BSP145 [NXP]
N-channel enhancement mode vertical D-MOS transistor; N沟道增强型垂直的D- MOS晶体管
| 型号： | BSP145 |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode vertical D-MOS transistor |
| 文件： | 总9页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP145
N-channel enhancement mode
vertical D-MOS transistor
1995 Apr 24
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High speed switching
d
4
handbook, halfpage
• No secondary breakdown.
APPLICATIONS
g
• Intended for applications in relay, high speed and line
transformer drivers.
1
2
3
s
DESCRIPTION
Top view
MAM054
N-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
Fig.1 Simplified outline and symbol.
PINNING - SOT223
PIN
SYMBOL
DESCRIPTION
gate
1
2
3
4
g
d
s
d
CAUTION
drain
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
source
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
450
UNIT
VDS
drain-source voltage
gate-source voltage
−
−
3
−
V
V
V
VGSO
VGSth
ID
open drain
±20
4
gate-source threshold voltage
drain current
ID = 1 mA; VDS = VGS
250
14
mA
Ω
RDSon
Ptot
drain-source on-state resistance
total power dissipation
ID = 100 mA; VGS = 10 V
10
up to Tamb = 25 °C
−
1.5
W
1995 Apr 24
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
ID
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
−
450
±20
250
1
V
gate-source voltage
drain current
open drain
−
V
−
mA
A
IDM
Ptot
Tstg
Tj
peak drain current
−
total power dissipation
storage temperature
operating junction temperature
up to Tamb = 25 °C; note 1
−
1.5
W
°C
°C
−65
−
+150
150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
83.3
UNIT
Rth j-a
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on an epoxy printed-circuit board, 40 × 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
CONDITIONS
VGS = 0; ID = 10 µA
MIN.
450
TYP. MAX. UNIT
V(BR)DSS
VGSth
IDSS
−
−
V
VDS = VGS; ID = 1 mA
2
3
4
V
VGS = 0; VDS = 350 V
−
−
1
µA
nA
Ω
IGSS
VDS = 0; VGS = ±20 V
−
−
±100
14
−
RDSon
yfs
drain-source on-state resistance
forward transfer admittance
input capacitance
VGS = 10 V; ID = 100 mA
VDS = 25 V; ID =250 mA
VGS = 0; VDS = 25 V; f = 1 MHz
VGS = 0; VDS = 25 V; f = 1 MHz
VGS = 0; VDS = 25 V; f = 1 MHz
−
10
−
200
−
mS
pF
pF
pF
Ciss
90
25
2
120
35
5
Coss
output capacitance
−
Crss
reverse transfer capacitance
−
Switching times (see Figs 2 and 3)
ton
turn-on time
VGS = 0 to 10 V; VDD = 200 V;
ID = 100 mA
−
−
−
−
10
ns
ns
toff
turn-off time
VGS = 10 to 0 V; VDD =200 V;
ID = 100 mA
100
1995 Apr 24
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
V
= 50 V
handbook, halfpage
handbook, halfpage
INPUT
DD
90 %
10 %
10 V
0 V
90 %
I
D
OUTPUT
50 Ω
10 %
MSA631
t
t
off
on
MBB692
Fig.2 Switching time test circuit.
Fig.3 Input and output waveforms.
MRC207
MGC433
1
2
handbook, halfpage
handbook, halfpage
P
(1)
t
=
p
tot
I
D
(W)
10 µs
100 µs
1 ms
(A)
1.5
1
10
10 ms
100 ms
1
t
p
P
=
δ
1 s
DC
2
T
10
0.5
t
t
p
T
3
0
0
10
2
3
50
100
150
1
10
10
10
V
(V)
T
(°C)
amb
DS
δ = 0.01.
Tamb = 25 °C.
(1) RDSon limitation.
Fig.4 Power derating curve.
Fig.5 DC SOAR.
1995 Apr 24
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
MGC431
MGC436
120
1
handbook, halfpage
handbook, halfpage
V
= 10 V
6 V
GS
I
D
(A)
C
(pF)
0.8
80
C
5 V
iss
0.6
0.4
0.2
4.5 V
4 V
40
C
oss
C
rss
0
0
0
0
10
20
30
4
8
12
16
(V)
V
(V)
DS
V
DS
VGS = 0.
Tj = 25 °C.
f = 1 MHz.
Tj = 25 °C.
Fig.6 Capacitance as a function of drain source
voltage; typical values.
Fig.7 Typical output characteristics.
MGC435
MGC438
30
1
handbook, halfpage
handbook, halfpage
R
I
DS
on
D
(A)
(Ω)
0.5
15
0
0
0
0
5
10
5
10
V
(V)
V
(V)
GS
GS
ID = 10 mA.
Tj = 25 °C.
VDS = 10 V.
Tj = 25 °C.
Fig.9 Drain-source on-state resistance as
a function of gate-source voltage;
typical values.
Fig.8 Typical transfer characteristics.
1995 Apr 24
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
MGC434
MGC437
1.2
60
handbook, halfpage
handbook, halfpage
V
= 4 V
4.5 V
5 V
R
GS
DS
k
on
(Ω)
1.0
40
6 V
0.8
20
10 V
0.6
50
0
10
3
2
1
10
10
1
50
150
o
I
(A)
D
T
( C)
j
VGSth at Tj
----------------------------------------
VGSth at 25 °C
k =
ID = 1 mA; VDS = VGS
.
Tj = 25 °C.
Fig.10 Drain-source on-state resistance as a
function of drain current; typical values.
Fig.11 Temperature coefficient of gate-source
threshold voltage.
MLC695
2.5
handbook, halfpage
k
2
1.5
1
0.5
0
−50
0
50
100
150
T (°C)
j
RDSon at Tj
k =
-----------------------------------------
RDSon at 25 °C
Fig.12 Temperature coefficient of drain-source
on-state resistance.
1995 Apr 24
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
MGC432
2
10
=
δ
0.75
R
th j-a
(K/W)
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
t
1
p
P
=
δ
T
t
t
p
T
0
1
10
6
5
4
3
2
1
3
2
10
10
10
10
10
10
1
10
10
10
t
(s)
p
Tamb = 25 °C.
Fig.13 Thermal resistance from junction to ambient as a function of pulse time; typical values.
1995 Apr 24
7
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
PACKAGE OUTLINE
0.95
0.85
a
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.14 SOT223.
1995 Apr 24
8
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP145
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 24
9
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