BSP149H6327XTSA1 [INFINEON]
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4;
| 型号： | BSP149H6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP149
SIPMOS® Small-Signal-Transistor
Product Summary
VDS
Features
200
V
Ω
A
• N-channel
• Depletion mode
RDS(on),max
IDSS,min
3.5
0.14
• dv /dt rated
• Available with V GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
PG-SOT223
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel Information
Marking
Packaging
BSP149
PG-SOT223
H6327: 1000 pcs/reel
BSP149
Non dry
BSP149
PG-SOT223
H6906: 1000 pcs/reel
BSP149
Non dry
sorted in VGS(th) bands1)
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
Continuous drain current
0.66
0.53
2.6
A
I D,pulse
dv /dt
V GS
T A=25 °C
I D=0.66 A,
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
V
DS=160 V,
di /dt =200 A/µs,
j,max=150 °C
6
kV/µs
V
T
±20
ESD Class
(JESD22-A114-HBM)
1B (>500,<600)
P tot
T A=25 °C
Power dissipation
1.8
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
1) see table on next page and diagram 11
Rev. 2.1
page 1
2012-11-28
BSP149
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
R thJS
-
-
25
K/W
R thJA
SMD version, device on PCB
minimal footprint
-
-
-
-
115
70
6 cm2 cooling area1)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=-3 V, I D=250 µA
V GS(th) V DS=3 V, I D=400 µA
Drain-source breakdown voltage
Gate threshold voltage
200
-2.1
-
-
V
-1.4
-1
V DS=200 V,
I D(off)
Drain-source cutoff current
-
-
-
-
0.1
5
µA
V
GS=-3 V, T j=25 °C
V
V
DS=200 V,
GS=-3 V, T j=125 °C
I GSS
I DSS
V GS=20 V, V DS=0 V
V GS=0 V, V DS=10 V
Gate-source leakage current
On-state drain current
-
-
10
-
nA
mA
Ω
140
-
R DS(on) V GS=0 V, I D=70 mA
GS=10 V, I D=660 mA
Drain-source on-state resistance
-
-
1.7
1.0
3.5
1.8
V
|V DS|>2|I D|R DS(on)max
I D=0.48 A
,
g fs
Transconductance
0.4
0.8
-
S
V
Threshold voltage V GS(th) sorted in bands3)
V GS(th) V DS=3 V, I D=400 µA
J
-1.2
-1.35
-1.5
-
-
-
-
-
-1
K
L
-1.15
-1.3
M
N
-1.65
-1.8
-1.45
-1.6
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 2.1
page 2
2012-11-28
BSP149
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
326
41
430 pF
V GS=-3 V, V DS=25 V,
f =1 MHz
C oss
Crss
t d(on)
t r
55
25
17
5.1
3.4
45
7.7
5.1
68
ns
V
V
DD=100 V,
GS=-2…7 V,
t d(off)
t f
Turn-off delay time
Fall time
I D=0.50 A, R G=6 Ω
21
31
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.74
5.6
1.0
8.4
14
-
nC
V DD=160 V,
I D=0.05 A,
Q gd
Q g
11
V
GS=-3 to 5 V
V plateau
Gate plateau voltage
0.16
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.66
2.6
T A=25 °C
I S,pulse
V GS=-3 V, I F=0.66 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
V
t rr
Reverse recovery time
-
-
42
60
65
90
ns
V R=100 V, I F=0.5 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
Rev. 2.1
page 3
2012-11-28
BSP149
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
2
1.5
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.5
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
101
102
limited by on-state
resistance
10 µs
100 µs
1 ms
0.5
100
10-1
10-2
10-3
10 ms
0.2
101
0.1
DC
0.05
single pulse
0.02
0.01
100
100
101
102
103
10-4
10-3
10-2
10-1
100
101
102
VDS [V]
tp [s]
Rev. 2.1
page 4
2012-11-28
BSP149
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
10 V
1 V
1
6
-0.2 V
0.5 V
0 V
0.2 V
0.5 V
-0.1 V
0.1 V
5
4
3
2
1
0
0.8
0.6
0.4
0.2
0
0.2 V
0.1 V
0 V
-0.1 V
-0.2 V
1 V
10 V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
VDS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
2
1.6
1.2
0.8
0.4
0
1.2
1
0.8
0.6
0.4
0.2
0
-2
-1
0
1
2
3
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70
VGS [V]
ID [A]
Rev. 2.1
page 5
2012-11-28
BSP149
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=3 V; I D=400 µA
parameter: I D
R DS(on)=f(T j); I D=0.07 A; V GS=0 V
8
6
0
-0.5
98 %
-1
typ
98 %
4
-1.5
-2
2 %
2
typ
-2.5
-3
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Threshold voltage bands
12 Typ. capacitances
I D=f(V GS); V DS=3 V; T j=25 °C
C =f(V DS); V GS=-3 V; f =1 MHz
10
1000
Ciss
N
L
M
K
J
1
400 µA
100
Coss
Crss
0.1
0.01
10
-2
-1.5
VGS [V]
-1
-0.5
0
10
20
30
VDS [V]
Rev. 2.1
page 6
2012-11-28
BSP149
13 Forward characteristics of reverse diode
I F=f(V SD
15 Typ. gate charge
V GS=f(Q gate); I D=0.5 A pulsed
parameter: V DD
)
parameter: T j
5
4
10
0.5 VDS(max)
0.2 VDS(max)
150 °C
25 °C
3
2
0.8 VDS(max)
0.12 A 1
150 °C,
98%
1
0
25 °C, 98%
-1
-2
-3
-4
0.1
0.01
0
0
2
4
6
8
10
12
0.5
1
1.5
2
25 °C, 98%
VSD [V]
Qgate [nC]
16 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
240
200
160
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.1
page 7
2012-11-28
BSP149
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 2.1
page 8
2012-11-28
BSP149
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2012-11-28
相关型号：
BSP149H6906
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
BSP149L6327
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
BSP149L6906
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
BSP15
Power Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO
BSP152-T
TRANSISTOR 0.55 A, 200 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
BSP152-TAPE-13
TRANSISTOR 0.55 A, 200 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明