MMG3013NT1 [NXP]

0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN;
MMG3013NT1
型号: MMG3013NT1
厂家: NXP    NXP
描述:

0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN

放大器 射频 微波 功率放大器
文件: 总15页 (文件大小:400K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Document Number: MMG3013NT1  
Rev. 7, 2/2012  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
Broadband High Linearity Amplifier  
MMG3013NT1  
The MMG3013NT1 is a general purpose amplifier that is internally input  
matched and internally output matched. It is designed for a broad range of  
Class A, small--signal, high linearity, general purpose applications. It is  
suitable for applications with frequencies from 0 to 6000 MHz such as  
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general  
small--signal RF.  
0--6000 MHz, 20 dB  
20.5 dBm  
InGaP HBT  
Features  
Frequency: 0--6000 MHz  
P1dB: 20.5 dBm @ 900 MHz  
Small--Signal Gain: 20 dB @ 900 MHz  
Third Order Output Intercept Point: 36 dBm @ 900 MHz  
Single 5 Volt Supply  
Internally Matched to 50 Ohms  
Cost--effective SOT--89 Surface Mount Package  
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.  
1
2
3
CASE 1514--02, STYLE 1  
SOT--89  
PLASTIC  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
Characteristic  
Symbol 900 2140 3500 Unit  
MHz MHz  
MHz  
V
7
300  
CC  
CC  
Small--Signal Gain  
(S21)  
G
20  
17  
-- 1 9  
-- 9  
14.5  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
12  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1dB  
OIP3  
-- 1 7  
-- 11  
-- 1 5  
-- 1 2  
19  
Storage Temperature Range  
T
stg  
--65 to +150  
150  
(2)  
Junction Temperature  
T
J
°C  
Output Return Loss  
(S22)  
dB  
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
20.5 20.5  
dBm  
dBm  
Third Order Output  
Intercept Point  
36  
34  
32  
1. V = 5 Vdc, T = 25°C, 50 ohm system.  
CC  
A
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
42  
°C/W  
JC  
Case Temperature 89°C, 5 Vdc, 90 mA, no RF applied  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.  
Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25°C, 50 ohm system, in Freescale Application Circuit)  
CC  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Small--Signal Gain (S21)  
900 MHz  
2140 MHz  
G
19.3  
16  
20  
17  
dB  
p
Input Return Loss (S11)  
Output Return Loss (S22)  
IRL  
ORL  
P1dB  
OIP3  
NF  
80  
-- 1 7  
-- 11  
20.5  
36  
dB  
dB  
Power Output @ 1dB Compression  
Third Order Output Intercept Point  
Noise Figure  
dBm  
dBm  
dB  
4
(1)  
Supply Current  
I
90  
110  
mA  
V
CC  
(1)  
Supply Voltage  
V
5
CC  
1. For reliable operation, the junction temperature should not exceed 150°C.  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
2
Table 5. Functional Pin Description  
2
Pin  
Pin Function  
Number  
1
2
3
RF  
in  
Ground  
RF /DC Supply  
out  
1
2
3
Figure 1. Functional Diagram  
Table 6. ESD Protection Characteristics  
Test Methodology  
Class  
1A  
Human Body Model (per JESD 22--A114)  
Machine Model (per EIA/JESD 22--A115)  
Charge Device Model (per JESD 22--C101)  
A
IV  
Table 7. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD 22--A113, IPC/JEDEC J--STD--020  
1
260  
°C  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
3
50 OHM TYPICAL CHARACTERISTICS  
0
25  
20  
15  
10  
T
= 85°C  
C
S22  
25°C  
-- 1 0  
-- 2 0  
-- 3 0  
-- 4 0 °C  
S11  
V
= 5 Vdc  
CC  
V
= 5 Vdc  
CC  
-- 4 0  
0
1
2
3
4
0
1
2
3
4
f, FREQUENCY (GHz)  
f, FREQUENCY (GHz)  
Figure 2. Small--Signal Gain (S21) versus  
Frequency  
Figure 3. Input/Output Return Loss versus  
Frequency  
23  
21  
23  
22  
21  
20  
19  
18  
17  
16  
900 MHz  
19  
17  
15  
2140 MHz  
1960 MHz  
2600 MHz  
3500 MHz  
13  
11  
9
V
= 5 Vdc  
3
V
= 5 Vdc  
18  
CC  
CC  
0.5  
1
1.5  
2
2.5  
3.5  
10  
12  
14  
16  
20  
P
, OUTPUT POWER (dBm)  
f, FREQUENCY (GHz)  
out  
Figure 4. Small--Signal Gain versus Output  
Power  
Figure 5. P1dB versus Frequency  
39  
180  
160  
140  
120  
100  
80  
36  
33  
30  
27  
24  
60  
40  
V
= 5 Vdc  
CC  
20  
0
100 kHz Tone Spacing  
4
4.2  
4.4  
4.6  
4.8  
5
5.2  
5.4  
0
1
2
3
4
V
, COLLECTOR VOLTAGE (V)  
f, FREQUENCY (GHz)  
CC  
Figure 6. Collector Current versus Collector  
Voltage  
Figure 7. Third Order Output Intercept Point  
versus Frequency  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
4
50 OHM TYPICAL CHARACTERISTICS  
39  
38  
37  
36  
33  
36  
35  
34  
33  
32  
30  
27  
24  
V
= 5 Vdc  
CC  
f = 900 MHz  
1 MHz Tone Spacing  
f = 900 MHz  
1 MHz Tone Spacing  
31  
-- 4 0  
-- 2 0  
0
2 0  
4 0  
6 0  
8 0  
100  
4.9  
4.95  
5
5.05  
5.1  
T, TEMPERATURE (_C)  
V
, COLLECTOR VOLTAGE (V)  
CC  
Figure 9. Third Order Output Intercept Point  
versus Case Temperature  
Figure 8. Third Order Output Intercept Point  
versus Collector Voltage  
5
4
3
10  
10  
10  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
-- 7 0  
-- 8 0  
V
= 5 Vdc  
CC  
f = 900 MHz  
100 kHz Tone Spacing  
120  
125  
130  
135  
140  
145  
150  
14  
5
8
11  
17 20  
T , JUNCTION TEMPERATURE (°C)  
J
P
, OUTPUT POWER (dBm)  
out  
NOTE: The MTTF is calculated with V = 5 Vdc, I = 90 mA  
Figure 10. Third Order Intermodulation Distortion  
versus Output Power  
CC  
CC  
Figure 11. MTTF versus Junction Temperature  
-- 2 0  
8
V
= 5 Vdc, f = 2140 MHz  
CC  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)  
-- 3 0  
-- 4 0  
6
4
2
0
-- 5 0  
-- 6 0  
-- 7 0  
V
= 5 Vdc  
CC  
0
1
2
3
4
6
8
10  
12  
14  
16  
18  
f, FREQUENCY (GHz)  
P
, OUTPUT POWER (dBm)  
out  
Figure 12. Noise Figure versus Frequency  
Figure 13. Single--Carrier W--CDMA Adjacent  
Channel Power Ratio versus Output Power  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
5
50 OHM APPLICATION CIRCUIT: 40--800 MHz  
V
SUPPLY  
R1  
C3  
C4  
Z5  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z3  
Z4  
Z1  
Z2  
C1  
C2  
CC  
Z1, Z5  
Z2  
Z3  
0.347x 0.058Microstrip  
0.575x 0.058Microstrip  
0.172x 0.058Microstrip  
Z4  
PCB  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, ε = 4.1  
r
Figure 14. 50 Ohm Test Circuit Schematic  
30  
20  
10  
0
S21  
R1  
C4  
C3  
L1  
-- 1 0  
-- 2 0  
-- 3 0  
-- 4 0  
C2  
C1  
S22  
S11  
MMG30XX  
Rev 2  
V
= 5 Vdc  
CC  
0
200  
400  
f, FREQUENCY (MHz)  
600  
800  
Figure 15. S21, S11 and S22 versus Frequency  
Figure 16. 50 Ohm Test Circuit Component Layout  
Table 8. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
0.01 μF Chip Capacitors  
Part Number  
C0603C103J5RAC  
C0603C104J5RAC  
C0603C105J5RAC  
BK2125HM471--T  
ERJ3GEY0R00V  
Manufacturer  
Kemet  
C1, C2  
C3  
0.1 μF Chip Capacitor  
1 μF Chip Capacitor  
470 nH Chip Inductor  
0 Ω Chip Resistor  
Kemet  
C4  
Kemet  
L1  
Taiyo Yuden  
Panasonic  
R1  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
6
50 OHM APPLICATION CIRCUIT: 800--3600 MHz  
V
SUPPLY  
R1  
C3  
C4  
Z5  
L1  
RF  
OUTPUT  
RF  
INPUT  
DUT  
V
Z3  
Z4  
Z1  
Z2  
C1  
C2  
CC  
Z1, Z5  
Z2  
Z3  
0.347x 0.058Microstrip  
0.575x 0.058Microstrip  
0.172x 0.058Microstrip  
Z4  
PCB  
0.403x 0.058Microstrip  
Getek Grade ML200C, 0.031, ε = 4.1  
r
Figure 17. 50 Ohm Test Circuit Schematic  
30  
S21  
20  
10  
R1  
C4  
C3  
L1  
0
C2  
C1  
S22  
-- 1 0  
-- 2 0  
-- 3 0  
S11  
MMG30XX  
Rev 2  
V
= 5 Vdc  
CC  
800  
1200  
1600  
2000  
2400  
2800  
3200  
3600  
f, FREQUENCY (MHz)  
Figure 18. S21, S11 and S22 versus Frequency  
Figure 19. 50 Ohm Test Circuit Component Layout  
Table 9. 50 Ohm Test Circuit Component Designations and Values  
Part  
Description  
150 pF Chip Capacitors  
Part Number  
C0603C151J5RAC  
C0603C104J5RAC  
C0603C105J5RAC  
HK160856NJ--T  
Manufacturer  
Kemet  
C1, C2  
C3  
0.1 μF Chip Capacitor  
1 μF Chip Capacitor  
56 nH Chip Inductor  
0 Ω Chip Resistor  
Kemet  
C4  
Kemet  
L1  
Taiyo Yuden  
Panasonic  
R1  
ERJ3GEY0R00V  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
7
50 OHM TYPICAL CHARACTERISTICS  
Table 10. Common Emitter S--Parameters (V = 5 Vdc, T = 25°C, 50 Ohm System)  
CC  
A
S
S
S
S
22  
11  
21  
12  
f
MHz  
|S  
|
11  
∠ φ  
|S  
|
21  
∠ φ  
|S  
|
12  
∠ φ  
|S |  
22  
∠ φ  
100  
150  
0.162717  
0.160561  
0.160153  
0.157910  
0.155640  
0.152870  
0.150710  
0.148730  
0.145840  
0.143950  
0.141980  
0.140120  
0.138450  
0.137510  
0.136570  
0.134433  
0.132707  
0.131087  
0.129567  
0.128275  
0.127137  
0.125513  
0.124020  
0.122379  
0.121234  
0.120081  
0.118817  
0.116609  
0.115374  
0.113850  
0.113120  
0.112080  
0.111350  
0.110660  
0.110070  
0.109570  
0.108940  
0.107610  
0.106800  
0.106240  
0.104410  
0.103200  
0.102820  
0.101220  
171.108  
167.971  
163.027  
159.994  
156.091  
152.178  
148.189  
144.135  
140.465  
136.404  
132.557  
128.67  
124.924  
121.228  
117.62  
114.245  
110.998  
107.842  
104.859  
102.209  
99.637  
97.509  
95.409  
93.482  
91.761  
90.16  
11.479238  
11.415032  
11.337210  
11.263950  
11.200930  
11.160790  
11.096270  
11.027770  
10.957540  
10.876040  
10.785240  
10.695820  
10.604510  
10.504830  
10.400340  
10.295550  
10.186390  
10.073620  
9.965510  
9.842290  
9.725320  
9.610100  
9.485500  
9.367530  
9.251560  
9.129800  
9.011610  
8.892430  
8.772640  
8.708890  
8.598320  
8.485180  
8.379040  
8.273700  
8.167240  
8.063390  
7.958390  
7.856150  
7.751440  
7.651320  
7.553170  
7.452840  
7.354920  
7.259510  
174.775  
171.459  
168.606  
165.874  
163.101  
160.282  
157.597  
154.845  
152.097  
149.449  
146.811  
144.176  
141.59  
139.003  
136.446  
133.89  
131.409  
128.963  
126.525  
124.132  
121.744  
119.381  
117.045  
114.76  
0.069393  
0.069131  
0.068870  
0.068640  
0.068460  
0.068400  
0.068380  
0.068210  
0.068260  
0.068090  
0.068040  
0.068000  
0.067790  
0.067690  
0.067590  
0.067520  
0.067420  
0.067380  
0.067220  
0.067050  
0.066970  
0.066930  
0.066790  
0.066840  
0.066710  
0.066685  
0.066670  
0.066687  
0.066764  
0.066970  
0.067057  
0.067090  
0.067170  
0.067200  
0.067260  
0.067320  
0.067420  
0.067460  
0.067560  
0.067600  
0.067810  
0.067960  
0.067980  
0.068230  
--1.296  
--1.887  
--2.702  
--3.308  
--3.908  
--4.523  
--5.134  
--5.794  
--6.391  
--6.918  
--7.57  
0.106264  
0.112247  
0.118610  
0.127240  
0.134977  
0.144410  
0.154090  
0.164250  
0.174550  
0.185240  
0.195510  
0.206040  
0.216910  
0.227810  
0.238140  
0.248290  
0.258400  
0.268360  
0.277810  
0.287510  
0.297010  
0.306110  
0.314950  
0.323700  
0.332570  
0.339940  
0.348650  
0.356290  
0.360061  
0.364627  
0.369410  
0.374600  
0.380650  
0.386070  
0.391590  
0.396600  
0.402290  
0.407630  
0.412720  
0.418620  
0.423200  
0.428690  
0.433410  
0.438440  
--133.221  
--134.322  
--135.449  
--136.522  
--137.648  
--138.763  
--139.895  
--140.998  
--142.085  
--143.132  
--144.211  
--145.338  
--146.461  
--147.659  
--148.902  
--150.118  
--151.55  
--153.097  
--154.786  
--156.435  
--158.367  
--160.411  
--162.397  
--164.386  
--166.443  
--168.554  
--170.582  
--172.695  
--174.724  
--177.374  
--179.169  
179.129  
177.406  
175.7  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
--8.199  
--8.743  
--9.285  
--9.831  
--10.415  
--10.866  
--11.449  
--11.901  
--12.399  
--12.949  
--13.483  
--13.882  
--14.46  
--14.928  
--15.375  
--15.818  
--16.365  
--16.815  
--17.493  
--17.963  
--18.477  
--18.984  
--19.462  
--19.938  
--20.42  
--20.891  
--21.389  
--21.917  
--22.347  
--22.888  
--23.444  
--23.91  
--24.487  
700  
750  
800  
850  
900  
950  
1000  
1050  
1100  
1150  
1200  
1250  
1300  
1350  
1400  
1450  
1500  
1550  
1600  
1650  
1700  
1750  
1800  
1850  
1900  
1950  
2000  
2050  
2100  
2150  
2200  
2250  
112.507  
110.251  
108.055  
105.876  
103.703  
101.399  
99.278  
97.137  
95.075  
93.021  
90.99  
88.664  
87.326  
86.23  
80.021  
77.212  
75.253  
72.833  
70.651  
68.704  
66.752  
64.808  
63.28  
174.044  
172.328  
170.798  
169.234  
167.75  
88.942  
86.97  
84.972  
83.012  
81.047  
79.114  
61.916  
60.415  
59.082  
57.787  
56.94  
166.176  
164.723  
163.19  
77.223  
75.325  
73.436  
161.75  
55.6  
160.241  
(continued)  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
8
50 OHM TYPICAL CHARACTERISTICS  
Table 10. Common Emitter S--Parameters (V = 5 Vdc, T = 25°C, 50 Ohm System) (continued)  
CC  
A
S
S
S
S
22  
11  
21  
12  
f
MHz  
|S  
|
11  
∠ φ  
|S  
|
21  
∠ φ  
|S  
|
12  
∠ φ  
|S |  
22  
∠ φ  
2300  
2350  
2400  
2450  
2500  
2550  
2600  
2650  
2700  
2750  
2800  
2850  
2900  
2950  
3000  
3050  
3100  
3150  
3200  
3250  
3300  
3350  
3400  
3450  
3500  
3550  
3600  
0.100260  
0.098910  
0.097870  
0.096530  
0.095360  
0.094140  
0.093150  
0.092180  
0.091130  
0.090470  
0.089850  
0.088790  
0.088180  
0.087640  
0.086490  
0.087170  
0.086660  
0.086130  
0.086330  
0.086760  
0.086510  
0.086820  
0.087230  
0.087680  
0.087990  
0.088730  
0.089200  
54.54  
7.163530  
7.072340  
6.980770  
6.892310  
6.802480  
6.719330  
6.634260  
6.554070  
6.471630  
6.392370  
6.314980  
6.238550  
6.166300  
6.088480  
6.020040  
5.950380  
5.881680  
5.814190  
5.749680  
5.684930  
5.619060  
5.557890  
5.498110  
5.437290  
5.376810  
5.319060  
5.259990  
71.577  
69.734  
67.882  
66.059  
64.259  
62.461  
60.65  
0.068190  
0.068480  
0.068550  
0.068780  
0.068940  
0.069120  
0.069290  
0.069490  
0.069610  
0.069850  
0.070210  
0.070340  
0.070550  
0.070750  
0.071030  
0.071280  
0.071610  
0.071920  
0.072150  
0.072340  
0.072640  
0.072800  
0.073130  
0.073490  
0.073710  
0.073970  
0.074200  
--24.984  
--25.485  
--26.108  
--26.694  
--27.154  
--27.644  
--28.295  
--28.971  
--29.561  
--30.111  
--30.649  
--31.402  
--32.044  
--32.738  
--33.388  
--34.097  
--34.666  
--35.528  
--36.302  
--36.943  
--37.799  
--38.546  
--39.319  
--40.144  
--40.92  
0.442830  
0.447010  
0.451420  
0.457800  
0.460110  
0.464930  
0.469350  
0.473140  
0.477010  
0.481850  
0.485260  
0.489440  
0.494180  
0.497180  
0.501590  
0.505070  
0.509400  
0.514040  
0.518490  
0.523620  
0.525880  
0.530230  
0.534740  
0.538080  
0.542580  
0.546650  
0.550400  
158.869  
157.463  
155.974  
154.6  
53.312  
52.576  
51.814  
50.69  
153.074  
151.617  
150.014  
148.442  
146.825  
145.214  
143.56  
49.939  
49.177  
48.019  
47.141  
46.394  
45.454  
44.657  
44.083  
43.291  
42.549  
42.041  
41.37  
58.859  
57.062  
55.299  
53.505  
51.724  
50.021  
48.207  
46.489  
44.764  
43.022  
41.268  
39.547  
37.829  
36.098  
34.368  
32.629  
30.936  
29.22  
141.782  
140.078  
138.23  
136.357  
134.738  
132.754  
130.875  
128.954  
126.955  
124.995  
123.081  
121.057  
119.195  
117.253  
115.36  
41.387  
41.301  
41.239  
41.638  
41.81  
42.12  
42.727  
43.424  
44.082  
45.12  
27.529  
25.838  
--41.673  
--42.467  
113.481  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
9
1.7  
7.62  
0.305 diameter  
2.49  
3.48  
0.58  
5.33  
2.54  
1.27  
1.27  
0.86  
0.64  
3.86  
NOTES:  
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE  
USED IN PCB LAYOUT DESIGN.  
Recommended Solder Stencil  
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS  
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.  
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN  
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO  
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL  
AND RF PERFORMANCE.  
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM  
PITCH.  
Figure 20. Recommended Mounting Configuration  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
10  
PACKAGE DIMENSIONS  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
11  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
12  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
13  
PRODUCT DOCUMENTATION AND SOFTWARE  
Refer to the following documents and software to aid your design process.  
Application Notes  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3100: General Purpose Amplifier and MMIC Biasing  
Software  
.s2p File  
Development Tools  
Printed Circuit Boards  
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &  
Tools tab on the part’s Product Summary page to download the respective tool.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
4
Mar. 2007  
Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS  
compliant part numbers, p. 6, 7  
5
6
July 2007  
Mar. 2008  
Replaced Case Outline 1514--01 with 1514--02, Issue D, p. 1, 11--13. Case updated to add missing  
dimension for Pin 1 and Pin 3.  
Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,  
p. 1  
Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis  
(ACPR) unit of measure to dBc, p. 5  
Corrected S--Parameter table frequency column label to read “MHz” versus “GHz” and corrected  
frequency values from GHz to MHz, p. 8, 9  
7
Feb. 2012  
Corrected temperature at which ThetaJC is measured from 25°C to 89°C and added “no RF applied” to  
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no  
RF signal applied, p. 1  
Table 6, ESD Protection Characterization, removed the word “Minimum” after the ESD class rating. ESD  
ratings are characterized during new product development but are not 100% tested during production. ESD  
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive  
devices, p. 3  
Removed I bias callout from applicable graphs and Table 10, Common Emitter S--Parameters heading  
CC  
as bias is not a controlled value, p. 4--9  
Added .s2p File and printed Circuit Boards availability to Product Software, p. 14  
MMG3013NT1  
RF Device Data  
Freescale Semiconductor, Inc.  
14  
How to Reach Us:  
Home Page:  
www.freescale.com  
Web Support:  
http://www.freescale.com/support  
USA/Europe or Locations Not Listed:  
Freescale Semiconductor, Inc.  
Technical Information Center, EL516  
2100 East Elliot Road  
Tempe, Arizona 85284  
1--800--521--6274 or +1--480--768--2130  
www.freescale.com/support  
Europe, Middle East, and Africa:  
Freescale Halbleiter Deutschland GmbH  
Technical Information Center  
Schatzbogen 7  
81829 Muenchen, Germany  
+44 1296 380 456 (English)  
+46 8 52200080 (English)  
+49 89 92103 559 (German)  
+33 1 69 35 48 48 (French)  
www.freescale.com/support  
Information in this document is provided solely to enable system and software  
implementers to use Freescale Semiconductor products. There are no express or  
implied copyright licenses granted hereunder to design or fabricate any integrated  
circuits or integrated circuits based on the information in this document.  
Freescale Semiconductor reserves the right to make changes without further notice to  
any products herein. Freescale Semiconductor makes no warranty, representation or  
guarantee regarding the suitability of its products for any particular purpose, nor does  
Freescale Semiconductor assume any liability arising out of the application or use of  
any product or circuit, and specifically disclaims any and all liability, including without  
limitation consequential or incidental damages. “Typical” parameters that may be  
provided in Freescale Semiconductor data sheets and/or specifications can and do  
vary in different applications and actual performance may vary over time. All operating  
parameters, including “Typicals”, must be validated for each customer application by  
customer’s technical experts. Freescale Semiconductor does not convey any license  
under its patent rights nor the rights of others. Freescale Semiconductor products are  
not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life,  
or for any other application in which the failure of the Freescale Semiconductor product  
could create a situation where personal injury or death may occur. Should Buyer  
purchase or use Freescale Semiconductor products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all  
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  
directly or indirectly, any claim of personal injury or death associated with such  
unintended or unauthorized use, even if such claim alleges that Freescale  
Japan:  
Freescale Semiconductor Japan Ltd.  
Headquarters  
ARCO Tower 15F  
1--8--1, Shimo--Meguro, Meguro--ku,  
Tokyo 153--0064  
Japan  
0120 191014 or +81 3 5437 9125  
support.japan@freescale.com  
Asia/Pacific:  
Freescale Semiconductor China Ltd.  
Exchange Building 23F  
No. 118 Jianguo Road  
Chaoyang District  
Beijing 100022  
China  
+86 10 5879 8000  
support.asia@freescale.com  
Semiconductor was negligent regarding the design or manufacture of the part.  
For Literature Requests Only:  
Freescale Semiconductor Literature Distribution Center  
1--800--441--2447 or +1--303--675--2140  
Fax: +1--303--675--2150  
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.  
All other product or service names are the property of their respective owners.  
Freescale Semiconductor, Inc. 2005--2008, 2012. All rights reserved.  
LDCForFreescaleSemiconductor@hibbertgroup.com  
Document Number: MMG3013NT1  
Rev. 7,2/2012

相关型号:

MMG3013NT1_08

Heterojunction Bipolar Transistor Technology (InGaP HBT)
FREESCALE

MMG3013NT1_12

Heterojunction Bipolar Transistor
FREESCALE

MMG3014N

2110MHz - 2170MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT-89, 3 PIN
NXP

MMG3014NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)
FREESCALE

MMG3014NT1_08

Heterojunction Bipolar Transistor Technology (InGaP HBT)
FREESCALE

MMG3015NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)
FREESCALE

MMG3015NT1_12

Heterojunction Bipolar Transistor
FREESCALE

MMG30271B

Driver or Pre--driver General Purpose Amplifier
NXP

MMG30271BT1

Driver or Pre--driver General Purpose Amplifier
NXP

MMG30301BT1

Telecom Circuit
NXP

MMG38151B

Broadband Amplifier
NXP

MMG38151BT1

Broadband Amplifier
NXP