BZA109TS [NXP]
9-fold ESD Transient Suppressor; 9倍的ESD瞬态抑制器
| 型号： | BZA109TS |
| 厂家： | 
NXP |
| 描述： | 9-fold ESD Transient Suppressor |
| 文件： | 总12页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZA109TS
9-fold ESD Transient Suppressor
1997 Sep 08
Preliminary specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
FEATURES
DESCRIPTION
• ESD rating > 8 kV, according to IEC1000-4-2
• SOT339 surface mount package
• Common anode configuration
Monolithic silicon zener diode in a SOT339-1 package
(SO20) for 9 bit wide undershoot/overshoot clamping,
combined with fast ESD transient suppression.
• Non-clamping range 0 - 6.8 V,
negative clamping range <0.5 V,
positive clamping range >6.8 V.
APPLICATIONS
• Computer and peripherals
• Audio and video equipment
• Communication systems
• Medical equipment.
PINNING SOT339-1
20
11
book, halfpage
1
10
Top view
MBK198
Fig.1 Symbol and pinning.
Fig.2 Simplified outline.
1997 Sep 08
2
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
LIMITING VALUES (per diode)
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
reverse current
CONDITIONS
DC; Tamb = 25 °C
MIN.
MAX.
UNIT
mA
IZ
−
−
−
−
20
100
100
4.5
IF
forward current
DC; Tamb = 25 °C
mA
mA
A
IFT
IFSM
IZSM
Ptot
Tstg
Tj
feed-through current
peak forward current
peak reverse current
total power dissipation
storage temperature
junction temperature
DC; Tamb = 25 °C; note 1
tp = 1 ms; square wave
tp = 1 ms; square wave
Tamb = 25 °C; note 2
2.5
A
−
0.95
+150
+150
W
−65
−65
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
135
UNIT
Rth j-a
thermal resistance from junction to ambient; note 2
K/W
Note to the Limiting values and Thermal characteristics
1. Current is flowing from input to corresponding output.
2. One or more diodes loaded.
ELECTRICAL CHARACTERISTICS (per diode)
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
reverse voltage
CONDITIONS
IZ = 250 µA
MIN. TYP. MAX. UNIT
VZ
6.4
−
6.8
−
7.2
1.1
10
V
V
V
VF
forward voltage
IF = 100 mA
VZSM
IH
reverse surge voltage
input high current
tp = 1 ms; IZSM = 2.5 A
VIN = 5.25 V
−
−
−
−
0.5 µA
RZ
SZ
zener impedance
IZ = 250 µA
−
−
100
Ω
temperature coefficient of VZ
input diode capacitance
−
3
−
mV/K
CD
f = 1 MHz; VR = 0
−
−
200 pF
100 pF
f = 1 MHz; VR = 5.25 V
−
−
1997 Sep 08
3
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
10
2
IZSM
(A)
Ptot
(W)
1.5
1
0.5
0
1
0.1
1
10
0
50
100
150
200
tp (ms)
TS (°C)
All diodes loaded.
Fig.3 Maximum non-repetitive peak reverse
current as a function of the pulse time.
Fig.4 Power derating curve.
150
CD
(pF)
100
PZSM
(W)
100
10
50
0
1
0
1
2
3
4
5
6
0.1
1
10
VZ (V)
tp (ms)
PZSM = VZSM x IZSM
;
VZSM is the non-repetitive peak reverse voltage at IZSM
.
Tj = 25 °C; f = 1 MHz.
Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of the
pulse duration (square pulse).
Fig.6 Diode capacitance as a function of the
working voltage; typical values.
1997 Sep 08
4
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
GRAPHICAL DATA
IEC 1000-4-2 network
Note 1: attenuator is only used for open
socket high voltage measurements
C
Z = 150 pF; RZ = 330 Ω
Vertical Scale = 10 V/Div
Horizontal Scale = 50 ns/Div
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
output
GND
input
GND
GND
Unclamped +1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Clamped +1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Vertical Scale = 10 V/Div
Horizontal Scale = 50 ns/Div
GND
GND
input
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
GND
output
Unclamped -1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Clamped -1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Fig.7 ESD clamping test set-up and waveforms.
1997 Sep 08
5
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
TYPICAL COMMON ANODE APPLICATION
A nine-fold transient suppressor in a SOT339 package gives the possibility to protect nine separate lines using only one
package. Two simplified examples are illustrated below.
Fig.8 Computer interface protection.
Fig.9 Microprocessor protection.
1997 Sep 08
6
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
DEVICE PLACEMENT AND PRINTED-CIRCUIT BOARD LAYOUT
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA109TS is
determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further
add to the clamping voltage (V = L di/dt) the printed-circuit board layout should use minimal series conductor lengths.
This includes the lead length of the suppression element.
In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended:
1. Place the suppression element in the area of the input terminals or connectors.
2. Reduce parallel signal paths.
3. Avoid running protection conductors in parallel with unprotected conductors.
4. Minimize all printed-circuit board loop areas including power and ground loops.
5. Minimize the length of the transient return path to ground.
6. Avoid using shared transient return paths to a common ground point.
1997 Sep 08
7
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm
SOT339-1
D
E
A
X
c
H
v
M
A
y
E
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
1
2
3
p
E
p
max.
8o
0o
0.21
0.05
1.80
1.65
0.38
0.25
0.20
0.09
7.4
7.0
5.4
5.2
7.9
7.6
1.03
0.63
0.9
0.7
0.9
0.5
mm
2.0
0.65
0.25
1.25
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-09-08
95-02-04
SOT339-1
MO-150AE
1997 Sep 08
8
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 08
9
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
NOTES
1997 Sep 08
10
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
NOTES
1997 Sep 08
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
117027/00/01/pp12
Date of release: 1997 Sep 08
Document order number: 9397 750 02834
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