MMG3014N [NXP]
2110MHz - 2170MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT-89, 3 PIN;
| 型号： | MMG3014N |
| 厂家： | 
NXP |
| 描述： | 2110MHz - 2170MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT-89, 3 PIN 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总10页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Available at http://freescale.com/RFMMIC > Design Support
> Reference Designs
Freescale Semiconductor
Technical Data
Rev. 0, 2/2012
RF Power Reference Design
MMG3014N
LTE 750 MHz Power Amplifier Lineup
Driving
MRFG35010AN
LTE
InGaP HBT Driving GaAs pHEMT
Amplifier Lineup Characteristics
This reference design provides a high-gain amplifier solution, specifically
tuned for LTE and W--CDMA base station applications occupying the 725 to
760 MHz frequency band.
•
•
•
•
•
•
Typical Single--Carrier LTE Performance
GPA: VCC = 5 Vdc, ICC = 132 mAdc
Power GaAs FET: VDD = 12 Vdc, IDQ = 180 mA, VGS = --0.82 Vdc
Output Power: 1.0 Watts Avg.
10 MHz Channel Bandwidth @ 10 MHz Offset
Input Signal PAR = 10.5 dB @ 0.01% Probability on CCDF,
IQ Magnitude Clipping
725--760 MHz, 1.0 W AVG., 12 V
LTE AMPLIFIER LINEUP
REFERENCE DESIGN
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
740 MHz
750 MHz
760 MHz
(dB)
36.5
36.4
36.4
(%)
23.4
24.1
24.8
9.0
9.0
8.9
--40.3
--40.4
--40.4
•
•
Output Capable of Handling 3:1 VSWR, @ 12 Vdc, 750 MHz,
10 Watts CW Output Power
Designed for Digital Predistortion Error Correction Systems
MMG3014N/MRFG35010AN REFERENCE DESIGN
The amplifier lineup consists of a GaAs HBT pre--driver
document. Contact your local Freescale sales office or
authorized Freescale distributor for additional information on
reference design board availability for hands--on assessment
and customization.
and GaAs pHEMT driver amplifier, tuned for optimal gain,
efficiency, linearity and dynamic range performance at
1.0 Watts average output power. Performance
characteristics of the reference design are provided in this
V
DD
V
V
GS
CC
RF
OUTPUT
RF
INPUT
MRFG35010AN
MMG3014N
Matching
Input
Matching
Output
Matching
Matching
Figure 1. Functional Block Diagram
© Freescale Semiconductor, Inc., 2012. All rights reserved.
AMPLIFIER LINEUP TEST CONDITIONS
AMPLIFIER LINEUP — ALTERNATE
CHARACTERISTICS
Typical Single--Carrier W--CDMA Performance
•
•
GPA: VCC = 5 Vdc, ICC = 132 mAdc
•
•
Power GaAs FET: VDD = 12 Vdc, IDQ = 180 mA,
GS = --0.82 Vdc
Measured in 3.84 MHz Channel Bandwidth
@ 5 MHz Offset
V
•
•
Output Power: 1.0 Watts Avg.
IQ Magnitude Clipping
•
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
G
η
Output PAR
(dB)
ACPR
(dBc)
Note: Refer to Appendix A for Power--up Sequence
ps
D
Frequency
740 MHz
750 MHz
760 MHz
(dB)
36.4
36.3
36.3
(%)
23.8
24.5
25.2
8.3
8.2
8.1
--40.9
--41.0
--41.0
REFERENCE DESIGN HARDWARE
Figure 2. Performance Optimized Hardware
HEATSINKING
When operating this fixture it is important that adequate heatsinking
is provided for the device. Excessive heating of the device may
degrade the values of the included measurements and continued
operation at excessive temperatures may destroy the device.
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
2
-- V
+V
GS
DS
C11
C12
C8
C7
C13
C14
C9
C6
C5
C4
C10
C15
C3
C24
C25
L2
C16
Q2
L1
R1
C2
R2
C18
C21
Q1
C1
C23
C22
C19 C20
C17
MMG3014N/MRFG35010AN
Rev. 1
Figure 3. MMG3014N Driving MRFG35010AN Board Layout
Table 1. MMG3014N Driving MRFG35010AN Test Circuit Component Designations and Values
Part
Description
100 pF Chip Capacitors
22 pF Chip Capacitor
Part Number
ATC600F101JT250XT
ATC600F220JT250XT
ATC100A100JP150XT
ATC100A101JP150XT
ATC100B101JP500XT
ATC100B102JP500XT
CDR33BX104AKYS
ATC200B393KP50XT
T491X226K035AT
ATC600F120JT250XT
ATC600F1R8BT250XT
ATC600F8R2BT250XT
C0805C221J5GAC
06035J5R6BBS
Manufacturer
C1, C18
C2
ATC
ATC
ATC
ATC
ATC
ATC
C3, C16
C4, C15
C5, C14
C6, C13
C7, C12
C8, C11
C9, C10
C17
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1 μF Chip Capacitors
39K pF Chip Capacitor
22 μF, 35 V Tantalum Capacitors
12 pF Chip Capacitor
Kemet
ATC
Kemet
ATC
C19
1.8 pF Chip Capacitor
8.2 pF Chip Capacitor
220 pF Chip Capacitors
5.6 pF Chip Capacitor
2.2 μF, 16 V Tantalum Capacitor
0.1 μF Chip Capacitor
4.7 nH Chip Inductor
ATC
C20
ATC
C21, C23
C22
Kemet
AVX
C24
T491A225K016AS
C0603C104J5RAC
LL1608--FH4N7S
Kemet
Kemet
TOKO
TOKO
Freescale
Freescale
KOA Speer
Newark
Rogers
C25
L1
L2
10 nH Chip Inductor
LL1608--FH10NJ
Q1
Power FET GaAs Transistor
InGaP HBT GPA
MRFG35010ANT1
MMG3014NT1
Q2
R1
51 Ω, 1/8 W Chip Resistor
5.1 Ω, 1/4 W Chip Resistor
RM73BIJT510J
R2
CRCW08055R10JNEA
RO4350B
PCB
0.020″, ε = 3.5
r
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS — 10 MHz LTE Test Signal
(Single--Carrier LTE, Test Model 1.1, 10 MHz, PAR = 10.5 dB @ 0.01% Probability on CCDF)
38
37
40
740 MHz
750 MHz
750 MHz
30
760 MHz
760 MHz
36
35
20
10
740 MHz
= 5 Vdc
V
= 5 Vdc
= 132 mA
= 12 Vdc
CC
V
I
CC
I
CC
= 132 mA
CC
V
DD
V
= 12 Vdc
= 180 mA
= --0.82 Vdc
DD
I
V
= 180 mA
DQ
I
DQ
= --0.82 Vdc
GS
V
GS
34
0
14
19
24
, OUTPUT POWER (dBm)
29
34
14
19
24
P , OUTPUT POWER (dBm)
out
29
34
P
out
Figure 4. Power Gain versus Output Power
Figure 5. Drain Efficency versus Output Power
-- 3 0
-- 3 6
11
10
740 MHz
750 MHz
740 MHz
750 MHz
760 MHz
-- 4 2
-- 4 8
9
8
V
= 5 Vdc
= 132 mA
= 12 Vdc
V
= 5 Vdc
CC
= 132 mA
= 12 Vdc
DD
CC
I
I
CC
CC
V
V
DD
I
V
= 180 mA
I
V
= 180 mA
DQ
DQ
760 MHz
19
= --0.82 Vdc
= --0.82 Vdc
19
GS
GS
-- 5 4
14
7
24
, OUTPUT POWER (dBm)
29
34
14
24
29
34
P
P
, OUTPUT POWER (dBm)
out
out
Figure 6. Adjacent Channel Power versus
Output Power
Figure 7. Peak--to--Average Ratio versus
Output Power
10 MHz LTE TEST SIGNAL
100
10
1
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
10 MHz
Channel BW
Input Signal
0.1
0.01
-- 5 0
-- 6 0
LTE. ACPR Measured in 10 MHz
+ACPR in 10 MHz
Integrated BW
--ACPR in 10 MHz
Integrated BW
Channel Bandwidth @ ±10 MHz Offset.
Input Signal PAR = 10.5 dB @ 0.01%
Probability on CCDF
-- 7 0
-- 8 0
0.001
0
3
6
9
12
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 8. CCDF LTE IQ Magnitude Clipping,
Single--Carrier Test Signal
--25 -- 2 0 -- 1 5 -- 1 0 -- 5
0
5
10
15
20 25
f, FREQUENCY (MHz)
Figure 9. Single--Carrier LTE Spectrum
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — 8.5 dB Input PAR W--CDMA Test Signal
(Single--Carrier W--CDMA, 3GPP Test Model 1, 64 DPCH, PAR = 8.5 dB @ 0.01% Probability on CCDF)
38
40
30
740 MHz
740 MHz
750 MHz
37
760 MHz
36
35
20
10
760 MHz
750 MHz
= 5 Vdc
V
= 5 Vdc
= 132 mA
= 12 Vdc
CC
V
I
CC
I
CC
= 132 mA
CC
V
DD
V
= 12 Vdc
= 180 mA
= --0.82 Vdc
DD
I
V
= 180 mA
DQ
I
DQ
= --0.82 Vdc
GS
V
GS
34
0
14
19
24
, OUTPUT POWER (dBm)
29
34
14
19
24
P , OUTPUT POWER (dBm)
out
29
34
P
out
Figure 10. Power Gain versus Output Power
Figure 11. Drain Efficency versus Output Power
-- 3 0
-- 3 6
10
9
760 MHz
750 MHz
740 MHz
750 MHz
-- 4 2
-- 4 8
8
7
740 MHz
V
I
= 5 Vdc
= 132 mA
= 12 Vdc
= 180 mA
= --0.82 Vdc
V
I
= 5 Vdc
= 132 mA
= 12 Vdc
= 180 mA
= --0.82 Vdc
CC
CC
CC
CC
V
I
V
I
DD
DD
DQ
DQ
760 MHz
19
V
V
GS
GS
-- 5 4
6
14
24
, OUTPUT POWER (dBm)
29
34
14
19
24
29
34
P
P
, OUTPUT POWER (dBm)
out
out
Figure 12. Adjacent Channel Power versus
Output Power
Figure 13. Peak--to--Average Ratio versus
Output Power
8.5 dB W--CDMA TEST SIGNAL
100
10
1
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 8.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
-- 7 0
-- 8 0
0.001
0
3
6
9
12
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 14. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 15. Single--Carrier W--CDMA Spectrum
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
5
CHARACTERISTICS — CW Test Signal
40
30
0
S21
S11
-- 7
20
10
-- 1 4
-- 2 1
-- 2 8
S22
P
= --25 dBm
600
in
0
500
700
800
f, FREQUENCY (MHz)
Note: Reference Impedance = 50 Ω
900
1000
1100
1200
Figure 16. Small--Signal Gain, Input and Output Return
Loss versus Frequency
39
60
45
f = 750 MHz
38
η
D
37
36
30
15
Gain
35
0
20
25
30
, OUTPUT POWER (dBm)
35
40
P
out
Figure 17. Power Gain and Drain Efficency versus
Output Power
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
6
APPENDIX A
Power--Up Sequence
The MMG3014N and MRFG35010AN devices are biased
separately. Apply bias as follows:
1. Terminate the RF input and output with 50
impedances: no RF signal applied.
Ω
2. Apply --1.5 Vdc supply across the --VGS (negative gate
voltage) and GND terminals of MRFG35010AN.
3. Apply +12 Vdc supply across the +VDS (positive drain
voltage) and GND terminals of MRFG35010AN.
4. Increase the --VGS value to set the IDQ (drain
quiescent current) to 180 mA. --VGS should be
approximately --0.82 Vdc.
5. Apply +5 V supply to VCC terminal of MMG3014N.
6. ICC should be around 132 mA.
7. Apply RF signal to input terminal and set signal level to
--20 dBm.
Power--Down Sequence
1. Remove RF signal from input terminal.
2. Remove VCC from MMG3014N.
3. Adjust MRFG35010AN’s --VGS to --1.5 Vdc.
4. IDQ should be near zero.
5. Remove +VDS from MRFG35010AN.
6. Remove --VGS from MRFG35010AN.
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
7
APPENDIX B
Tuning Tips
•
Adjusting the value or location of C19 and C20 will have
significant effect on ACPR, output return loss and
efficiency.
•
Adjusting the values or locations of C17 on
MRFG35010AN input will have significant impact on gain
and input return loss.
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
8
APPENDIX C
Simulation Models
Download simulation models of MMG3014N and
MRFG35010AN from:
http://www.freescale.com/RFMMIC (click on the “Design
Support” tab)
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
9
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Available at http://freescale.com/RFMMIC > Design Support > Reference Designs
Rev. 0, 2/2012
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