BZA408B [NXP]
Quadruple bidirectional ESD transient voltage suppressor; 四路双向ESD瞬态电压抑制器
| 型号： | BZA408B |
| 厂家： | 
NXP |
| 描述： | Quadruple bidirectional ESD transient voltage suppressor |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
book, halfpage
BZA408B
Quadruple bidirectional ESD
transient voltage suppressor
1998 Oct 15
Product specification
Supersedes data of 1998 Jun 05
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
FEATURES
PINNING
• ESD rating >15 kV, according to IEC1000-4-2
• SOT457 surface mount package
• Non-clamping range: −5 V to +5 V
• Channel separation: >70 dB
PIN
DESCRIPTION
1
2, 5
3
cathode 1
ground
cathode 2
cathode 3
cathode 4
• Low reverse current: <100 nA
4
• Low diode capacitance: <75 pF.
6
APPLICATIONS
• Protection of equipment, connected to data and
transmission lines, against voltage surges caused by
electrostatic discharge e.g:
6
5
4
handbook, halfpage
6
5
2
4
3
– Computers and peripherals
– Audio and video equipment
– Communication systems
– Medical equipment
1
1
2
3
Top view
MAM409
– Portable electronics.
Marking code: Z8.
DESCRIPTION
Fig.1 Simplified outline (SOT457) and symbol.
4-bit wide monolithic bidirectional ESD transient voltage
suppressor in a six lead SOT457 (SC-74) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
IZSM
PZSM
Tstg
Tj
non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2
−
−
2
A
non-repetitive peak power
storage temperature
junction temperature
tp = 1 ms; square pulse
20
W
−65
−65
+150
+150
°C
°C
1998 Oct 15
2
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
340
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
VRWM
VR
working reverse voltage
reverse voltage
−
5
V
V
V
Itest = 5 mA
5.5
−
−
VZSM
IR
non-repetitive peak reverse voltage tp = 1 ms; IZSM = 2 A
10
reverse current
VR = VRWM
−
100
nA
Cd
diode capacitance
see Fig.3
VR = 0; f = 1 MHz
VR = 5 V; f = 1 MHz
note 1; see Fig.4
−
75
55
−
pF
pF
dB
−
αch (p to p) pin to pin channel separation
70
Note
1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.
1998 Oct 15
3
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
GRAPHICAL DATA
MGR557
MGR558
10
80
handbook, halfpage
handbook, halfpage
C
d
(pF)
I
ZSM
(A)
60
1
40
−1
10
20
0
−2
−1
10
10
1
10
1
2
3
4
5
t
(ms)
p
V
(V)
R
Tj = 25 °C; f = 1 MHz.
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
SPECTRUM
coaxial cable with
SMB connector
ANALYZER
1 MΩ
SIGNAL
GENERATOR
SIGNAL
GENERATOR
DUT
600 Ω
600 Ω
1
2
3
6
f = 1 kHz
−7 dBs
f = 400 Hz
−7 dBs
5
4
MGR556
Fig.4 Channel separation measurement setup.
4
1998 Oct 15
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
ESD TESTER
RG 223/U
50 Ω coax
DIGITIZING
OSCILLOSCOPE
10×
R
Z
450 Ω
ATTENUATOR
note 1
C
Z
50 Ω
Note 1: attenuator is only used for open
socket high voltage measurements
IEC1000-4-2 network
C
= 150 pF; R = 330 Ω
Z
Z
1/4 BZA408B
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
GND
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC1000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC1000-4-2 network)
GND
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
unclamped −1 kV ESD voltage waveform
(IEC1000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC1000-4-2 network)
MGR560
Fig.5 ESD clamping test set-up and waveforms.
5
1998 Oct 15
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
APPLICATION INFORMATION
Typical bidirectional application
A quadruple bidirectional transient suppressor in a SOT457 package makes it possible to protect four separate lines
using only one package. One simplified example is shown in Fig.6.
audio in L
audio in R
audio out L
TVSET/VCR
audio out R
SCART
CONNECTOR
BZA408B
GND
MGR559
Fig.6 Scart connector protection.
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA408B is
determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further
add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a
minimum. This includes the lead length of the suppression element.
In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input terminals or connectors.
2. Keep parallel signal paths to a minimum.
3. Avoid running protection conductors in parallel with unprotected conductors.
4. Minimize all printed-circuit board loop areas including power and ground loops.
5. Minimize the length of the transient return path to ground.
6. Avoid using shared transient return paths to a common ground point.
1998 Oct 15
6
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
1
b
c
D
E
e
H
L
Q
v
w
y
p
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT457
SC-74
1998 Oct 15
7
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 15
8
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
NOTES
1998 Oct 15
9
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
NOTES
1998 Oct 15
10
Philips Semiconductors
Product specification
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
NOTES
1998 Oct 15
11
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115104/00/02/pp12
Date of release: 1998 Oct 15
Document order number: 9397 750 04313
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