number: MMG3010NT1
Rev. 5,3/2008
相关型号：
MMG3013NT1
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN
NXP
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